DE69313573T2 - Verfahren zur Herstellung eines GaP lichtemittierenden Elementes - Google Patents

Verfahren zur Herstellung eines GaP lichtemittierenden Elementes

Info

Publication number
DE69313573T2
DE69313573T2 DE69313573T DE69313573T DE69313573T2 DE 69313573 T2 DE69313573 T2 DE 69313573T2 DE 69313573 T DE69313573 T DE 69313573T DE 69313573 T DE69313573 T DE 69313573T DE 69313573 T2 DE69313573 T2 DE 69313573T2
Authority
DE
Germany
Prior art keywords
producing
emitting element
gap light
gap
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69313573T
Other languages
English (en)
Other versions
DE69313573D1 (de
Inventor
Toshio Ootaki
Akio Nakamura
Yuuki Tamura
Munehisa Yanagisawa
Susumu Higuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Handotai Co Ltd
Original Assignee
Shin Etsu Handotai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Handotai Co Ltd
Publication of DE69313573D1 publication Critical patent/DE69313573D1/de
Application granted granted Critical
Publication of DE69313573T2 publication Critical patent/DE69313573T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/305—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table characterised by the doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/025—Physical imperfections, e.g. particular concentration or distribution of impurities
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/955—Melt-back

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
DE69313573T 1992-09-30 1993-09-29 Verfahren zur Herstellung eines GaP lichtemittierenden Elementes Expired - Fee Related DE69313573T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP28526592A JP2719870B2 (ja) 1992-09-30 1992-09-30 ＧａＰ系発光素子基板及びその製造方法

Publications (2)

Publication Number Publication Date
DE69313573D1 DE69313573D1 (de) 1997-10-09
DE69313573T2 true DE69313573T2 (de) 1998-03-26

Family

ID=17689269

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69313573T Expired - Fee Related DE69313573T2 (de) 1992-09-30 1993-09-29 Verfahren zur Herstellung eines GaP lichtemittierenden Elementes

Country Status (4)

Country Link
US (1) US5643827A (de)
EP (1) EP0590649B1 (de)
JP (1) JP2719870B2 (de)
DE (1) DE69313573T2 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2817577B2 (ja) * 1993-05-31 1998-10-30 信越半導体株式会社 ＧａＰ純緑色発光素子基板
DE19549588C2 (de) * 1995-03-17 2002-12-19 Showa Denko Kk Verfahren zu Herstellung einer Epitaxialstruktur für eine lichtemittierende GaP-Diode
JP3624451B2 (ja) * 1995-03-17 2005-03-02 昭和電工株式会社 発光素子用ＧａＰエピタキシャル基板
JP3356041B2 (ja) * 1997-02-17 2002-12-09 昭和電工株式会社 リン化ガリウム緑色発光素子
EP1156534A4 (de) * 1999-10-29 2006-09-06 Shinetsu Handotai Kk Galiumphosphid-lumineszensbauelement
JP7351241B2 (ja) * 2020-03-02 2023-09-27 信越半導体株式会社 化合物半導体エピタキシャルウェーハ及びその製造方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3189494A (en) * 1963-08-22 1965-06-15 Texas Instruments Inc Epitaxial crystal growth onto a stabilizing layer which prevents diffusion from the substrate
US3872314A (en) * 1973-01-18 1975-03-18 Ferranti Ltd Electroluminescent devices and apparatus including such devices
US3931631A (en) * 1973-07-23 1976-01-06 Monsanto Company Gallium phosphide light-emitting diodes
US4101920A (en) * 1975-01-29 1978-07-18 Sony Corporation Green light emitting diode
DE2843983C2 (de) * 1977-10-07 1983-09-15 Tokyo Shibaura Denki K.K., Kawasaki, Kanagawa Verfahren zum Herstellen einer Grünlicht emittierenden GaP-Lumineszenzdiode
JPS5831739B2 (ja) * 1978-04-07 1983-07-08 株式会社東芝 燐化ガリウム緑色発光素子の製造方法
JPS5694678A (en) * 1979-12-27 1981-07-31 Sanyo Electric Co Ltd Manufacture of lightemitting diode
FR2631621B1 (fr) * 1988-05-19 1990-09-07 Inst Francais Du Petrole Nouvelles zeolithes de type structural ton, leur preparation et leur utilisation

Also Published As

Publication number Publication date
JPH06120561A (ja) 1994-04-28
EP0590649B1 (de) 1997-09-03
US5643827A (en) 1997-07-01
EP0590649A1 (de) 1994-04-06
DE69313573D1 (de) 1997-10-09
JP2719870B2 (ja) 1998-02-25

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee