DE2459562B2 - Integrierte Schaltungen - Google Patents
Integrierte SchaltungenInfo
- Publication number
- DE2459562B2 DE2459562B2 DE2459562A DE2459562A DE2459562B2 DE 2459562 B2 DE2459562 B2 DE 2459562B2 DE 2459562 A DE2459562 A DE 2459562A DE 2459562 A DE2459562 A DE 2459562A DE 2459562 B2 DE2459562 B2 DE 2459562B2
- Authority
- DE
- Germany
- Prior art keywords
- current
- transistors
- master
- slave
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000002347 injection Methods 0.000 claims description 107
- 239000007924 injection Substances 0.000 claims description 107
- 239000004065 semiconductor Substances 0.000 claims description 18
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- 239000002800 charge carrier Substances 0.000 claims description 7
- 230000007704 transition Effects 0.000 claims 4
- 239000000969 carrier Substances 0.000 claims 2
- 230000001105 regulatory effect Effects 0.000 claims 2
- 239000003638 chemical reducing agent Substances 0.000 claims 1
- 230000001276 controlling effect Effects 0.000 claims 1
- 239000010410 layer Substances 0.000 description 149
- 239000004020 conductor Substances 0.000 description 13
- 238000000926 separation method Methods 0.000 description 11
- 229910052782 aluminium Inorganic materials 0.000 description 10
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 10
- 238000010586 diagram Methods 0.000 description 10
- 239000000758 substrate Substances 0.000 description 10
- 238000000034 method Methods 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 229910052814 silicon oxide Inorganic materials 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 230000004048 modification Effects 0.000 description 5
- 238000012986 modification Methods 0.000 description 5
- 238000002360 preparation method Methods 0.000 description 4
- 239000002344 surface layer Substances 0.000 description 4
- 230000000295 complement effect Effects 0.000 description 3
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 230000006978 adaptation Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006880 cross-coupling reaction Methods 0.000 description 1
- 238000009795 derivation Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000004401 flow injection analysis Methods 0.000 description 1
- 238000009415 formwork Methods 0.000 description 1
- 230000012447 hatching Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/411—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only
- G11C11/4113—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only with at least one cell access to base or collector of at least one of said transistors, e.g. via access diodes, access transistors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
- G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/26—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback
- H03K3/28—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback
- H03K3/281—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator
- H03K3/286—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator bistable
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/26—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback
- H03K3/28—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback
- H03K3/281—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator
- H03K3/286—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator bistable
- H03K3/289—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator bistable of the primary-secondary type
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B10/00—Static random access memory [SRAM] devices
- H10B10/10—SRAM devices comprising bipolar components
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/65—Integrated injection logic
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Bipolar Integrated Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
- Shift Register Type Memory (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB59462/73A GB1494481A (en) | 1973-12-21 | 1973-12-21 | Electrical circuits comprising master/slave bistable arrangements |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE2459562A1 DE2459562A1 (de) | 1975-07-03 |
| DE2459562B2 true DE2459562B2 (de) | 1979-11-29 |
Family
ID=10483808
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE2459562A Withdrawn DE2459562B2 (de) | 1973-12-21 | 1974-12-17 | Integrierte Schaltungen |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US3993918A (enExample) |
| JP (1) | JPS5317853B2 (enExample) |
| AU (1) | AU498031B2 (enExample) |
| CA (1) | CA1023011A (enExample) |
| DE (1) | DE2459562B2 (enExample) |
| FR (1) | FR2255709B1 (enExample) |
| GB (1) | GB1494481A (enExample) |
| IT (1) | IT1027799B (enExample) |
Families Citing this family (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2442773C3 (de) * | 1974-09-06 | 1978-12-14 | Deutsche Itt Industries Gmbh, 7800 Freiburg | Integrierte Master-Slave-Flipflopschaltung |
| JPS597245B2 (ja) * | 1975-12-01 | 1984-02-17 | 株式会社東芝 | ハンドウタイロンリカイロ |
| NL7606193A (nl) * | 1976-06-09 | 1977-12-13 | Philips Nv | Geintegreerde schakeling. |
| FR2356314A1 (fr) * | 1976-06-22 | 1978-01-20 | Radiotechnique Compelec | Circuit integre logique a effet de seuil avec hysteresis |
| US4197470A (en) * | 1976-07-15 | 1980-04-08 | Texas Instruments Incorporated | Triggerable flip-flop |
| US4150392A (en) * | 1976-07-31 | 1979-04-17 | Nippon Gakki Seizo Kabushiki Kaisha | Semiconductor integrated flip-flop circuit device including merged bipolar and field effect transistors |
| NL7612222A (nl) * | 1976-11-04 | 1978-05-08 | Philips Nv | Geintegreerde schakeling. |
| US4072869A (en) * | 1976-12-10 | 1978-02-07 | Ncr Corporation | Hazard-free clocked master/slave flip-flop |
| US4160173A (en) * | 1976-12-14 | 1979-07-03 | Tokyo Shibaura Electric Co., Ltd. | Logic circuit with two pairs of cross-coupled nand/nor gates |
| US4085341A (en) * | 1976-12-20 | 1978-04-18 | Motorola, Inc. | Integrated injection logic circuit having reduced delay |
| FR2404962A1 (fr) * | 1977-09-28 | 1979-04-27 | Ibm France | Dispositif semi-conducteur du genre cellule bistable en technologie a injection de courant, commandee par l'injecteur |
| US4163244A (en) * | 1977-10-28 | 1979-07-31 | General Electric Company | Symmetrical integrated injection logic circuit |
| DE2805217C3 (de) * | 1978-02-08 | 1980-11-20 | Deutsche Itt Industries Gmbh, 7800 Freiburg | Monolithisch integrierte I2 L-Schaltung fur ein Zweiphasen-Schieberegister |
| US4200811A (en) * | 1978-05-11 | 1980-04-29 | Rca Corporation | Frequency divider circuit |
| JPS5570133A (en) * | 1978-11-21 | 1980-05-27 | Toshiba Corp | Divider circuit |
| FR2458951A1 (fr) * | 1979-06-12 | 1981-01-02 | Thomson Csf | Procede pour decaler les seuils integres a operateurs logiques inegres a injection |
| DE2926050C2 (de) * | 1979-06-28 | 1981-10-01 | Ibm Deutschland Gmbh, 7000 Stuttgart | Verfahren und Schaltungsanordnung zum Lesen Und/oder Schreiben eines integrierten Halbleiterspeichers mit Speicherzellen in MTL-Technik |
| WO1981000332A1 (en) * | 1979-07-19 | 1981-02-05 | Motorola Inc | Bistable circuit and shift register using integrated injection logic |
| DE2943565C2 (de) * | 1979-10-29 | 1981-11-12 | Ibm Deutschland Gmbh, 7000 Stuttgart | Speicherzellennachbildung zur Referenzspannungserzeugung für Halbleiterspeicher in MTL-Technik |
| FR2469049A1 (fr) * | 1979-10-30 | 1981-05-08 | Ibm France | Circuit comportant au moins deux dispositifs semi-conducteurs en technologie mtl presentant des temps de montee differents et circuits logiques en derivant |
| DE2944141A1 (de) * | 1979-11-02 | 1981-05-14 | Ibm Deutschland Gmbh, 7000 Stuttgart | Monolithisch integrierte speicheranordnung |
| US4491745A (en) * | 1982-08-12 | 1985-01-01 | Motorola, Inc. | TTL flip-flop with clamping diode for eliminating race conditions |
| US4591737A (en) * | 1982-12-13 | 1986-05-27 | Advanced Micro Devices, Inc. | Master-slave multivibrator with improved metastable response characteristic |
| US4604534A (en) * | 1984-12-03 | 1986-08-05 | International Business Machines Corporation | Highly sensitive high performance sense amplifiers |
| DE58908419D1 (de) * | 1989-08-16 | 1994-10-27 | Itt Ind Gmbh Deutsche | Zweiphasengesteuertes Schieberegister in Bipolartechnik. |
| US20040050135A1 (en) * | 2002-09-18 | 2004-03-18 | Launius William E. | Axle straightening press |
| US7836740B2 (en) * | 2002-09-18 | 2010-11-23 | Launius Jr William E | Axle straightening press |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3440449A (en) * | 1966-12-07 | 1969-04-22 | Motorola Inc | Gated dc coupled j-k flip-flop |
| US3591856A (en) * | 1967-11-07 | 1971-07-06 | Texas Instruments Inc | J-k master-slave flip-flop |
-
1973
- 1973-12-21 GB GB59462/73A patent/GB1494481A/en not_active Expired
-
1974
- 1974-12-12 US US05/532,259 patent/US3993918A/en not_active Expired - Lifetime
- 1974-12-12 CA CA216,024A patent/CA1023011A/en not_active Expired
- 1974-12-17 DE DE2459562A patent/DE2459562B2/de not_active Withdrawn
- 1974-12-18 IT IT30721/74A patent/IT1027799B/it active
- 1974-12-19 AU AU76677/74A patent/AU498031B2/en not_active Expired
- 1974-12-21 JP JP14749474A patent/JPS5317853B2/ja not_active Expired
- 1974-12-23 FR FR7442476A patent/FR2255709B1/fr not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| CA1023011A (en) | 1977-12-20 |
| IT1027799B (it) | 1978-12-20 |
| AU498031B2 (en) | 1979-02-01 |
| FR2255709B1 (enExample) | 1978-03-24 |
| US3993918A (en) | 1976-11-23 |
| AU7667774A (en) | 1976-06-24 |
| GB1494481A (en) | 1977-12-07 |
| JPS50107846A (enExample) | 1975-08-25 |
| JPS5317853B2 (enExample) | 1978-06-12 |
| DE2459562A1 (de) | 1975-07-03 |
| FR2255709A1 (enExample) | 1975-07-18 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE2459562B2 (de) | Integrierte Schaltungen | |
| DE2266040C2 (enExample) | ||
| DE2443171C2 (de) | Integrierte Schaltung | |
| DE2212168C2 (de) | Monolithisch integrierte Halbleiteranordnung | |
| DE2021824C3 (de) | Monolithische Halbleiterschaltung | |
| DE1439922B2 (de) | Schaltbares halbleiterbauelement mit einem pnpn oder einem npnp halbleiterkoerper | |
| DE1211334B (de) | Halbleiterbauelement mit eingelassenen Zonen | |
| DE2412699A1 (de) | Halbleiteranordnung | |
| DE1764274C3 (de) | Monolithisch integrierte Halbleiterstruktur zur Zuleitung von Versorgungsspannungen für nachträglich zu integrierende Halbleiterbauelemente und Verfahren zu ihrer Herstellung | |
| DE2932043A1 (de) | Feldgesteuerter thyristor und verfahren zu seiner herstellung | |
| DE1564218A1 (de) | Verfahren zur Herstellung von Transistoren | |
| DE2252148C3 (de) | Ladungsgekoppelte Halbleiteranordnung und Verfahren zu ihrem Betrieb | |
| DE2054863C3 (de) | Spannungsverstärker | |
| DE2556668A1 (de) | Halbleiter-speichervorrichtung | |
| DE2615553C3 (de) | Schwellenschaltung mit Hysterese | |
| DE2925894C2 (de) | Integrierte Bipolartransistor-Gatterschaltungsanordnung | |
| DE2614580C2 (de) | "I↑2↑L-Schaltung" | |
| DE2541887C3 (de) | Monolithisch integrierte Halbleiterschaltung mit einer I2 L- Konfiguration | |
| DE2753882A1 (de) | Struktur fuer digitale integrierte schaltungen | |
| DE2723973A1 (de) | Integrierte schaltung | |
| DE1207010B (de) | Flaechentransistor mit einem Halbleiterkoerper mit vier Zonen abwechselnd entgegengesetzten Leitungstyps, Verfahren zum Herstellen und Schaltung solcher Flaechentransistoren | |
| DE2756535A1 (de) | Vorrichtung zur kopplung in der i hoch 2 l-technik betriebener transistoren mit einem auf hoeheren ruhestrom eingestellten transistor | |
| DE2635800C2 (de) | Monolithisch integrierte Schottky-I↑2↑L-Gatterschaltung | |
| CH638341A5 (de) | Integrierte logische schaltung. | |
| DE2105475C3 (de) | Integrierte Halbleiterschaltung |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8230 | Patent withdrawn |