DE2555437C2 - Leseverstärker - Google Patents
LeseverstärkerInfo
- Publication number
- DE2555437C2 DE2555437C2 DE2555437A DE2555437A DE2555437C2 DE 2555437 C2 DE2555437 C2 DE 2555437C2 DE 2555437 A DE2555437 A DE 2555437A DE 2555437 A DE2555437 A DE 2555437A DE 2555437 C2 DE2555437 C2 DE 2555437C2
- Authority
- DE
- Germany
- Prior art keywords
- transistor
- inputs
- sense amplifier
- amplifier
- potential
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000005669 field effect Effects 0.000 claims description 4
- 238000000034 method Methods 0.000 description 11
- 230000008569 process Effects 0.000 description 9
- 230000004044 response Effects 0.000 description 4
- 230000035945 sensitivity Effects 0.000 description 4
- 241001191009 Gymnomyza Species 0.000 description 3
- HLXGRHNZZSMNRX-UHFFFAOYSA-M sodium;3-(n-ethyl-3,5-dimethylanilino)-2-hydroxypropane-1-sulfonate Chemical compound [Na+].[O-]S(=O)(=O)CC(O)CN(CC)C1=CC(C)=CC(C)=C1 HLXGRHNZZSMNRX-UHFFFAOYSA-M 0.000 description 3
- 238000013459 approach Methods 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005070 sampling Methods 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000036039 immunity Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/26—Sensing or reading circuits; Data output circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Static Random-Access Memory (AREA)
- Read Only Memory (AREA)
- Dram (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US05/579,354 US3992637A (en) | 1975-05-21 | 1975-05-21 | Unclocked sense ampllifier |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE2555437A1 DE2555437A1 (de) | 1976-12-09 |
| DE2555437C2 true DE2555437C2 (de) | 1982-04-15 |
Family
ID=24316559
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE2555437A Expired DE2555437C2 (de) | 1975-05-21 | 1975-12-10 | Leseverstärker |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US3992637A (OSRAM) |
| JP (1) | JPS51142923A (OSRAM) |
| DE (1) | DE2555437C2 (OSRAM) |
| GB (1) | GB1491845A (OSRAM) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4508980A (en) * | 1976-11-11 | 1985-04-02 | Signetics Corporation | Sense and refresh amplifier circuit |
| US4412143A (en) * | 1981-03-26 | 1983-10-25 | Ncr Corporation | MOS Sense amplifier |
| TW432545B (en) | 1998-08-07 | 2001-05-01 | Ibm | Method and improved SOI body contact structure for transistors |
| US6154091A (en) * | 1999-06-02 | 2000-11-28 | International Business Machines Corporation | SOI sense amplifier with body contact structure |
| US7333379B2 (en) * | 2006-01-12 | 2008-02-19 | International Business Machines Corporation | Balanced sense amplifier circuits with adjustable transistor body bias |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3678473A (en) * | 1970-06-04 | 1972-07-18 | Shell Oil Co | Read-write circuit for capacitive memory arrays |
| BE789500A (fr) * | 1971-09-30 | 1973-03-29 | Siemens Ag | Memoire a semiconducteurs avec elements de memorisation a un seul transistor |
| DE2309192C3 (de) * | 1973-02-23 | 1975-08-14 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Regenerierschaltung nach Art eines getasteten Flipflops und Verfahren zum Betrieb einer solchen Regenerierschaltung |
| US3838404A (en) * | 1973-05-17 | 1974-09-24 | Teletype Corp | Random access memory system and cell |
| US3858060A (en) * | 1973-06-07 | 1974-12-31 | Ibm | Integrated driver circuit |
| US3882326A (en) * | 1973-12-26 | 1975-05-06 | Ibm | Differential amplifier for sensing small signals |
-
1975
- 1975-05-21 US US05/579,354 patent/US3992637A/en not_active Expired - Lifetime
- 1975-12-10 DE DE2555437A patent/DE2555437C2/de not_active Expired
-
1976
- 1976-03-31 GB GB12972/76A patent/GB1491845A/en not_active Expired
- 1976-04-30 JP JP51048710A patent/JPS51142923A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| GB1491845A (en) | 1977-11-16 |
| JPS51142923A (en) | 1976-12-08 |
| US3992637A (en) | 1976-11-16 |
| DE2555437A1 (de) | 1976-12-09 |
| JPS5752667B2 (OSRAM) | 1982-11-09 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OD | Request for examination | ||
| D2 | Grant after examination | ||
| 8339 | Ceased/non-payment of the annual fee |