FR2288389A1 - Procede d'electrodeposition de metaux sur des substrats semi-conducteurs - Google Patents
Procede d'electrodeposition de metaux sur des substrats semi-conducteursInfo
- Publication number
- FR2288389A1 FR2288389A1 FR7531722A FR7531722A FR2288389A1 FR 2288389 A1 FR2288389 A1 FR 2288389A1 FR 7531722 A FR7531722 A FR 7531722A FR 7531722 A FR7531722 A FR 7531722A FR 2288389 A1 FR2288389 A1 FR 2288389A1
- Authority
- FR
- France
- Prior art keywords
- semiconductor substrates
- electrodeposition process
- metal electrodeposition
- metal
- substrates
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004070 electrodeposition Methods 0.000 title 1
- 239000002184 metal Substances 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 239000000758 substrate Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3063—Electrolytic etching
- H01L21/30635—Electrolytic etching of AIIIBV compounds
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/12—Semiconductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/228—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a liquid phase, e.g. alloy diffusion processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
- H01L21/2686—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation using incoherent radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
- H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
- H01L21/3043—Making grooves, e.g. cutting
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/143—Electron beam
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- High Energy & Nuclear Physics (AREA)
- Chemical & Material Sciences (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Electrochemistry (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Electroplating Methods And Accessories (AREA)
- Electrodes Of Semiconductors (AREA)
- Led Devices (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB4508174A GB1465567A (en) | 1974-10-17 | 1974-10-17 | Deposition of materials onto semiconductors |
GB3673175 | 1975-09-05 |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2288389A1 true FR2288389A1 (fr) | 1976-05-14 |
FR2288389B1 FR2288389B1 (fr) | 1982-04-23 |
Family
ID=26263225
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7531722A Granted FR2288389A1 (fr) | 1974-10-17 | 1975-10-16 | Procede d'electrodeposition de metaux sur des substrats semi-conducteurs |
Country Status (6)
Country | Link |
---|---|
US (1) | US4024029A (fr) |
JP (1) | JPS5191664A (fr) |
CA (1) | CA1047654A (fr) |
DE (1) | DE2546697A1 (fr) |
FR (1) | FR2288389A1 (fr) |
NL (1) | NL7512238A (fr) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2409597A1 (fr) * | 1977-11-18 | 1979-06-15 | Stanford Res Inst Int | Procede de formation d'une texture superficielle dans une matiere semiconductrice |
FR2412163A1 (fr) * | 1977-12-13 | 1979-07-13 | Bosch Gmbh Robert | Procede pour la fabrication d'un composant semi-conducteur |
FR2596921A1 (fr) * | 1986-04-02 | 1987-10-09 | Westinghouse Electric Corp | Procede de formation d'un dessin conducteur sur la surface d'un semi-conducteur tel que notamment du silicium, germanium et l'arsenium de gallium |
Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4144139A (en) * | 1977-11-30 | 1979-03-13 | Solarex Corporation | Method of plating by means of light |
US4379022A (en) * | 1979-05-08 | 1983-04-05 | International Business Machines Corporation | Method for maskless chemical machining |
US4217183A (en) * | 1979-05-08 | 1980-08-12 | International Business Machines Corporation | Method for locally enhancing electroplating rates |
JPS575383A (en) * | 1980-06-13 | 1982-01-12 | Fujitsu Ltd | Manufacture of semiconductor device |
US4507181A (en) * | 1984-02-17 | 1985-03-26 | Energy Conversion Devices, Inc. | Method of electro-coating a semiconductor device |
US5171608A (en) * | 1990-09-28 | 1992-12-15 | The Unites States Of America As Represented By The Secretary Of The Navy | Method of pattern transfer in photolithography using laser induced metallization |
US5882435A (en) * | 1993-09-30 | 1999-03-16 | Siemens Solar Gmbh | Process for the metal coating of solar cells made of crystalline silicon |
US6413388B1 (en) * | 2000-02-23 | 2002-07-02 | Nutool Inc. | Pad designs and structures for a versatile materials processing apparatus |
US6534116B2 (en) * | 2000-08-10 | 2003-03-18 | Nutool, Inc. | Plating method and apparatus that creates a differential between additive disposed on a top surface and a cavity surface of a workpiece using an external influence |
US6902659B2 (en) * | 1998-12-01 | 2005-06-07 | Asm Nutool, Inc. | Method and apparatus for electro-chemical mechanical deposition |
EP1063696B1 (fr) * | 1999-06-22 | 2007-08-22 | Interuniversitair Micro-Elektronica Centrum Vzw | Procédé d'amélioration de la qualité d'une couche déposée contenant du métal à partir d'un bain de métallisation |
US6355153B1 (en) * | 1999-09-17 | 2002-03-12 | Nutool, Inc. | Chip interconnect and packaging deposition methods and structures |
US6921551B2 (en) * | 2000-08-10 | 2005-07-26 | Asm Nutool, Inc. | Plating method and apparatus for controlling deposition on predetermined portions of a workpiece |
US20040170753A1 (en) * | 2000-12-18 | 2004-09-02 | Basol Bulent M. | Electrochemical mechanical processing using low temperature process environment |
US7172497B2 (en) * | 2001-01-05 | 2007-02-06 | Asm Nutool, Inc. | Fabrication of semiconductor interconnect structures |
US7250104B2 (en) * | 2003-08-08 | 2007-07-31 | Novellus Systems, Inc. | Method and system for optically enhanced metal planarization |
US20050230262A1 (en) * | 2004-04-20 | 2005-10-20 | Semitool, Inc. | Electrochemical methods for the formation of protective features on metallized features |
US20060183321A1 (en) * | 2004-09-27 | 2006-08-17 | Basol Bulent M | Method for reduction of gap fill defects |
US8500985B2 (en) * | 2006-07-21 | 2013-08-06 | Novellus Systems, Inc. | Photoresist-free metal deposition |
US7732329B2 (en) * | 2006-08-30 | 2010-06-08 | Ipgrip, Llc | Method and apparatus for workpiece surface modification for selective material deposition |
US20080237048A1 (en) * | 2007-03-30 | 2008-10-02 | Ismail Emesh | Method and apparatus for selective electrofilling of through-wafer vias |
US20080277285A1 (en) * | 2007-05-08 | 2008-11-13 | Interuniversitair Microelektronica Centrum Vzw (Imec) | Bipolar electroless processing methods |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR1295071A (fr) | 1960-07-05 | 1962-06-01 | Siemens Ag | Procédé pour déposer par électrolyse des couches minces sur des supports |
US3294583A (en) * | 1962-06-14 | 1966-12-27 | Sprague Electric Co | Process of coating a silicon semiconductor with indium using an ion beam |
USB436421I5 (fr) * | 1965-01-27 | |||
US3458368A (en) * | 1966-05-23 | 1969-07-29 | Texas Instruments Inc | Integrated circuits and fabrication thereof |
US3529961A (en) * | 1966-12-27 | 1970-09-22 | Gen Electric | Formation of thin films of gold,nickel or copper by photolytic deposition |
US3506545A (en) * | 1967-02-14 | 1970-04-14 | Ibm | Method for plating conductive patterns with high resolution |
US3516855A (en) * | 1967-05-29 | 1970-06-23 | Ibm | Method of depositing conductive ions by utilizing electron beam |
US3551213A (en) * | 1968-09-04 | 1970-12-29 | Bell Telephone Labor Inc | Geometrically selective ion bombardment by means of the photoelectric effect |
-
1975
- 1975-10-16 US US05/623,079 patent/US4024029A/en not_active Expired - Lifetime
- 1975-10-16 CA CA237,781A patent/CA1047654A/fr not_active Expired
- 1975-10-16 FR FR7531722A patent/FR2288389A1/fr active Granted
- 1975-10-17 JP JP12447575A patent/JPS5191664A/ja active Pending
- 1975-10-17 DE DE19752546697 patent/DE2546697A1/de not_active Withdrawn
- 1975-10-17 NL NL7512238A patent/NL7512238A/xx not_active Application Discontinuation
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2409597A1 (fr) * | 1977-11-18 | 1979-06-15 | Stanford Res Inst Int | Procede de formation d'une texture superficielle dans une matiere semiconductrice |
FR2412163A1 (fr) * | 1977-12-13 | 1979-07-13 | Bosch Gmbh Robert | Procede pour la fabrication d'un composant semi-conducteur |
FR2596921A1 (fr) * | 1986-04-02 | 1987-10-09 | Westinghouse Electric Corp | Procede de formation d'un dessin conducteur sur la surface d'un semi-conducteur tel que notamment du silicium, germanium et l'arsenium de gallium |
Also Published As
Publication number | Publication date |
---|---|
NL7512238A (nl) | 1976-04-21 |
DE2546697A1 (de) | 1976-04-29 |
US4024029A (en) | 1977-05-17 |
CA1047654A (fr) | 1979-01-30 |
JPS5191664A (fr) | 1976-08-11 |
FR2288389B1 (fr) | 1982-04-23 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |