DE2546697A1 - Verfahren zum elektrochemischen abscheiden eines materials auf einem halbleiterkoerper - Google Patents

Verfahren zum elektrochemischen abscheiden eines materials auf einem halbleiterkoerper

Info

Publication number
DE2546697A1
DE2546697A1 DE19752546697 DE2546697A DE2546697A1 DE 2546697 A1 DE2546697 A1 DE 2546697A1 DE 19752546697 DE19752546697 DE 19752546697 DE 2546697 A DE2546697 A DE 2546697A DE 2546697 A1 DE2546697 A1 DE 2546697A1
Authority
DE
Germany
Prior art keywords
semiconductor body
gallium arsenide
semiconductor
metal
ions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE19752546697
Other languages
German (de)
English (en)
Inventor
Norman Rain
Arthur Basil Joseph Sullivan
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NAT RES DEV
Original Assignee
NAT RES DEV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from GB4508174A external-priority patent/GB1465567A/en
Application filed by NAT RES DEV filed Critical NAT RES DEV
Publication of DE2546697A1 publication Critical patent/DE2546697A1/de
Withdrawn legal-status Critical Current

Links

Classifications

    • H10P50/617—
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • H10P14/47—
    • H10P32/16—
    • H10P34/422—
    • H10P52/00—
    • H10P95/00—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/143—Electron beam

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Led Devices (AREA)
DE19752546697 1974-10-17 1975-10-17 Verfahren zum elektrochemischen abscheiden eines materials auf einem halbleiterkoerper Withdrawn DE2546697A1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB4508174A GB1465567A (en) 1974-10-17 1974-10-17 Deposition of materials onto semiconductors
GB3673175 1975-09-05

Publications (1)

Publication Number Publication Date
DE2546697A1 true DE2546697A1 (de) 1976-04-29

Family

ID=26263225

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19752546697 Withdrawn DE2546697A1 (de) 1974-10-17 1975-10-17 Verfahren zum elektrochemischen abscheiden eines materials auf einem halbleiterkoerper

Country Status (6)

Country Link
US (1) US4024029A (cg-RX-API-DMAC10.html)
JP (1) JPS5191664A (cg-RX-API-DMAC10.html)
CA (1) CA1047654A (cg-RX-API-DMAC10.html)
DE (1) DE2546697A1 (cg-RX-API-DMAC10.html)
FR (1) FR2288389A1 (cg-RX-API-DMAC10.html)
NL (1) NL7512238A (cg-RX-API-DMAC10.html)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4147564A (en) * 1977-11-18 1979-04-03 Sri International Method of controlled surface texturization of crystalline semiconductor material
US4144139A (en) * 1977-11-30 1979-03-13 Solarex Corporation Method of plating by means of light
DE2755418A1 (de) * 1977-12-13 1979-06-21 Bosch Gmbh Robert Verfahren zur herstellung eines halbleiter-bauelements
US4217183A (en) * 1979-05-08 1980-08-12 International Business Machines Corporation Method for locally enhancing electroplating rates
US4379022A (en) * 1979-05-08 1983-04-05 International Business Machines Corporation Method for maskless chemical machining
JPS575383A (en) * 1980-06-13 1982-01-12 Fujitsu Ltd Manufacture of semiconductor device
US4507181A (en) * 1984-02-17 1985-03-26 Energy Conversion Devices, Inc. Method of electro-coating a semiconductor device
GB2188774B (en) * 1986-04-02 1990-10-31 Westinghouse Electric Corp Method of forming a conductive pattern on a semiconductor surface
US5171608A (en) * 1990-09-28 1992-12-15 The Unites States Of America As Represented By The Secretary Of The Navy Method of pattern transfer in photolithography using laser induced metallization
US5882435A (en) * 1993-09-30 1999-03-16 Siemens Solar Gmbh Process for the metal coating of solar cells made of crystalline silicon
US6902659B2 (en) * 1998-12-01 2005-06-07 Asm Nutool, Inc. Method and apparatus for electro-chemical mechanical deposition
US6413388B1 (en) * 2000-02-23 2002-07-02 Nutool Inc. Pad designs and structures for a versatile materials processing apparatus
US6534116B2 (en) * 2000-08-10 2003-03-18 Nutool, Inc. Plating method and apparatus that creates a differential between additive disposed on a top surface and a cavity surface of a workpiece using an external influence
EP1063696B1 (en) * 1999-06-22 2007-08-22 Interuniversitair Micro-Elektronica Centrum Vzw A method for improving the quality of a metal-containing layer deposited from a plating bath
US6355153B1 (en) * 1999-09-17 2002-03-12 Nutool, Inc. Chip interconnect and packaging deposition methods and structures
US6921551B2 (en) * 2000-08-10 2005-07-26 Asm Nutool, Inc. Plating method and apparatus for controlling deposition on predetermined portions of a workpiece
US20040170753A1 (en) * 2000-12-18 2004-09-02 Basol Bulent M. Electrochemical mechanical processing using low temperature process environment
US7172497B2 (en) * 2001-01-05 2007-02-06 Asm Nutool, Inc. Fabrication of semiconductor interconnect structures
US7250104B2 (en) * 2003-08-08 2007-07-31 Novellus Systems, Inc. Method and system for optically enhanced metal planarization
US20050230262A1 (en) * 2004-04-20 2005-10-20 Semitool, Inc. Electrochemical methods for the formation of protective features on metallized features
US20060183321A1 (en) * 2004-09-27 2006-08-17 Basol Bulent M Method for reduction of gap fill defects
US8500985B2 (en) * 2006-07-21 2013-08-06 Novellus Systems, Inc. Photoresist-free metal deposition
US7732329B2 (en) * 2006-08-30 2010-06-08 Ipgrip, Llc Method and apparatus for workpiece surface modification for selective material deposition
US20080237048A1 (en) * 2007-03-30 2008-10-02 Ismail Emesh Method and apparatus for selective electrofilling of through-wafer vias
US20080277285A1 (en) * 2007-05-08 2008-11-13 Interuniversitair Microelektronica Centrum Vzw (Imec) Bipolar electroless processing methods

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1295071A (fr) 1960-07-05 1962-06-01 Siemens Ag Procédé pour déposer par électrolyse des couches minces sur des supports
US3294583A (en) * 1962-06-14 1966-12-27 Sprague Electric Co Process of coating a silicon semiconductor with indium using an ion beam
USB436421I5 (cg-RX-API-DMAC10.html) * 1965-01-27
US3458368A (en) * 1966-05-23 1969-07-29 Texas Instruments Inc Integrated circuits and fabrication thereof
US3529961A (en) * 1966-12-27 1970-09-22 Gen Electric Formation of thin films of gold,nickel or copper by photolytic deposition
US3506545A (en) * 1967-02-14 1970-04-14 Ibm Method for plating conductive patterns with high resolution
US3516855A (en) * 1967-05-29 1970-06-23 Ibm Method of depositing conductive ions by utilizing electron beam
US3551213A (en) * 1968-09-04 1970-12-29 Bell Telephone Labor Inc Geometrically selective ion bombardment by means of the photoelectric effect

Also Published As

Publication number Publication date
NL7512238A (nl) 1976-04-21
JPS5191664A (cg-RX-API-DMAC10.html) 1976-08-11
FR2288389A1 (fr) 1976-05-14
CA1047654A (en) 1979-01-30
US4024029A (en) 1977-05-17
FR2288389B1 (cg-RX-API-DMAC10.html) 1982-04-23

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Legal Events

Date Code Title Description
8141 Disposal/no request for examination