DE2460988C2 - Verfahren zum Niederschlagen eines Musters aus einem dünnen Film auf einem anorganischen Substrat - Google Patents

Verfahren zum Niederschlagen eines Musters aus einem dünnen Film auf einem anorganischen Substrat

Info

Publication number
DE2460988C2
DE2460988C2 DE2460988A DE2460988A DE2460988C2 DE 2460988 C2 DE2460988 C2 DE 2460988C2 DE 2460988 A DE2460988 A DE 2460988A DE 2460988 A DE2460988 A DE 2460988A DE 2460988 C2 DE2460988 C2 DE 2460988C2
Authority
DE
Germany
Prior art keywords
layer
pattern
mask
photoresist
openings
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE2460988A
Other languages
German (de)
English (en)
Other versions
DE2460988A1 (de
Inventor
Bai-Cwo Wappingers Falls N.Y. Feng
Richard Henry Brookfield Center Conn. Flachbart
Leonard Joel Fried
Harold A. Poughkeepsie N.Y. Levine
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of DE2460988A1 publication Critical patent/DE2460988A1/de
Application granted granted Critical
Publication of DE2460988C2 publication Critical patent/DE2460988C2/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
    • H05K3/04—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed mechanically, e.g. by punching
    • H05K3/046—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed mechanically, e.g. by punching by selective transfer or selective detachment of a conductive layer
    • H05K3/048—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed mechanically, e.g. by punching by selective transfer or selective detachment of a conductive layer using a lift-off resist pattern or a release layer pattern
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/095—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having more than one photosensitive layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293—Organic, e.g. plastic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)
  • Weting (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
DE2460988A 1974-03-05 1974-12-21 Verfahren zum Niederschlagen eines Musters aus einem dünnen Film auf einem anorganischen Substrat Expired DE2460988C2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/448,327 US3982943A (en) 1974-03-05 1974-03-05 Lift-off method of fabricating thin films and a structure utilizable as a lift-off mask

Publications (2)

Publication Number Publication Date
DE2460988A1 DE2460988A1 (de) 1975-09-11
DE2460988C2 true DE2460988C2 (de) 1983-03-31

Family

ID=23779862

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2460988A Expired DE2460988C2 (de) 1974-03-05 1974-12-21 Verfahren zum Niederschlagen eines Musters aus einem dünnen Film auf einem anorganischen Substrat

Country Status (5)

Country Link
US (1) US3982943A (enExample)
JP (1) JPS5735451B2 (enExample)
DE (1) DE2460988C2 (enExample)
FR (1) FR2263605B1 (enExample)
GB (1) GB1450509A (enExample)

Families Citing this family (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4109045A (en) * 1972-11-06 1978-08-22 Canon Kabushiki Kaisha Information recording medium
US4191573A (en) * 1974-10-09 1980-03-04 Fuji Photo Film Co., Ltd. Photosensitive positive image forming process with two photo-sensitive layers
JPS5555540Y2 (enExample) * 1976-01-27 1980-12-23
FR2365854A1 (fr) * 1976-09-24 1978-04-21 Thomson Brandt Procede de fabrication d'un support d'information enregistrable et lisible optiquement et support obtenu par un tel procede
DE2658422C2 (de) * 1976-12-23 1986-05-22 Hoechst Ag, 6230 Frankfurt Verfahren zur Herstellung eines Negativ-Trockenresistfilms
US4165395A (en) * 1977-06-30 1979-08-21 International Business Machines Corporation Process for forming a high aspect ratio structure by successive exposures with electron beam and actinic radiation
US4218532A (en) * 1977-10-13 1980-08-19 Bell Telephone Laboratories, Incorporated Photolithographic technique for depositing thin films
JPS5921540B2 (ja) * 1977-10-26 1984-05-21 セイコーエプソン株式会社 フオトレジストパタ−ンの形成方法
US4132586A (en) * 1977-12-20 1979-01-02 International Business Machines Corporation Selective dry etching of substrates
US4180604A (en) * 1977-12-30 1979-12-25 International Business Machines Corporation Two layer resist system
US4238559A (en) * 1978-08-24 1980-12-09 International Business Machines Corporation Two layer resist system
US4224361A (en) * 1978-09-05 1980-09-23 International Business Machines Corporation High temperature lift-off technique
US4202914A (en) * 1978-12-29 1980-05-13 International Business Machines Corporation Method of depositing thin films of small dimensions utilizing silicon nitride lift-off mask
DE2911503A1 (de) * 1979-03-23 1980-09-25 Siemens Ag Verfahren zur herstellung von strukturen aus positiv-photolackschichten ohne stoerende interferenzeffekte
JPS5618420A (en) * 1979-07-23 1981-02-21 Fujitsu Ltd Manufacture of semiconductor device
EP0025805B1 (de) * 1979-09-21 1983-04-06 CENSOR Patent- und Versuchs-Anstalt Verfahren zur Übertragung eines Musters auf eine Halbleiterscheibe
US4284706A (en) * 1979-12-03 1981-08-18 International Business Machines Corporation Lithographic resist composition for a lift-off process
US4307179A (en) * 1980-07-03 1981-12-22 International Business Machines Corporation Planar metal interconnection system and process
US4332881A (en) * 1980-07-28 1982-06-01 Bell Telephone Laboratories, Incorporated Resist adhesion in integrated circuit processing
US4461071A (en) * 1982-08-23 1984-07-24 Xerox Corporation Photolithographic process for fabricating thin film transistors
US4464458A (en) * 1982-12-30 1984-08-07 International Business Machines Corporation Process for forming resist masks utilizing O-quinone diazide and pyrene
US4861699A (en) * 1983-03-16 1989-08-29 U.S. Philips Corporation Method of making a master disk used in making optical readable information disks
JPS59226346A (ja) * 1983-06-07 1984-12-19 Fuotopori Ouka Kk プリント回路の製造方法
US4560435A (en) * 1984-10-01 1985-12-24 International Business Machines Corporation Composite back-etch/lift-off stencil for proximity effect minimization
US4571374A (en) * 1984-12-27 1986-02-18 Minnesota Mining And Manufacturing Company Multilayer dry-film positive-acting laminable photoresist with two photoresist layers wherein one layer includes thermal adhesive
US4687730A (en) * 1985-10-30 1987-08-18 Rca Corporation Lift-off technique for producing metal pattern using single photoresist processing and oblique angle metal deposition
US4654119A (en) * 1985-11-18 1987-03-31 International Business Machines Corporation Method for making submicron mask openings using sidewall and lift-off techniques
JPH0638299B2 (ja) * 1986-08-27 1994-05-18 パイオニア株式会社 案内溝付光デイスクの製造方法
EP0313993A1 (en) * 1987-10-20 1989-05-03 Matsushita Electric Industrial Co., Ltd. Pattern forming method
JPH01128522A (ja) * 1987-11-13 1989-05-22 Fujitsu Ltd レジストパターンの形成方法
JPH0287146A (ja) * 1988-09-26 1990-03-28 Hitachi Ltd 半導体装置の製造方法
EP0894542B1 (en) 1991-10-04 2004-01-21 Cfmt, Inc. Ultracleaning of involuted microparts
US5395740A (en) * 1993-01-27 1995-03-07 Motorola, Inc. Method for fabricating electrode patterns
GB2291207B (en) * 1994-07-14 1998-03-25 Hyundai Electronics Ind Method for forming resist patterns
JP4180885B2 (ja) * 2002-11-11 2008-11-12 エスアイアイ・ナノテクノロジー株式会社 近視野顕微鏡用光伝搬体プローブの製造方法
US7205228B2 (en) * 2003-06-03 2007-04-17 Applied Materials, Inc. Selective metal encapsulation schemes
CN115172162A (zh) * 2022-07-12 2022-10-11 福建兆元光电有限公司 一种金属剥离方法及led制备方法
CN117706863A (zh) * 2023-10-20 2024-03-15 本源量子计算科技（合肥）股份有限公司 光刻胶掩膜及其制造方法、金属结构的制造方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE579138A (enExample) * 1958-07-10
NL255517A (enExample) * 1959-09-04
US3666473A (en) * 1970-10-06 1972-05-30 Ibm Positive photoresists for projection exposure
US3834907A (en) * 1971-06-07 1974-09-10 Eastman Kodak Co Photographic elements containing color-providing layer units for amplification processes
US3849136A (en) * 1973-07-31 1974-11-19 Ibm Masking of deposited thin films by use of a masking layer photoresist composite
US3873361A (en) * 1973-11-29 1975-03-25 Ibm Method of depositing thin film utilizing a lift-off mask
US3934057A (en) * 1973-12-19 1976-01-20 International Business Machines Corporation High sensitivity positive resist layers and mask formation process

Also Published As

Publication number Publication date
DE2460988A1 (de) 1975-09-11
FR2263605B1 (enExample) 1976-12-31
JPS5735451B2 (enExample) 1982-07-29
US3982943A (en) 1976-09-28
JPS50120826A (enExample) 1975-09-22
GB1450509A (en) 1976-09-22
FR2263605A1 (enExample) 1975-10-03

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Legal Events

Date Code Title Description
OD Request for examination
8126 Change of the secondary classification

Ipc: ENTFAELLT

8181 Inventor (new situation)

Free format text: FENG, BAI-CWO, WAPPINGERS FALLS, N.Y., US FLACHBART, RICHARD HENRY, BROOKFIELD CENTER, CONN., US FRIED, LEONARD JOEL LEVINE, HAROLD A., POUGHKEEPSIE, N.Y., US

D2 Grant after examination
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee