JPS51142923A - Sensitive amplifier - Google Patents

Sensitive amplifier

Info

Publication number
JPS51142923A
JPS51142923A JP51048710A JP4871076A JPS51142923A JP S51142923 A JPS51142923 A JP S51142923A JP 51048710 A JP51048710 A JP 51048710A JP 4871076 A JP4871076 A JP 4871076A JP S51142923 A JPS51142923 A JP S51142923A
Authority
JP
Japan
Prior art keywords
sensitive amplifier
amplifier
sensitive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP51048710A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5752667B2 (OSRAM
Inventor
Emu Kiyasudei Buruusu
Esu Hotsukudei Reimondo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of JPS51142923A publication Critical patent/JPS51142923A/ja
Publication of JPS5752667B2 publication Critical patent/JPS5752667B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C16/00Erasable programmable read-only memories
    • G11C16/02Erasable programmable read-only memories electrically programmable
    • G11C16/06Auxiliary circuits, e.g. for writing into memory
    • G11C16/26Sensing or reading circuits; Data output circuits
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C16/00Erasable programmable read-only memories
    • G11C16/02Erasable programmable read-only memories electrically programmable
    • G11C16/04Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0466Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Static Random-Access Memory (AREA)
  • Read Only Memory (AREA)
  • Dram (AREA)
JP51048710A 1975-05-21 1976-04-30 Sensitive amplifier Granted JPS51142923A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/579,354 US3992637A (en) 1975-05-21 1975-05-21 Unclocked sense ampllifier

Publications (2)

Publication Number Publication Date
JPS51142923A true JPS51142923A (en) 1976-12-08
JPS5752667B2 JPS5752667B2 (OSRAM) 1982-11-09

Family

ID=24316559

Family Applications (1)

Application Number Title Priority Date Filing Date
JP51048710A Granted JPS51142923A (en) 1975-05-21 1976-04-30 Sensitive amplifier

Country Status (4)

Country Link
US (1) US3992637A (OSRAM)
JP (1) JPS51142923A (OSRAM)
DE (1) DE2555437C2 (OSRAM)
GB (1) GB1491845A (OSRAM)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4508980A (en) * 1976-11-11 1985-04-02 Signetics Corporation Sense and refresh amplifier circuit
US4412143A (en) * 1981-03-26 1983-10-25 Ncr Corporation MOS Sense amplifier
TW432545B (en) 1998-08-07 2001-05-01 Ibm Method and improved SOI body contact structure for transistors
US6154091A (en) * 1999-06-02 2000-11-28 International Business Machines Corporation SOI sense amplifier with body contact structure
US7333379B2 (en) * 2006-01-12 2008-02-19 International Business Machines Corporation Balanced sense amplifier circuits with adjustable transistor body bias

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3678473A (en) * 1970-06-04 1972-07-18 Shell Oil Co Read-write circuit for capacitive memory arrays
BE789500A (fr) * 1971-09-30 1973-03-29 Siemens Ag Memoire a semiconducteurs avec elements de memorisation a un seul transistor
DE2309192C3 (de) * 1973-02-23 1975-08-14 Siemens Ag, 1000 Berlin Und 8000 Muenchen Regenerierschaltung nach Art eines getasteten Flipflops und Verfahren zum Betrieb einer solchen Regenerierschaltung
US3838404A (en) * 1973-05-17 1974-09-24 Teletype Corp Random access memory system and cell
US3858060A (en) * 1973-06-07 1974-12-31 Ibm Integrated driver circuit
US3882326A (en) * 1973-12-26 1975-05-06 Ibm Differential amplifier for sensing small signals

Also Published As

Publication number Publication date
DE2555437C2 (de) 1982-04-15
GB1491845A (en) 1977-11-16
US3992637A (en) 1976-11-16
DE2555437A1 (de) 1976-12-09
JPS5752667B2 (OSRAM) 1982-11-09

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