DE2448535C2 - Verfahren zum Niederschlagen dünner leitfähiger Filme auf einem anorganischen Substrat - Google Patents

Verfahren zum Niederschlagen dünner leitfähiger Filme auf einem anorganischen Substrat

Info

Publication number
DE2448535C2
DE2448535C2 DE2448535A DE2448535A DE2448535C2 DE 2448535 C2 DE2448535 C2 DE 2448535C2 DE 2448535 A DE2448535 A DE 2448535A DE 2448535 A DE2448535 A DE 2448535A DE 2448535 C2 DE2448535 C2 DE 2448535C2
Authority
DE
Germany
Prior art keywords
layer
photoresist
mask
metallic
openings
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE2448535A
Other languages
German (de)
English (en)
Other versions
DE2448535A1 (de
Inventor
Jack Richard Poughkeepsie N.Y. Franco
Janos Hopewell Junction N.Y. Havas
Harold A. Poughkeepsie N.Y. Levine
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of DE2448535A1 publication Critical patent/DE2448535A1/de
Application granted granted Critical
Publication of DE2448535C2 publication Critical patent/DE2448535C2/de
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/202—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials for lift-off processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/094—Multilayer resist systems, e.g. planarising layers
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
    • H05K3/04—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed mechanically, e.g. by punching
    • H05K3/046—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed mechanically, e.g. by punching by selective transfer or selective detachment of a conductive layer
    • H05K3/048—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed mechanically, e.g. by punching by selective transfer or selective detachment of a conductive layer using a lift-off resist pattern or a release layer pattern
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/68—Organic materials, e.g. photoresists
    • H10P14/683—Organic materials, e.g. photoresists carbon-based polymeric organic materials, e.g. polyimides, poly cyclobutene or PVC
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Materials Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Drying Of Semiconductors (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)
  • Weting (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
DE2448535A 1973-11-29 1974-10-11 Verfahren zum Niederschlagen dünner leitfähiger Filme auf einem anorganischen Substrat Expired DE2448535C2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US420034A US3873361A (en) 1973-11-29 1973-11-29 Method of depositing thin film utilizing a lift-off mask

Publications (2)

Publication Number Publication Date
DE2448535A1 DE2448535A1 (de) 1975-06-05
DE2448535C2 true DE2448535C2 (de) 1982-08-12

Family

ID=23664803

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2448535A Expired DE2448535C2 (de) 1973-11-29 1974-10-11 Verfahren zum Niederschlagen dünner leitfähiger Filme auf einem anorganischen Substrat

Country Status (7)

Country Link
US (1) US3873361A (ref)
JP (1) JPS5231714B2 (ref)
CA (1) CA1032396A (ref)
DE (1) DE2448535C2 (ref)
FR (1) FR2253278B1 (ref)
GB (1) GB1450508A (ref)
IT (1) IT1025189B (ref)

Families Citing this family (77)

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JPS5061124A (ref) * 1973-09-28 1975-05-26
US3982943A (en) * 1974-03-05 1976-09-28 Ibm Corporation Lift-off method of fabricating thin films and a structure utilizable as a lift-off mask
DE2432719B2 (de) * 1974-07-08 1977-06-02 Siemens AG, 1000 Berlin und 8000 München Verfahren zum erzeugen von feinen strukturen aus aufdampfbaren materialien auf einer unterlage und anwendung des verfahrens
NL7412383A (nl) * 1974-09-19 1976-03-23 Philips Nv Werkwijze voor het vervaardigen van een in- richting met een geleiderpatroon.
JPS5230851B2 (ref) * 1974-10-11 1977-08-11
JPS5738897B2 (ref) * 1974-11-19 1982-08-18
US4207105A (en) * 1975-01-27 1980-06-10 Fuji Photo Film Co., Ltd. Plasma-etching image in exposed AgX emulsion
JPS51105821A (en) * 1975-03-14 1976-09-20 Fuji Photo Film Co Ltd Masukugazono keiseihoho
US4004044A (en) * 1975-05-09 1977-01-18 International Business Machines Corporation Method for forming patterned films utilizing a transparent lift-off mask
FR2340620A1 (fr) * 1976-02-06 1977-09-02 Ibm Procede de fabrication d'un dispositif integre a grande echelle ayant une surface plane
US4035276A (en) * 1976-04-29 1977-07-12 Ibm Corporation Making coplanar layers of thin films
US4029562A (en) * 1976-04-29 1977-06-14 Ibm Corporation Forming feedthrough connections for multi-level interconnections metallurgy systems
US4040891A (en) * 1976-06-30 1977-08-09 Ibm Corporation Etching process utilizing the same positive photoresist layer for two etching steps
US4076575A (en) * 1976-06-30 1978-02-28 International Business Machines Corporation Integrated fabrication method of forming connectors through insulative layers
US4218532A (en) * 1977-10-13 1980-08-19 Bell Telephone Laboratories, Incorporated Photolithographic technique for depositing thin films
US4132586A (en) * 1977-12-20 1979-01-02 International Business Machines Corporation Selective dry etching of substrates
US4244799A (en) * 1978-09-11 1981-01-13 Bell Telephone Laboratories, Incorporated Fabrication of integrated circuits utilizing thick high-resolution patterns
US4181755A (en) * 1978-11-21 1980-01-01 Rca Corporation Thin film pattern generation by an inverse self-lifting technique
US4202914A (en) * 1978-12-29 1980-05-13 International Business Machines Corporation Method of depositing thin films of small dimensions utilizing silicon nitride lift-off mask
US4272561A (en) * 1979-05-29 1981-06-09 International Business Machines Corporation Hybrid process for SBD metallurgies
US4232059A (en) * 1979-06-06 1980-11-04 E-Systems, Inc. Process of defining film patterns on microelectronic substrates by air abrading
US4341850A (en) * 1979-07-19 1982-07-27 Hughes Aircraft Company Mask structure for forming semiconductor devices, comprising electron-sensitive resist patterns with controlled line profiles
US4283483A (en) * 1979-07-19 1981-08-11 Hughes Aircraft Company Process for forming semiconductor devices using electron-sensitive resist patterns with controlled line profiles
DE3068255D1 (en) * 1979-12-26 1984-07-19 Ibm Process for depositing a pattern of material on a substrate and use of this process for forming a patterned mask structure on a semiconductor substrate
US4307179A (en) * 1980-07-03 1981-12-22 International Business Machines Corporation Planar metal interconnection system and process
US4335506A (en) * 1980-08-04 1982-06-22 International Business Machines Corporation Method of forming aluminum/copper alloy conductors
US4346125A (en) * 1980-12-08 1982-08-24 Bell Telephone Laboratories, Incorporated Removing hardened organic materials during fabrication of integrated circuits using anhydrous hydrazine solvent
CA1200624A (en) * 1981-08-10 1986-02-11 Susumu Muramoto Method for the manufacture of semiconductor device using refractory metal in a lift-off step
US4362598A (en) * 1981-10-26 1982-12-07 General Electric Company Method of patterning a thick resist layer of polymeric plastic
US4396458A (en) * 1981-12-21 1983-08-02 International Business Machines Corporation Method for forming planar metal/insulator structures
US4428796A (en) 1982-08-02 1984-01-31 Fairchild Camera And Instrument Corporation Adhesion bond-breaking of lift-off regions on semiconductor structures
US4562091A (en) * 1982-12-23 1985-12-31 International Business Machines Corporation Use of plasma polymerized orgaosilicon films in fabrication of lift-off masks
US4493855A (en) * 1982-12-23 1985-01-15 International Business Machines Corporation Use of plasma polymerized organosilicon films in fabrication of lift-off masks
US4497684A (en) * 1983-02-22 1985-02-05 Amdahl Corporation Lift-off process for depositing metal on a substrate
US4606931A (en) * 1983-06-27 1986-08-19 International Business Machines Corporation Lift-off masking method
US4939071A (en) * 1984-03-06 1990-07-03 Harris Corporation Method for forming low resistance, sub-micrometer semiconductor gate structures
JPS60262150A (ja) * 1984-06-11 1985-12-25 Nippon Telegr & Teleph Corp <Ntt> 三層レジスト用中間層材料及びそれを用いた三層レジストパタン形成方法
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US4662989A (en) * 1985-10-04 1987-05-05 Honeywell Inc. High efficiency metal lift-off process
US4912018A (en) * 1986-02-24 1990-03-27 Hoechst Celanese Corporation High resolution photoresist based on imide containing polymers
US4689113A (en) * 1986-03-21 1987-08-25 International Business Machines Corporation Process for forming planar chip-level wiring
US5223914A (en) * 1989-04-28 1993-06-29 International Business Machines Corporation Follow-up system for etch process monitoring
EP0394597A1 (en) * 1989-04-28 1990-10-31 International Business Machines Corporation Follow-up System for Monitoring the Etching Process in an RIE Equipment and its Application to Producing High-resolution and Reproducible Patterns
US5234539A (en) * 1990-02-23 1993-08-10 France Telecom (C.N.E.T.) Mechanical lift-off process of a metal layer on a polymer
US5059500A (en) * 1990-10-10 1991-10-22 Polaroid Corporation Process for forming a color filter
US5140396A (en) * 1990-10-10 1992-08-18 Polaroid Corporation Filter and solid state imager incorporating this filter
JP2939946B2 (ja) * 1990-12-27 1999-08-25 ジェイエスアール株式会社 微細レジストパターンの形成方法
JPH05114577A (ja) * 1991-04-09 1993-05-07 Sgs Thomson Microelectron Inc 独特のエツチング形成したスロープを有するサブミクロンコンタクトの製造方法
US5227280A (en) * 1991-09-04 1993-07-13 International Business Machines Corporation Resists with enhanced sensitivity and contrast
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DE4303923A1 (de) * 1993-02-10 1994-08-11 Microparts Gmbh Verfahren zum Beseitigen von Kunststoffen aus Mikrostrukturen
US5426071A (en) * 1994-03-04 1995-06-20 E. I. Du Pont De Nemours And Company Polyimide copolymer film for lift-off metallization
US5667920A (en) * 1996-03-11 1997-09-16 Polaroid Corporation Process for preparing a color filter
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US6368400B1 (en) * 2000-07-17 2002-04-09 Honeywell International Absorbing compounds for spin-on-glass anti-reflective coatings for photolithography
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CN104878355B (zh) * 2015-04-30 2017-04-05 北京空间飞行器总体设计部 一种基于磁控溅射工艺的纳米介质层制备方法

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* Cited by examiner, † Cited by third party
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GB1230421A (ref) * 1967-09-15 1971-05-05
US3849136A (en) * 1973-07-31 1974-11-19 Ibm Masking of deposited thin films by use of a masking layer photoresist composite

Also Published As

Publication number Publication date
DE2448535A1 (de) 1975-06-05
JPS5231714B2 (ref) 1977-08-16
FR2253278A1 (ref) 1975-06-27
JPS5086984A (ref) 1975-07-12
GB1450508A (en) 1976-09-22
US3873361A (en) 1975-03-25
FR2253278B1 (ref) 1979-06-01
IT1025189B (it) 1978-08-10
CA1032396A (en) 1978-06-06

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OD Request for examination
D2 Grant after examination
8339 Ceased/non-payment of the annual fee