DE2360030C3 - Verfahren zum Herstellen einer Schottky-Diode - Google Patents
Verfahren zum Herstellen einer Schottky-DiodeInfo
- Publication number
- DE2360030C3 DE2360030C3 DE2360030A DE2360030A DE2360030C3 DE 2360030 C3 DE2360030 C3 DE 2360030C3 DE 2360030 A DE2360030 A DE 2360030A DE 2360030 A DE2360030 A DE 2360030A DE 2360030 C3 DE2360030 C3 DE 2360030C3
- Authority
- DE
- Germany
- Prior art keywords
- solution
- silicon
- layer
- platinum
- iridium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 34
- 239000002184 metal Substances 0.000 claims description 34
- 229910052710 silicon Inorganic materials 0.000 claims description 32
- 239000010703 silicon Substances 0.000 claims description 32
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 31
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 24
- 238000000034 method Methods 0.000 claims description 23
- 229910021332 silicide Inorganic materials 0.000 claims description 22
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 22
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical group [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 16
- 229910052741 iridium Inorganic materials 0.000 claims description 15
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims description 15
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 11
- 229910000041 hydrogen chloride Inorganic materials 0.000 claims description 8
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 claims description 8
- 229910052762 osmium Inorganic materials 0.000 claims description 7
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 claims description 7
- 150000003839 salts Chemical class 0.000 claims description 7
- -1 chlorine ions Chemical class 0.000 claims description 4
- 239000002253 acid Substances 0.000 claims description 3
- 150000002739 metals Chemical class 0.000 claims description 3
- 229910000040 hydrogen fluoride Inorganic materials 0.000 claims 4
- YZCKVEUIGOORGS-IGMARMGPSA-N Protium Chemical compound [1H] YZCKVEUIGOORGS-IGMARMGPSA-N 0.000 claims 2
- MDJVODDRJLDEIG-UHFFFAOYSA-N F.[Pt] Chemical compound F.[Pt] MDJVODDRJLDEIG-UHFFFAOYSA-N 0.000 claims 1
- 239000000460 chlorine Substances 0.000 claims 1
- 229910052801 chlorine Inorganic materials 0.000 claims 1
- 150000002500 ions Chemical class 0.000 claims 1
- 239000000203 mixture Substances 0.000 claims 1
- IHUHXSNGMLUYES-UHFFFAOYSA-J osmium(iv) chloride Chemical compound Cl[Os](Cl)(Cl)Cl IHUHXSNGMLUYES-UHFFFAOYSA-J 0.000 claims 1
- CLSUSRZJUQMOHH-UHFFFAOYSA-L platinum dichloride Chemical compound Cl[Pt]Cl CLSUSRZJUQMOHH-UHFFFAOYSA-L 0.000 claims 1
- 230000004888 barrier function Effects 0.000 description 17
- 239000000243 solution Substances 0.000 description 14
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 11
- 229910052697 platinum Inorganic materials 0.000 description 7
- ZXEYZECDXFPJRJ-UHFFFAOYSA-N $l^{3}-silane;platinum Chemical compound [SiH3].[Pt] ZXEYZECDXFPJRJ-UHFFFAOYSA-N 0.000 description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 229910021339 platinum silicide Inorganic materials 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 235000019441 ethanol Nutrition 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 238000007654 immersion Methods 0.000 description 2
- 150000002907 osmium Chemical class 0.000 description 2
- 239000012266 salt solution Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 101100478173 Drosophila melanogaster spen gene Proteins 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 101100513476 Mus musculus Spen gene Proteins 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- QZPSXPBJTPJTSZ-UHFFFAOYSA-N aqua regia Chemical compound Cl.O[N+]([O-])=O QZPSXPBJTPJTSZ-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000012153 distilled water Substances 0.000 description 1
- 238000002003 electron diffraction Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910000039 hydrogen halide Inorganic materials 0.000 description 1
- 239000012433 hydrogen halide Substances 0.000 description 1
- 150000002503 iridium Chemical class 0.000 description 1
- 210000003127 knee Anatomy 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 150000003057 platinum Chemical class 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 239000004810 polytetrafluoroethylene Substances 0.000 description 1
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/974—Substrate surface preparation
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Electrodes Of Semiconductors (AREA)
- Electron Beam Exposure (AREA)
- Silicon Compounds (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US00314002A US3841904A (en) | 1972-12-11 | 1972-12-11 | Method of making a metal silicide-silicon schottky barrier |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| DE2360030A1 DE2360030A1 (de) | 1974-06-20 |
| DE2360030B2 DE2360030B2 (de) | 1978-08-03 |
| DE2360030C3 true DE2360030C3 (de) | 1979-04-05 |
Family
ID=23218106
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE2360030A Expired DE2360030C3 (de) | 1972-12-11 | 1973-12-01 | Verfahren zum Herstellen einer Schottky-Diode |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US3841904A (forum.php) |
| JP (1) | JPS4997000A (forum.php) |
| CA (1) | CA990415A (forum.php) |
| DE (1) | DE2360030C3 (forum.php) |
| FR (1) | FR2210014B1 (forum.php) |
| GB (1) | GB1411830A (forum.php) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4110488A (en) * | 1976-04-09 | 1978-08-29 | Rca Corporation | Method for making schottky barrier diodes |
| US4052253A (en) * | 1976-09-27 | 1977-10-04 | Motorola, Inc. | Semiconductor-oxide etchant |
| DE2658124C3 (de) * | 1976-12-22 | 1982-05-06 | Dynamit Nobel Ag, 5210 Troisdorf | Verfahren zur Herstellung von Elektroschmelzkorund |
| US4412376A (en) * | 1979-03-30 | 1983-11-01 | Ibm Corporation | Fabrication method for vertical PNP structure with Schottky barrier diode emitter utilizing ion implantation |
| US4675713A (en) * | 1982-05-10 | 1987-06-23 | Motorola, Inc. | MOS transistor |
| US4816879A (en) * | 1982-12-08 | 1989-03-28 | North American Philips Corporation, Signetics Division | Schottky-type rectifier having controllable barrier height |
| US4687537A (en) * | 1986-04-15 | 1987-08-18 | Rca Corporation | Epitaxial metal silicide layers |
| US4914042A (en) * | 1986-09-30 | 1990-04-03 | Colorado State University Research Foundation | Forming a transition metal silicide radiation detector and source |
| US5804034A (en) * | 1994-03-21 | 1998-09-08 | Texas Instruments Incorporated | Method for manufacturing semiconductor device |
| US7002197B2 (en) * | 2004-01-23 | 2006-02-21 | Hewlett-Packard Development Company, L.P. | Cross point resistive memory array |
| CA2702851A1 (en) * | 2007-09-10 | 2009-03-19 | University Of Florida Research Foundation, Inc. | Nanotube enabled, gate-voltage controlled light emitting diodes |
| WO2014071343A1 (en) | 2012-11-05 | 2014-05-08 | University Of Florida Research Foundation, Inc. | Brightness compensation in a display |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3397450A (en) * | 1964-01-31 | 1968-08-20 | Fairchild Camera Instr Co | Method of forming a metal rectifying contact to semiconductor material by displacement plating |
| FR1481605A (fr) * | 1965-06-02 | 1967-05-19 | Texas Instruments Inc | Procédé de fabrication de contacts ohmiques sur des composants semi-conducteurs |
| GB1172230A (en) * | 1965-12-16 | 1969-11-26 | Matsushita Electronics Corp | A Method of Manufacturing Semiconductor Device |
| US3476984A (en) * | 1966-11-10 | 1969-11-04 | Solitron Devices | Schottky barrier semiconductor device |
| JPS4826188B1 (forum.php) * | 1968-10-04 | 1973-08-07 | ||
| US3642526A (en) * | 1969-03-06 | 1972-02-15 | Hitachi Ltd | Semiconductor surface barrier diode of schottky type and method of making same |
| US3669730A (en) * | 1970-04-24 | 1972-06-13 | Bell Telephone Labor Inc | Modifying barrier layer devices |
| US3742317A (en) * | 1970-09-02 | 1973-06-26 | Instr Inc | Schottky barrier diode |
-
1972
- 1972-12-11 US US00314002A patent/US3841904A/en not_active Expired - Lifetime
-
1973
- 1973-11-23 CA CA186,609A patent/CA990415A/en not_active Expired
- 1973-12-01 DE DE2360030A patent/DE2360030C3/de not_active Expired
- 1973-12-04 GB GB5609873A patent/GB1411830A/en not_active Expired
- 1973-12-06 JP JP48138565A patent/JPS4997000A/ja active Pending
- 1973-12-10 FR FR7344031A patent/FR2210014B1/fr not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS4997000A (forum.php) | 1974-09-13 |
| FR2210014A1 (forum.php) | 1974-07-05 |
| DE2360030A1 (de) | 1974-06-20 |
| US3841904A (en) | 1974-10-15 |
| CA990415A (en) | 1976-06-01 |
| GB1411830A (en) | 1975-10-29 |
| DE2360030B2 (de) | 1978-08-03 |
| FR2210014B1 (forum.php) | 1978-11-10 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE2640525C2 (de) | Verfahren zur Herstellung einer MIS-Halbleiterschaltungsanordnung | |
| EP0012955B1 (de) | Ätzmittel zum Ätzen von Siliciumoxiden auf einer Unterlage und Ätzverfahren | |
| DE2360030C3 (de) | Verfahren zum Herstellen einer Schottky-Diode | |
| DE69635299T2 (de) | Herstellungsverfahren von Schottky Elektroden auf Halbleitervorrichtungen | |
| DE2031333C3 (de) | Verfahren zum Herstellen eines Halbleiterbauelementes | |
| DE1539087A1 (de) | Halbleiterbauelement mit Oberflaechensperrschicht | |
| DE2123595A1 (de) | Halbleiteranordnung | |
| DE2654476C3 (de) | Verfahren zur Herstellung einer Schottky-Sperrschicht | |
| DE2517252A1 (de) | Halbleiterelement | |
| DE1614995B1 (de) | Verfahren zum Herstellen von Aluminiumkontakten an planaren Halbleiteranordnungen | |
| DE1521604B2 (de) | Verfahren zum aufbringen eines nickelueberzugs auf einem ausgewaehlten oberflaechenbereich einer siliciumscheibe | |
| DE2602705A1 (de) | Elektronenroehre mit einer photokathode, photokathode fuer eine solche roehre und verfahren zur herstellung einer derartigen roehre | |
| DE69215956T2 (de) | Verfahren zum Herstellen eines Kontakts auf einem Halbleiterbauelement | |
| DE3022726A1 (de) | Schichtanordnung zur passivierung, die ueber dem ort einer maske von selbst ausgerichtet ist, und verfahren zum erzeugen derselben | |
| DE1952499A1 (de) | Verfahren zum Herstellen eines Halbleiterbauelements | |
| DE2734072A1 (de) | Verfahren zur herstellung von schottky-dioden mit gold-silicium- sperrschicht | |
| DE69304130T2 (de) | Verfahren zur Abscheidung eines ohmischen Kontaktes auf einer ZnSe-Schicht | |
| DE1614140A1 (de) | Verfahren zum Herstellen von Halbleiterbauelementen | |
| DE2540301C2 (de) | Verfahren zur Herstellung einer Halbleiteranordnung mit einem Leitermuster | |
| DE2239145A1 (de) | Verfahren zur behandlung von halbleitermaterialien aus iii-v-verbindungen | |
| DE2057204C3 (de) | Verfahren zur Herstellung von Metall-Halbleiterkontakten | |
| DE2216032A1 (de) | Schottky-Sperrschichtdiode und Verfahren zu deren Herstellung | |
| DE2646405A1 (de) | Sperrschicht-feldeffekt-element | |
| DE3145008C2 (forum.php) | ||
| DE1079744B (de) | Verfahren zur Herstellung von Selen-Trockengleichrichtern |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C3 | Grant after two publication steps (3rd publication) | ||
| EHJ | Ceased/non-payment of the annual fee |