DE2546609C3 - MOS-Feldeffekttransistor - Google Patents

MOS-Feldeffekttransistor

Info

Publication number
DE2546609C3
DE2546609C3 DE2546609A DE2546609A DE2546609C3 DE 2546609 C3 DE2546609 C3 DE 2546609C3 DE 2546609 A DE2546609 A DE 2546609A DE 2546609 A DE2546609 A DE 2546609A DE 2546609 C3 DE2546609 C3 DE 2546609C3
Authority
DE
Germany
Prior art keywords
source
drain
electrode
control voltage
semiconductor substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE2546609A
Other languages
German (de)
English (en)
Other versions
DE2546609A1 (de
DE2546609B2 (de
Inventor
Shiro Neyagawa Horiuchi
Michihiro Inoue
Takeji Kimura
Masaharu Moriguchi Sato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP49120856A external-priority patent/JPS5146886A/ja
Priority claimed from JP50100846A external-priority patent/JPS5224477A/ja
Priority claimed from JP50106750A external-priority patent/JPS5230183A/ja
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Publication of DE2546609A1 publication Critical patent/DE2546609A1/de
Publication of DE2546609B2 publication Critical patent/DE2546609B2/de
Application granted granted Critical
Publication of DE2546609C3 publication Critical patent/DE2546609C3/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • G—PHYSICS
    • G10—MUSICAL INSTRUMENTS; ACOUSTICS
    • G10H—ELECTROPHONIC MUSICAL INSTRUMENTS; INSTRUMENTS IN WHICH THE TONES ARE GENERATED BY ELECTROMECHANICAL MEANS OR ELECTRONIC GENERATORS, OR IN WHICH THE TONES ARE SYNTHESISED FROM A DATA STORE
    • G10H1/00—Details of electrophonic musical instruments
    • G10H1/02—Means for controlling the tone frequencies, e.g. attack or decay; Means for producing special musical effects, e.g. vibratos or glissandos
    • G10H1/04—Means for controlling the tone frequencies, e.g. attack or decay; Means for producing special musical effects, e.g. vibratos or glissandos by additional modulation
    • G10H1/053—Means for controlling the tone frequencies, e.g. attack or decay; Means for producing special musical effects, e.g. vibratos or glissandos by additional modulation during execution only
    • G10H1/055—Means for controlling the tone frequencies, e.g. attack or decay; Means for producing special musical effects, e.g. vibratos or glissandos by additional modulation during execution only by switches with variable impedance elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/221—Channel regions of field-effect devices of FETs
    • H10D62/235—Channel regions of field-effect devices of FETs of IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/221—Channel regions of field-effect devices of FETs
    • H10D62/235—Channel regions of field-effect devices of FETs of IGFETs
    • H10D62/299—Channel regions of field-effect devices of FETs of IGFETs having lateral doping variations
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/901—MOSFET substrate bias

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Acoustics & Sound (AREA)
  • Multimedia (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
DE2546609A 1974-10-18 1975-10-17 MOS-Feldeffekttransistor Expired DE2546609C3 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP49120856A JPS5146886A (en) 1974-10-18 1974-10-18 Kaheninpiidansusoshi
JP50100846A JPS5224477A (en) 1975-08-19 1975-08-19 Variable impedance element
JP50106750A JPS5230183A (en) 1975-09-02 1975-09-02 Mos semiconductor device and process for producing it

Publications (3)

Publication Number Publication Date
DE2546609A1 DE2546609A1 (de) 1976-04-22
DE2546609B2 DE2546609B2 (de) 1979-05-23
DE2546609C3 true DE2546609C3 (de) 1980-01-31

Family

ID=27309320

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2546609A Expired DE2546609C3 (de) 1974-10-18 1975-10-17 MOS-Feldeffekttransistor

Country Status (5)

Country Link
US (1) US4025940A (enExample)
DE (1) DE2546609C3 (enExample)
FR (1) FR2288397A1 (enExample)
GB (1) GB1527773A (enExample)
IT (1) IT1056151B (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USRE32071E (en) * 1977-12-20 1986-01-21 International Business Machines Corporation Resistive gate FET flip-flop storage cell
US4163986A (en) * 1978-05-03 1979-08-07 International Business Machines Corporation Twin channel Lorentz coupled depletion width modulation effect magnetic field sensor
US4173022A (en) * 1978-05-09 1979-10-30 Rca Corp. Integrated gate field effect transistors having closed gate structure with controlled avalanche characteristics
JPS5727070A (en) * 1980-07-25 1982-02-13 Toshiba Corp Mos type semiconductor device
US4546453A (en) * 1982-06-22 1985-10-08 Motorola, Inc. Four-state ROM cell with increased differential between states
DE3235677A1 (de) * 1982-09-27 1984-03-29 Siemens AG, 1000 Berlin und 8000 München Feldeffekttransistor des verarmungstyps und verfahren zu seiner herstellung
JPH0620133B2 (ja) * 1987-05-28 1994-03-16 宮城工業高等専門学校長 Ｍｏｓｆｅｔ装置
US5258638A (en) * 1992-08-13 1993-11-02 Xerox Corporation Thermal ink jet power MOS device design/layout
WO2002052653A1 (fr) * 2000-12-25 2002-07-04 Lev Vasilievich Kozhitov Dispositifs semi-conducteurs non planaires munis d'une couche active close cylindrique
RU2175795C1 (ru) * 2000-12-25 2001-11-10 Московский государственный институт стали и сплавов (технологический университет) Полевой транзистор с изолированным затвором

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3328601A (en) * 1964-04-06 1967-06-27 Northern Electric Co Distributed field effect devices
US3745426A (en) * 1970-06-01 1973-07-10 Rca Corp Insulated gate field-effect transistor with variable gain
JPS5137151B2 (enExample) * 1971-09-08 1976-10-14

Also Published As

Publication number Publication date
FR2288397A1 (fr) 1976-05-14
IT1056151B (it) 1982-01-30
DE2546609A1 (de) 1976-04-22
FR2288397B1 (enExample) 1981-06-12
GB1527773A (en) 1978-10-11
DE2546609B2 (de) 1979-05-23
US4025940A (en) 1977-05-24

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Legal Events

Date Code Title Description
C3 Grant after two publication steps (3rd publication)
8339 Ceased/non-payment of the annual fee