DE2514466B2 - Integrierte halbleiterschaltung - Google Patents
Integrierte halbleiterschaltungInfo
- Publication number
- DE2514466B2 DE2514466B2 DE19752514466 DE2514466A DE2514466B2 DE 2514466 B2 DE2514466 B2 DE 2514466B2 DE 19752514466 DE19752514466 DE 19752514466 DE 2514466 A DE2514466 A DE 2514466A DE 2514466 B2 DE2514466 B2 DE 2514466B2
- Authority
- DE
- Germany
- Prior art keywords
- substrate
- zone
- voltage
- transistor
- semiconductor layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
- 239000004065 semiconductor Substances 0.000 title claims description 51
- 239000000758 substrate Substances 0.000 claims description 81
- 238000002955 isolation Methods 0.000 claims description 24
- 238000009413 insulation Methods 0.000 claims description 11
- 230000000149 penetrating effect Effects 0.000 claims description 3
- 238000000034 method Methods 0.000 description 15
- 230000001681 protective effect Effects 0.000 description 6
- 230000003071 parasitic effect Effects 0.000 description 4
- 239000004020 conductor Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0641—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region without components of the field effect type
- H01L27/0647—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. vertical bipolar transistor and bipolar lateral transistor and resistor
- H01L27/0652—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
- H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Bipolar Integrated Circuits (AREA)
- Element Separation (AREA)
- Semiconductor Integrated Circuits (AREA)
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19752514466 DE2514466B2 (de) | 1975-04-03 | 1975-04-03 | Integrierte halbleiterschaltung |
| US05/642,434 US4024417A (en) | 1975-04-03 | 1975-12-19 | Integrated semiconductor structure with means to prevent unlimited current flow |
| FR7605141A FR2313777A1 (fr) | 1975-04-03 | 1976-02-17 | Agencement semi-conducteur integre |
| IT20748/76A IT1056804B (it) | 1975-04-03 | 1976-03-02 | Struttura semiconduttrice a circutto intergrato |
| JP51030930A JPS51123083A (en) | 1975-04-03 | 1976-03-23 | Integrated semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19752514466 DE2514466B2 (de) | 1975-04-03 | 1975-04-03 | Integrierte halbleiterschaltung |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE2514466A1 DE2514466A1 (de) | 1976-10-14 |
| DE2514466B2 true DE2514466B2 (de) | 1977-04-21 |
Family
ID=5942969
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19752514466 Ceased DE2514466B2 (de) | 1975-04-03 | 1975-04-03 | Integrierte halbleiterschaltung |
Country Status (5)
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54148491A (en) * | 1978-05-15 | 1979-11-20 | Nec Corp | Semiconductor integrated circuit |
| US4223238A (en) * | 1978-08-17 | 1980-09-16 | Motorola, Inc. | Integrated circuit substrate charge pump |
| US4298334A (en) * | 1979-11-26 | 1981-11-03 | Honeywell Inc. | Dynamically checked safety load switching circuit |
| JPS6340647Y2 (US20080094685A1-20080424-C00004.png) * | 1981-03-06 | 1988-10-24 | ||
| JPS5852315U (ja) * | 1981-10-06 | 1983-04-09 | 日立建機株式会社 | ピン結合装置 |
| JPS58127363A (ja) * | 1982-01-25 | 1983-07-29 | Hitachi Ltd | 半導体集積回路装置 |
| DE3276513D1 (en) * | 1982-11-26 | 1987-07-09 | Ibm | Self-biased resistor structure and application to interface circuits realization |
| US4562454A (en) * | 1983-12-29 | 1985-12-31 | Motorola, Inc. | Electronic fuse for semiconductor devices |
| US4581547A (en) * | 1984-02-22 | 1986-04-08 | Motorola, Inc. | Integrated circuit that eliminates latch-up and analog signal error due to current injected from the substrate |
| US4577211A (en) * | 1984-04-02 | 1986-03-18 | Motorola, Inc. | Integrated circuit and method for biasing an epitaxial layer |
| JPS61127165A (ja) * | 1984-11-24 | 1986-06-14 | Sharp Corp | 半導体装置 |
| FR2613131B1 (fr) * | 1987-03-27 | 1989-07-28 | Thomson Csf | Circuit integre protege contre des surtensions |
| FR2655196B1 (fr) * | 1989-11-29 | 1992-04-10 | Sgs Thomson Microelectronics | Circuit d'isolation dynamique de circuits integres. |
| US5428297A (en) * | 1993-06-15 | 1995-06-27 | Grace; James W. | Precision integrated resistors |
| US5495123A (en) * | 1994-10-31 | 1996-02-27 | Sgs-Thomson Microelectronics, Inc. | Structure to protect against below ground current injection |
| US5834826A (en) * | 1997-05-08 | 1998-11-10 | Stmicroelectronics, Inc. | Protection against adverse parasitic effects in junction-isolated integrated circuits |
| US6839211B2 (en) * | 2002-02-21 | 2005-01-04 | Broadcom Corporation | Methods and systems for reducing power-on failure of integrated circuits |
| US20040036131A1 (en) * | 2002-08-23 | 2004-02-26 | Micron Technology, Inc. | Electrostatic discharge protection devices having transistors with textured surfaces |
| US8384157B2 (en) * | 2006-05-10 | 2013-02-26 | International Rectifier Corporation | High ohmic integrated resistor with improved linearity |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CA886210A (en) * | 1971-11-16 | Northern Electric Company Limited | High-low voltage detector | |
| US3541357A (en) * | 1968-04-29 | 1970-11-17 | Gen Electric | Integrated circuit for alternating current operation |
| US3725675A (en) * | 1971-03-29 | 1973-04-03 | Honeywell Inf Systems | Power sequencing control circuit |
| GB1405503A (en) * | 1972-11-16 | 1975-09-10 | Texas Instruments Inc | Integrated circuits |
| US3860461A (en) * | 1973-05-29 | 1975-01-14 | Texas Instruments Inc | Method for fabricating semiconductor devices utilizing composite masking |
-
1975
- 1975-04-03 DE DE19752514466 patent/DE2514466B2/de not_active Ceased
- 1975-12-19 US US05/642,434 patent/US4024417A/en not_active Expired - Lifetime
-
1976
- 1976-02-17 FR FR7605141A patent/FR2313777A1/fr active Granted
- 1976-03-02 IT IT20748/76A patent/IT1056804B/it active
- 1976-03-23 JP JP51030930A patent/JPS51123083A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5346702B2 (US20080094685A1-20080424-C00004.png) | 1978-12-15 |
| DE2514466A1 (de) | 1976-10-14 |
| FR2313777A1 (fr) | 1976-12-31 |
| FR2313777B1 (US20080094685A1-20080424-C00004.png) | 1979-02-02 |
| JPS51123083A (en) | 1976-10-27 |
| US4024417A (en) | 1977-05-17 |
| IT1056804B (it) | 1982-02-20 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8235 | Patent refused |