DE2456893A1 - Speicherelement - Google Patents

Speicherelement

Info

Publication number
DE2456893A1
DE2456893A1 DE19742456893 DE2456893A DE2456893A1 DE 2456893 A1 DE2456893 A1 DE 2456893A1 DE 19742456893 DE19742456893 DE 19742456893 DE 2456893 A DE2456893 A DE 2456893A DE 2456893 A1 DE2456893 A1 DE 2456893A1
Authority
DE
Germany
Prior art keywords
storage capacitor
transistor
mos transistor
selection switch
amplifier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE19742456893
Other languages
German (de)
English (en)
Other versions
DE2456893B2 (enExample
Inventor
Paul-Werner Von Dipl Ing Basse
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Corp filed Critical Siemens Corp
Priority to DE19742456893 priority Critical patent/DE2456893A1/de
Publication of DE2456893A1 publication Critical patent/DE2456893A1/de
Publication of DE2456893B2 publication Critical patent/DE2456893B2/de
Withdrawn legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
  • Semiconductor Memories (AREA)
  • Dram (AREA)
DE19742456893 1974-12-02 1974-12-02 Speicherelement Withdrawn DE2456893A1 (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DE19742456893 DE2456893A1 (de) 1974-12-02 1974-12-02 Speicherelement

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19742456893 DE2456893A1 (de) 1974-12-02 1974-12-02 Speicherelement

Publications (2)

Publication Number Publication Date
DE2456893A1 true DE2456893A1 (de) 1976-08-12
DE2456893B2 DE2456893B2 (enExample) 1980-03-06

Family

ID=5932260

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19742456893 Withdrawn DE2456893A1 (de) 1974-12-02 1974-12-02 Speicherelement

Country Status (1)

Country Link
DE (1) DE2456893A1 (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2396386A1 (fr) * 1977-06-30 1979-01-26 Ibm Circuits de cellule de memoire
EP0164100B1 (en) * 1984-06-06 1993-04-14 Polaroid Corporation Polymeric pyridinium ylide and products from same
AU714097B2 (en) * 1997-12-18 1999-12-16 Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel Ltd) Method of producing reduced iron pellets

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2396386A1 (fr) * 1977-06-30 1979-01-26 Ibm Circuits de cellule de memoire
US4168536A (en) * 1977-06-30 1979-09-18 International Business Machines Corporation Capacitor memory with an amplified cell signal
EP0164100B1 (en) * 1984-06-06 1993-04-14 Polaroid Corporation Polymeric pyridinium ylide and products from same
AU714097B2 (en) * 1997-12-18 1999-12-16 Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel Ltd) Method of producing reduced iron pellets
US6152983A (en) * 1997-12-18 2000-11-28 Kabushiki Kaisha Kobe Seiko Sho Method of producing reduced iron pellets
US6302938B1 (en) 1997-12-18 2001-10-16 Kabushiki Kaisha Kobe Seiko Sho Reduced pellets

Also Published As

Publication number Publication date
DE2456893B2 (enExample) 1980-03-06

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Legal Events

Date Code Title Description
OD Request for examination
8239 Disposal/non-payment of the annual fee