FR2288397A1 - Dispositif semi-conducteur du type mos - Google Patents

Dispositif semi-conducteur du type mos

Info

Publication number
FR2288397A1
FR2288397A1 FR7532007A FR7532007A FR2288397A1 FR 2288397 A1 FR2288397 A1 FR 2288397A1 FR 7532007 A FR7532007 A FR 7532007A FR 7532007 A FR7532007 A FR 7532007A FR 2288397 A1 FR2288397 A1 FR 2288397A1
Authority
FR
France
Prior art keywords
type device
mos type
semiconductor mos
semiconductor
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7532007A
Other languages
English (en)
Other versions
FR2288397B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP12085674A external-priority patent/JPS5146886A/ja
Priority claimed from JP10084675A external-priority patent/JPS5224477A/ja
Priority claimed from JP50106750A external-priority patent/JPS5230183A/ja
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Publication of FR2288397A1 publication Critical patent/FR2288397A1/fr
Application granted granted Critical
Publication of FR2288397B1 publication Critical patent/FR2288397B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0843—Source or drain regions of field-effect devices
    • H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
    • G—PHYSICS
    • G10—MUSICAL INSTRUMENTS; ACOUSTICS
    • G10H—ELECTROPHONIC MUSICAL INSTRUMENTS; INSTRUMENTS IN WHICH THE TONES ARE GENERATED BY ELECTROMECHANICAL MEANS OR ELECTRONIC GENERATORS, OR IN WHICH THE TONES ARE SYNTHESISED FROM A DATA STORE
    • G10H1/00—Details of electrophonic musical instruments
    • G10H1/02—Means for controlling the tone frequencies, e.g. attack or decay; Means for producing special musical effects, e.g. vibratos or glissandos
    • G10H1/04—Means for controlling the tone frequencies, e.g. attack or decay; Means for producing special musical effects, e.g. vibratos or glissandos by additional modulation
    • G10H1/053—Means for controlling the tone frequencies, e.g. attack or decay; Means for producing special musical effects, e.g. vibratos or glissandos by additional modulation during execution only
    • G10H1/055—Means for controlling the tone frequencies, e.g. attack or decay; Means for producing special musical effects, e.g. vibratos or glissandos by additional modulation during execution only by switches with variable impedance elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
    • H01L29/0692—Surface layout
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1025—Channel region of field-effect devices
    • H01L29/1029—Channel region of field-effect devices of field-effect transistors
    • H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1025—Channel region of field-effect devices
    • H01L29/1029—Channel region of field-effect devices of field-effect transistors
    • H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
    • H01L29/1041—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure with a non-uniform doping structure in the channel region surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/901—MOSFET substrate bias

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Acoustics & Sound (AREA)
  • Multimedia (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
FR7532007A 1974-10-18 1975-10-20 Dispositif semi-conducteur du type mos Granted FR2288397A1 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP12085674A JPS5146886A (ja) 1974-10-18 1974-10-18 Kaheninpiidansusoshi
JP10084675A JPS5224477A (en) 1975-08-19 1975-08-19 Variable impedance element
JP50106750A JPS5230183A (en) 1975-09-02 1975-09-02 Mos semiconductor device and process for producing it

Publications (2)

Publication Number Publication Date
FR2288397A1 true FR2288397A1 (fr) 1976-05-14
FR2288397B1 FR2288397B1 (fr) 1981-06-12

Family

ID=27309320

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7532007A Granted FR2288397A1 (fr) 1974-10-18 1975-10-20 Dispositif semi-conducteur du type mos

Country Status (5)

Country Link
US (1) US4025940A (fr)
DE (1) DE2546609C3 (fr)
FR (1) FR2288397A1 (fr)
GB (1) GB1527773A (fr)
IT (1) IT1056151B (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0005183A1 (fr) * 1978-05-03 1979-11-14 International Business Machines Corporation Détecteur de champs notamment magnétiques du type transistor à effet de champ à semi-conducteur
FR2533752A1 (fr) * 1982-09-27 1984-03-30 Siemens Ag Transistor a effet de champ du type a appauvrissement et procede pour sa fabrication

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USRE32071E (en) * 1977-12-20 1986-01-21 International Business Machines Corporation Resistive gate FET flip-flop storage cell
US4173022A (en) * 1978-05-09 1979-10-30 Rca Corp. Integrated gate field effect transistors having closed gate structure with controlled avalanche characteristics
JPS5727070A (en) * 1980-07-25 1982-02-13 Toshiba Corp Mos type semiconductor device
US4546453A (en) * 1982-06-22 1985-10-08 Motorola, Inc. Four-state ROM cell with increased differential between states
JPH0620133B2 (ja) * 1987-05-28 1994-03-16 宮城工業高等専門学校長 Ｍｏｓｆｅｔ装置
US5258638A (en) * 1992-08-13 1993-11-02 Xerox Corporation Thermal ink jet power MOS device design/layout
WO2002052653A1 (fr) * 2000-12-25 2002-07-04 Lev Vasilievich Kozhitov Dispositifs semi-conducteurs non planaires munis d'une couche active close cylindrique

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3328601A (en) * 1964-04-06 1967-06-27 Northern Electric Co Distributed field effect devices
US3745426A (en) * 1970-06-01 1973-07-10 Rca Corp Insulated gate field-effect transistor with variable gain
JPS5137151B2 (fr) * 1971-09-08 1976-10-14

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0005183A1 (fr) * 1978-05-03 1979-11-14 International Business Machines Corporation Détecteur de champs notamment magnétiques du type transistor à effet de champ à semi-conducteur
FR2533752A1 (fr) * 1982-09-27 1984-03-30 Siemens Ag Transistor a effet de champ du type a appauvrissement et procede pour sa fabrication

Also Published As

Publication number Publication date
US4025940A (en) 1977-05-24
IT1056151B (it) 1982-01-30
DE2546609B2 (de) 1979-05-23
GB1527773A (en) 1978-10-11
FR2288397B1 (fr) 1981-06-12
DE2546609A1 (de) 1976-04-22
DE2546609C3 (de) 1980-01-31

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Legal Events

Date Code Title Description
ST Notification of lapse