GB1465567A - Deposition of materials onto semiconductors - Google Patents

Deposition of materials onto semiconductors

Info

Publication number
GB1465567A
GB1465567A GB4508174A GB4508174A GB1465567A GB 1465567 A GB1465567 A GB 1465567A GB 4508174 A GB4508174 A GB 4508174A GB 4508174 A GB4508174 A GB 4508174A GB 1465567 A GB1465567 A GB 1465567A
Authority
GB
United Kingdom
Prior art keywords
areas
deposition
semi
substrate
ion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB4508174A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Research Development Corp UK
National Research Development Corp of India
Original Assignee
National Research Development Corp UK
National Research Development Corp of India
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by National Research Development Corp UK, National Research Development Corp of India filed Critical National Research Development Corp UK
Priority to GB4508174A priority Critical patent/GB1465567A/en
Priority to CA237,781A priority patent/CA1047654A/en
Priority to US05/623,079 priority patent/US4024029A/en
Priority to FR7531722A priority patent/FR2288389A1/en
Priority to DE19752546697 priority patent/DE2546697A1/en
Priority to NL7512238A priority patent/NL7512238A/en
Priority to JP12447575A priority patent/JPS5191664A/ja
Publication of GB1465567A publication Critical patent/GB1465567A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3063—Electrolytic etching
    • H01L21/30635—Electrolytic etching of AIIIBV compounds
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/228—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a liquid phase, e.g. alloy diffusion processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H01L21/2686—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation using incoherent radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H01L21/3043—Making grooves, e.g. cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Electrochemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

1465567 Semi-conductor devices NATIONAL RESEARCH DEVELOPMENT CORP 6 Oct 1975 [17 Oct 1974 5 Sept 1975] 45081/74 and 36731/75 Heading H1K [Also in Division C7] A semi-conductor substrate, e.g. GaAs or Si is coated by irradiating with an ion beam, areas to be coated to produce damage followed by immersion in a plating solution containing available ions of the coating material while exposing to radiation of a wavelength sufficiently short to generate free carriers in the semi-conductor whereby deposition is effected. In the case of a metal more electro-positive than hydrogen, deposition occurs on the irradiated areas; a material which forms negative ions deposits on the non-irradiated areas. The ion beam (e.g. of H 2 , N 2 or Ar) may be applied imagewise by scanning or through a mask. Conventional plating solutions are used, e.g. containing Ag, Au or Pt, and may contain a reducing or other agent which prevents oxide formation on the substrate. Visible radiation is used, but R.F., U-V. and I-R. are possible. Multiple metal coatings are made by applying different ion-bombardment dosages in different areas and immersing the substrate in successive plating baths in descending order of ion dosage required for deposition. Thus Ag may be initially applied (H 2 ion-dosage >5À10<SP>16</SP> ions/cm<SP>3</SP>) followed by Au or Pt (<5À10<SP>16</SP> ions/cm<SP>2</SP>) which deposits both on the semiconductor and the Ag. The coated substrate may be heat treated to effect electrical properties (e.g. 450‹-500‹ C. for 10 min.) and plating thereafter continued. Thus the multiple coatings above on GaAs yield ohmic Ag/Au or Pt areas and rectifying GaAs/Au or Pt areas, useful in diodes and FET's. To prevent erosion of high grade semi-conductor during deposition, a piece of lower grade is electrically connected thereto to act as a sacrificial anode. Ion-bombarded semi-conductor is etch resistant and the bombarded substrate may thus be etched, e.g. using ferricyanide in non-bombarded areas prior to deposition. A pre-treatment to remove any surface stresses is advantageous in preventing unwanted depositions. A deposit definition as low as 0À3Á is possible.
GB4508174A 1974-10-17 1974-10-17 Deposition of materials onto semiconductors Expired GB1465567A (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
GB4508174A GB1465567A (en) 1974-10-17 1974-10-17 Deposition of materials onto semiconductors
CA237,781A CA1047654A (en) 1974-10-17 1975-10-16 Electrodeposition on semiconductor material
US05/623,079 US4024029A (en) 1974-10-17 1975-10-16 Electrodeposition
FR7531722A FR2288389A1 (en) 1974-10-17 1975-10-16 METAL ELECTRODEPOSITION PROCESS ON SEMICONDUCTOR SUBSTRATES
DE19752546697 DE2546697A1 (en) 1974-10-17 1975-10-17 METHOD OF ELECTROCHEMICAL DEPOSITION OF A MATERIAL ON A SEMICONDUCTOR BODY
NL7512238A NL7512238A (en) 1974-10-17 1975-10-17 PROCEDURE FOR DEPOSITING ELECTRODE MATERIAL ON A SEMICONDUCTOR AND SEMICONDUCTOR DEVICE OBTAINED ACCORDING TO THIS PROCESS.
JP12447575A JPS5191664A (en) 1974-10-17 1975-10-17

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB4508174A GB1465567A (en) 1974-10-17 1974-10-17 Deposition of materials onto semiconductors

Publications (1)

Publication Number Publication Date
GB1465567A true GB1465567A (en) 1977-02-23

Family

ID=10435809

Family Applications (1)

Application Number Title Priority Date Filing Date
GB4508174A Expired GB1465567A (en) 1974-10-17 1974-10-17 Deposition of materials onto semiconductors

Country Status (1)

Country Link
GB (1) GB1465567A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2188774A (en) * 1986-04-02 1987-10-07 Westinghouse Electric Corp Method of forming a conductive pattern on a semiconductor surface

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2188774A (en) * 1986-04-02 1987-10-07 Westinghouse Electric Corp Method of forming a conductive pattern on a semiconductor surface
GB2188774B (en) * 1986-04-02 1990-10-31 Westinghouse Electric Corp Method of forming a conductive pattern on a semiconductor surface

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee