DE2424222A1 - Halbleiterstruktur mit schutzschicht - Google Patents

Halbleiterstruktur mit schutzschicht

Info

Publication number
DE2424222A1
DE2424222A1 DE2424222A DE2424222A DE2424222A1 DE 2424222 A1 DE2424222 A1 DE 2424222A1 DE 2424222 A DE2424222 A DE 2424222A DE 2424222 A DE2424222 A DE 2424222A DE 2424222 A1 DE2424222 A1 DE 2424222A1
Authority
DE
Germany
Prior art keywords
layer
substrate
structure according
junction
polycrystalline
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
DE2424222A
Other languages
German (de)
English (en)
Inventor
Hisao Hayashi
Yoshiyuki Kawana
Takeshi Matsushita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of DE2424222A1 publication Critical patent/DE2424222A1/de
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/118—Electrodes comprising insulating layers having particular dielectric or electrostatic properties, e.g. having static charges
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/043—Dual dielectric
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/118—Oxide films
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/122—Polycrystalline
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/125—Polycrystalline passivation

Landscapes

  • Bipolar Transistors (AREA)
DE2424222A 1973-05-19 1974-05-17 Halbleiterstruktur mit schutzschicht Ceased DE2424222A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP48055965A JPS523277B2 (OSRAM) 1973-05-19 1973-05-19

Publications (1)

Publication Number Publication Date
DE2424222A1 true DE2424222A1 (de) 1974-12-05

Family

ID=13013779

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2424222A Ceased DE2424222A1 (de) 1973-05-19 1974-05-17 Halbleiterstruktur mit schutzschicht

Country Status (8)

Country Link
US (1) US3971061A (OSRAM)
JP (1) JPS523277B2 (OSRAM)
CA (1) CA999683A (OSRAM)
DE (1) DE2424222A1 (OSRAM)
FR (1) FR2230081B1 (OSRAM)
GB (1) GB1450494A (OSRAM)
IT (1) IT1012612B (OSRAM)
NL (1) NL7406776A (OSRAM)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2618733A1 (de) * 1975-04-30 1976-11-11 Sony Corp Halbleiterbauelement mit heterouebergang
DE3038402A1 (de) * 1979-10-18 1981-04-30 Tokyo Shibaura Denki K.K., Kawasaki, Kanagawa Halbleitervorrichtung

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4176372A (en) * 1974-03-30 1979-11-27 Sony Corporation Semiconductor device having oxygen doped polycrystalline passivation layer
JPS5534582B2 (OSRAM) * 1974-06-24 1980-09-08
JPS5193874A (en) * 1975-02-15 1976-08-17 Handotaisochino seizohoho
FR2335951A1 (fr) * 1975-12-19 1977-07-15 Radiotechnique Compelec Dispositif semiconducteur a surface passivee et procede d'obtention de la structure de passivation
SU793421A3 (ru) * 1976-06-02 1980-12-30 Ббц Аг Браун Фототиристор
CH594989A5 (OSRAM) * 1976-09-03 1978-01-31 Bbc Brown Boveri & Cie
JPS53134884A (en) * 1977-04-30 1978-11-24 Toyoda Gosei Kk Method for making elastic ring
US4194934A (en) * 1977-05-23 1980-03-25 Varo Semiconductor, Inc. Method of passivating a semiconductor device utilizing dual polycrystalline layers
US4134125A (en) * 1977-07-20 1979-01-09 Bell Telephone Laboratories, Incorporated Passivation of metallized semiconductor substrates
US4742384A (en) * 1978-02-01 1988-05-03 Rca Corporation Structure for passivating a PN junction
US4473597A (en) * 1978-02-01 1984-09-25 Rca Corporation Method and structure for passivating a PN junction
US4374389A (en) * 1978-06-06 1983-02-15 General Electric Company High breakdown voltage semiconductor device
US4242690A (en) * 1978-06-06 1980-12-30 General Electric Company High breakdown voltage semiconductor device
JPS5551541A (en) * 1978-10-06 1980-04-15 Takagi Kakoushiyo:Kk Method for manufacturing rhombic belt and apparatus therefor
DE2846637A1 (de) * 1978-10-11 1980-04-30 Bbc Brown Boveri & Cie Halbleiterbauelement mit mindestens einem planaren pn-uebergang und zonen- guard-ringen
US4199384A (en) * 1979-01-29 1980-04-22 Rca Corporation Method of making a planar semiconductor on insulating substrate device utilizing the deposition of a dual dielectric layer between device islands
FR2450505A1 (fr) * 1979-03-02 1980-09-26 Thomson Csf Dispositif semiconducteur, comportant un anneau de garde diffuse et son procede de fabrication
JPS6011815B2 (ja) * 1979-07-09 1985-03-28 三菱電機株式会社 サイリスタ
US4297149A (en) * 1980-05-05 1981-10-27 Rca Corporation Method of treating SiPOS passivated high voltage semiconductor device
US4344985A (en) * 1981-03-27 1982-08-17 Rca Corporation Method of passivating a semiconductor device with a multi-layer passivant system by thermally growing a layer of oxide on an oxygen doped polycrystalline silicon layer
JPS5976466A (ja) * 1982-10-25 1984-05-01 Mitsubishi Electric Corp プレ−ナ形半導体装置
GB2131603B (en) * 1982-12-03 1985-12-18 Philips Electronic Associated Semiconductor devices
GB2134705B (en) * 1983-01-28 1985-12-24 Philips Electronic Associated Semiconductor devices
NL8401983A (nl) * 1984-06-22 1986-01-16 Philips Nv Halfgeleiderinrichting met verhoogde doorslagspanning.
US4605948A (en) * 1984-08-02 1986-08-12 Rca Corporation Semiconductor structure for electric field distribution
GB2167229B (en) * 1984-11-21 1988-07-20 Philips Electronic Associated Semiconductor devices
JPS61222172A (ja) * 1985-03-15 1986-10-02 Sharp Corp Ｍｏｓｆｅｔのゲ−ト絶縁膜形成方法
FR2581252B1 (fr) * 1985-04-26 1988-06-10 Radiotechnique Compelec Composant semiconducteur du type planar a structure d'anneaux de garde, famille de tels composants et procede de realisation
JPS6276673A (ja) * 1985-09-30 1987-04-08 Toshiba Corp 高耐圧半導体装置
EP0360036B1 (de) * 1988-09-20 1994-06-01 Siemens Aktiengesellschaft Planarer pn-Übergang hoher Spannungsfestigkeit
JPH11204304A (ja) * 1998-01-08 1999-07-30 Matsushita Electric Ind Co Ltd 抵抗器およびその製造方法
GB2354879B (en) * 1999-08-11 2004-05-12 Mitel Semiconductor Ltd A semiconductor device
KR100462878B1 (ko) * 2002-03-22 2004-12-17 삼성전자주식회사 길이가 긴 부하저항을 구비한 반도체 장치 및 그의 제조방법
US9812454B2 (en) * 2016-02-08 2017-11-07 Kilopass Technology, Inc. Methods and systems for reducing electrical disturb effects between thyristor memory cells using buried metal cathode lines

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1294558B (de) * 1961-06-07 1969-05-08 Westinghouse Electric Corp Hochspannungsgleichrichter und Verfahren zum Herstellen
US3391287A (en) * 1965-07-30 1968-07-02 Westinghouse Electric Corp Guard junctions for p-nu junction semiconductor devices
US3710204A (en) * 1967-05-20 1973-01-09 Telefunken Patent A semiconductor device having a screen electrode of intrinsic semiconductor material
DE1789043A1 (de) * 1967-10-14 1972-01-05 Sgs Sa Mit Schutzringen versehene Planar-Halbleitervorrichtungen
US3911473A (en) * 1968-10-12 1975-10-07 Philips Corp Improved surface breakdown protection for semiconductor devices
US3738880A (en) * 1971-06-23 1973-06-12 Rca Corp Method of making a semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2618733A1 (de) * 1975-04-30 1976-11-11 Sony Corp Halbleiterbauelement mit heterouebergang
DE3038402A1 (de) * 1979-10-18 1981-04-30 Tokyo Shibaura Denki K.K., Kawasaki, Kanagawa Halbleitervorrichtung

Also Published As

Publication number Publication date
JPS508478A (OSRAM) 1975-01-28
JPS523277B2 (OSRAM) 1977-01-27
NL7406776A (OSRAM) 1974-11-21
US3971061A (en) 1976-07-20
GB1450494A (en) 1976-09-22
FR2230081A1 (OSRAM) 1974-12-13
IT1012612B (it) 1977-03-10
FR2230081B1 (OSRAM) 1977-10-07
CA999683A (en) 1976-11-09

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Legal Events

Date Code Title Description
OD Request for examination
8131 Rejection