FR2288389A1 - Procede d'electrodeposition de metaux sur des substrats semi-conducteurs - Google Patents

Procede d'electrodeposition de metaux sur des substrats semi-conducteurs

Info

Publication number
FR2288389A1
FR2288389A1 FR7531722A FR7531722A FR2288389A1 FR 2288389 A1 FR2288389 A1 FR 2288389A1 FR 7531722 A FR7531722 A FR 7531722A FR 7531722 A FR7531722 A FR 7531722A FR 2288389 A1 FR2288389 A1 FR 2288389A1
Authority
FR
France
Prior art keywords
semiconductor substrates
electrodeposition process
metal electrodeposition
metal
substrates
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7531722A
Other languages
English (en)
Other versions
FR2288389B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Research Development Corp UK
Original Assignee
National Research Development Corp UK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from GB4508174A external-priority patent/GB1465567A/en
Application filed by National Research Development Corp UK filed Critical National Research Development Corp UK
Publication of FR2288389A1 publication Critical patent/FR2288389A1/fr
Application granted granted Critical
Publication of FR2288389B1 publication Critical patent/FR2288389B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3063—Electrolytic etching
    • H01L21/30635—Electrolytic etching of AIIIBV compounds
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/228—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a liquid phase, e.g. alloy diffusion processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H01L21/2686—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation using incoherent radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H01L21/3043—Making grooves, e.g. cutting
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/143—Electron beam

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Electrochemistry (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Led Devices (AREA)
FR7531722A 1974-10-17 1975-10-16 Procede d'electrodeposition de metaux sur des substrats semi-conducteurs Granted FR2288389A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB4508174A GB1465567A (en) 1974-10-17 1974-10-17 Deposition of materials onto semiconductors
GB3673175 1975-09-05

Publications (2)

Publication Number Publication Date
FR2288389A1 true FR2288389A1 (fr) 1976-05-14
FR2288389B1 FR2288389B1 (fr) 1982-04-23

Family

ID=26263225

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7531722A Granted FR2288389A1 (fr) 1974-10-17 1975-10-16 Procede d'electrodeposition de metaux sur des substrats semi-conducteurs

Country Status (6)

Country Link
US (1) US4024029A (fr)
JP (1) JPS5191664A (fr)
CA (1) CA1047654A (fr)
DE (1) DE2546697A1 (fr)
FR (1) FR2288389A1 (fr)
NL (1) NL7512238A (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2409597A1 (fr) * 1977-11-18 1979-06-15 Stanford Res Inst Int Procede de formation d'une texture superficielle dans une matiere semiconductrice
FR2412163A1 (fr) * 1977-12-13 1979-07-13 Bosch Gmbh Robert Procede pour la fabrication d'un composant semi-conducteur
FR2596921A1 (fr) * 1986-04-02 1987-10-09 Westinghouse Electric Corp Procede de formation d'un dessin conducteur sur la surface d'un semi-conducteur tel que notamment du silicium, germanium et l'arsenium de gallium

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4144139A (en) * 1977-11-30 1979-03-13 Solarex Corporation Method of plating by means of light
US4379022A (en) * 1979-05-08 1983-04-05 International Business Machines Corporation Method for maskless chemical machining
US4217183A (en) * 1979-05-08 1980-08-12 International Business Machines Corporation Method for locally enhancing electroplating rates
JPS575383A (en) * 1980-06-13 1982-01-12 Fujitsu Ltd Manufacture of semiconductor device
US4507181A (en) * 1984-02-17 1985-03-26 Energy Conversion Devices, Inc. Method of electro-coating a semiconductor device
US5171608A (en) * 1990-09-28 1992-12-15 The Unites States Of America As Represented By The Secretary Of The Navy Method of pattern transfer in photolithography using laser induced metallization
US5882435A (en) * 1993-09-30 1999-03-16 Siemens Solar Gmbh Process for the metal coating of solar cells made of crystalline silicon
US6413388B1 (en) * 2000-02-23 2002-07-02 Nutool Inc. Pad designs and structures for a versatile materials processing apparatus
US6534116B2 (en) * 2000-08-10 2003-03-18 Nutool, Inc. Plating method and apparatus that creates a differential between additive disposed on a top surface and a cavity surface of a workpiece using an external influence
US6902659B2 (en) * 1998-12-01 2005-06-07 Asm Nutool, Inc. Method and apparatus for electro-chemical mechanical deposition
EP1063696B1 (fr) * 1999-06-22 2007-08-22 Interuniversitair Micro-Elektronica Centrum Vzw Procédé d'amélioration de la qualité d'une couche déposée contenant du métal à partir d'un bain de métallisation
US6355153B1 (en) * 1999-09-17 2002-03-12 Nutool, Inc. Chip interconnect and packaging deposition methods and structures
US6921551B2 (en) * 2000-08-10 2005-07-26 Asm Nutool, Inc. Plating method and apparatus for controlling deposition on predetermined portions of a workpiece
US20040170753A1 (en) * 2000-12-18 2004-09-02 Basol Bulent M. Electrochemical mechanical processing using low temperature process environment
US7172497B2 (en) * 2001-01-05 2007-02-06 Asm Nutool, Inc. Fabrication of semiconductor interconnect structures
US7250104B2 (en) * 2003-08-08 2007-07-31 Novellus Systems, Inc. Method and system for optically enhanced metal planarization
US20050230262A1 (en) * 2004-04-20 2005-10-20 Semitool, Inc. Electrochemical methods for the formation of protective features on metallized features
US20060183321A1 (en) * 2004-09-27 2006-08-17 Basol Bulent M Method for reduction of gap fill defects
US8500985B2 (en) * 2006-07-21 2013-08-06 Novellus Systems, Inc. Photoresist-free metal deposition
US7732329B2 (en) * 2006-08-30 2010-06-08 Ipgrip, Llc Method and apparatus for workpiece surface modification for selective material deposition
US20080237048A1 (en) * 2007-03-30 2008-10-02 Ismail Emesh Method and apparatus for selective electrofilling of through-wafer vias
US20080277285A1 (en) * 2007-05-08 2008-11-13 Interuniversitair Microelektronica Centrum Vzw (Imec) Bipolar electroless processing methods

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1295071A (fr) 1960-07-05 1962-06-01 Siemens Ag Procédé pour déposer par électrolyse des couches minces sur des supports
US3294583A (en) * 1962-06-14 1966-12-27 Sprague Electric Co Process of coating a silicon semiconductor with indium using an ion beam
USB436421I5 (fr) * 1965-01-27
US3458368A (en) * 1966-05-23 1969-07-29 Texas Instruments Inc Integrated circuits and fabrication thereof
US3529961A (en) * 1966-12-27 1970-09-22 Gen Electric Formation of thin films of gold,nickel or copper by photolytic deposition
US3506545A (en) * 1967-02-14 1970-04-14 Ibm Method for plating conductive patterns with high resolution
US3516855A (en) * 1967-05-29 1970-06-23 Ibm Method of depositing conductive ions by utilizing electron beam
US3551213A (en) * 1968-09-04 1970-12-29 Bell Telephone Labor Inc Geometrically selective ion bombardment by means of the photoelectric effect

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2409597A1 (fr) * 1977-11-18 1979-06-15 Stanford Res Inst Int Procede de formation d'une texture superficielle dans une matiere semiconductrice
FR2412163A1 (fr) * 1977-12-13 1979-07-13 Bosch Gmbh Robert Procede pour la fabrication d'un composant semi-conducteur
FR2596921A1 (fr) * 1986-04-02 1987-10-09 Westinghouse Electric Corp Procede de formation d'un dessin conducteur sur la surface d'un semi-conducteur tel que notamment du silicium, germanium et l'arsenium de gallium

Also Published As

Publication number Publication date
NL7512238A (nl) 1976-04-21
DE2546697A1 (de) 1976-04-29
US4024029A (en) 1977-05-17
CA1047654A (fr) 1979-01-30
JPS5191664A (fr) 1976-08-11
FR2288389B1 (fr) 1982-04-23

Similar Documents

Publication Publication Date Title
FR2288389A1 (fr) Procede d'electrodeposition de metaux sur des substrats semi-conducteurs
BE836546A (fr) Procede d'enduction d'un sterigme avec une composition de silicone
BE813097A (fr) Procede de revetement d'elements en super-alliage et elements obtenus
FR2287962A1 (fr) Procede d'usinage des surfaces courbes
BE839972A (fr) Procede pour la fabrication d'un dispositif semiconducteur
FR2300964A1 (fr) Procede d'ali
FR2329059A1 (fr) Procede d'elimination de metaux alcalins
BE813176A (fr) Procede d'affinage de metaux
BE813152A (fr) Revetement pour substrats metalliques
FR2297978A1 (fr) Procede d'installation d'
BE868200A (fr) Procede pour fabriquer des substrats ceramiques
BE833774R (fr) Procede d'extraction de metaux
FR2304601A1 (fr) Procede d'ammonoxydation
FR2294001A1 (fr) Procede d'estampage
BE840594A (fr) Procede d'enduction de surfaces
FR2299769A1 (fr) Procede d'application
BE828510A (fr) Procede de depot d'un metal sur une surface
BE846883A (fr) Procede pour l'elimination de mercure metallique,
BE827294A (fr) Procede d'hydrogenation de diacethoxybutene
BE822150A (fr) Procede d'oxydation en surface
BE815826A (fr) Procede d'affinage de metaux ferreux
BE836214A (fr) Procede de production d'hydroxyphenylacetonitriles
FR2272322A1 (fr) Procede d'enrobage.
FR2289479A1 (fr) Procede de fabrication d'halo-anthraquinones
BE759963A (fr) Procede d'etamage electrolytique

Legal Events

Date Code Title Description
ST Notification of lapse