DE2439726A1 - Ladungskopplungs-halbleiteranordnung - Google Patents
Ladungskopplungs-halbleiteranordnungInfo
- Publication number
- DE2439726A1 DE2439726A1 DE2439726A DE2439726A DE2439726A1 DE 2439726 A1 DE2439726 A1 DE 2439726A1 DE 2439726 A DE2439726 A DE 2439726A DE 2439726 A DE2439726 A DE 2439726A DE 2439726 A1 DE2439726 A1 DE 2439726A1
- Authority
- DE
- Germany
- Prior art keywords
- electrodes
- gate electrodes
- layer
- charge coupling
- insulating layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 96
- 230000008878 coupling Effects 0.000 title claims description 30
- 238000010168 coupling process Methods 0.000 title claims description 30
- 238000005859 coupling reaction Methods 0.000 title claims description 30
- 238000000034 method Methods 0.000 claims description 33
- 239000011810 insulating material Substances 0.000 claims description 23
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 17
- 230000003647 oxidation Effects 0.000 claims description 10
- 238000007254 oxidation reaction Methods 0.000 claims description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 7
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 5
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 230000008569 process Effects 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims 4
- 239000002184 metal Substances 0.000 claims 4
- 239000000377 silicon dioxide Substances 0.000 claims 2
- 235000012239 silicon dioxide Nutrition 0.000 claims 1
- 239000000463 material Substances 0.000 description 59
- 229920002120 photoresistant polymer Polymers 0.000 description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 13
- 229910052710 silicon Inorganic materials 0.000 description 13
- 239000010703 silicon Substances 0.000 description 13
- 210000004027 cell Anatomy 0.000 description 10
- 239000002800 charge carrier Substances 0.000 description 9
- 238000003384 imaging method Methods 0.000 description 5
- 239000012535 impurity Substances 0.000 description 5
- 239000002210 silicon-based material Substances 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 230000000903 blocking effect Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 239000000356 contaminant Substances 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- 229910000077 silane Inorganic materials 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 238000003491 array Methods 0.000 description 2
- 230000000712 assembly Effects 0.000 description 2
- 238000000429 assembly Methods 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 230000002452 interceptive effect Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 210000004460 N cell Anatomy 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 238000013507 mapping Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D44/00—Charge transfer devices
- H10D44/40—Charge-coupled devices [CCD]
- H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D44/00—Charge transfer devices
- H10D44/40—Charge-coupled devices [CCD]
- H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes
- H10D44/462—Buried-channel CCD
- H10D44/468—Four-phase CCD
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US39189773A | 1973-08-27 | 1973-08-27 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE2439726A1 true DE2439726A1 (de) | 1975-03-13 |
Family
ID=23548414
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE2439726A Pending DE2439726A1 (de) | 1973-08-27 | 1974-08-19 | Ladungskopplungs-halbleiteranordnung |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JPS5051677A (enrdf_load_stackoverflow) |
| AU (1) | AU7269774A (enrdf_load_stackoverflow) |
| DE (1) | DE2439726A1 (enrdf_load_stackoverflow) |
| FR (1) | FR2242778A1 (enrdf_load_stackoverflow) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL8501338A (nl) * | 1985-05-10 | 1986-12-01 | Philips Nv | Ladingsgekoppelde halfgeleiderinrichting en werkwijze ter vervaardiging daarvan. |
-
1974
- 1974-08-19 DE DE2439726A patent/DE2439726A1/de active Pending
- 1974-08-23 FR FR7428984A patent/FR2242778A1/fr not_active Withdrawn
- 1974-08-26 AU AU72697/74A patent/AU7269774A/en not_active Expired
- 1974-08-27 JP JP49098296A patent/JPS5051677A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| FR2242778A1 (en) | 1975-03-28 |
| AU7269774A (en) | 1976-02-26 |
| JPS5051677A (enrdf_load_stackoverflow) | 1975-05-08 |
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