DE2356442A1 - Verfahren zur herstellung von stabilem kaliumnitrat der phase iii sowie daraus hergestellter gegenstaende - Google Patents
Verfahren zur herstellung von stabilem kaliumnitrat der phase iii sowie daraus hergestellter gegenstaendeInfo
- Publication number
- DE2356442A1 DE2356442A1 DE2356442A DE2356442A DE2356442A1 DE 2356442 A1 DE2356442 A1 DE 2356442A1 DE 2356442 A DE2356442 A DE 2356442A DE 2356442 A DE2356442 A DE 2356442A DE 2356442 A1 DE2356442 A1 DE 2356442A1
- Authority
- DE
- Germany
- Prior art keywords
- potassium nitrate
- layer
- phase iii
- temperature
- electrical contact
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- FGIUAXJPYTZDNR-UHFFFAOYSA-N potassium nitrate Chemical compound [K+].[O-][N+]([O-])=O FGIUAXJPYTZDNR-UHFFFAOYSA-N 0.000 title claims description 120
- 235000010333 potassium nitrate Nutrition 0.000 title claims description 60
- 239000004323 potassium nitrate Substances 0.000 title claims description 60
- 238000000034 method Methods 0.000 title claims description 22
- 238000004519 manufacturing process Methods 0.000 title claims description 19
- 239000010409 thin film Substances 0.000 claims description 24
- 238000000151 deposition Methods 0.000 claims description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 4
- 239000000155 melt Substances 0.000 claims description 4
- 230000008018 melting Effects 0.000 claims description 4
- 238000002844 melting Methods 0.000 claims description 4
- 238000010791 quenching Methods 0.000 claims description 3
- 230000000171 quenching effect Effects 0.000 claims description 3
- 239000003153 chemical reaction reagent Substances 0.000 claims description 2
- 229910052757 nitrogen Inorganic materials 0.000 claims description 2
- 239000000843 powder Substances 0.000 claims description 2
- 239000007789 gas Substances 0.000 claims 1
- 239000007788 liquid Substances 0.000 claims 1
- 239000000758 substrate Substances 0.000 description 11
- 230000003287 optical effect Effects 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 239000010408 film Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 230000008021 deposition Effects 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- 230000010287 polarization Effects 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229920001220 nitrocellulos Polymers 0.000 description 2
- 230000006911 nucleation Effects 0.000 description 2
- 238000010899 nucleation Methods 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- DUPIXUINLCPYLU-UHFFFAOYSA-N barium lead Chemical compound [Ba].[Pb] DUPIXUINLCPYLU-UHFFFAOYSA-N 0.000 description 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- 229910002056 binary alloy Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000001446 dark-field microscopy Methods 0.000 description 1
- CAEFTTNJCFXOSS-UHFFFAOYSA-N dioxosilane;silver Chemical compound [Ag].O=[Si]=O CAEFTTNJCFXOSS-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G7/00—Capacitors in which the capacitance is varied by non-mechanical means; Processes of their manufacture
- H01G7/02—Electrets, i.e. having a permanently-polarised dielectric
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G7/00—Capacitors in which the capacitance is varied by non-mechanical means; Processes of their manufacture
- H01G7/02—Electrets, i.e. having a permanently-polarised dielectric
- H01G7/025—Electrets, i.e. having a permanently-polarised dielectric having an inorganic dielectric
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Inorganic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Insulating Materials (AREA)
- Physical Vapour Deposition (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US7605970A | 1970-09-28 | 1970-09-28 | |
| US05/316,417 US3939292A (en) | 1970-09-28 | 1972-12-18 | Process for stable phase III potassium nitrate and articles prepared therefrom |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE2356442A1 true DE2356442A1 (de) | 1974-06-20 |
Family
ID=26757611
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE2356442A Withdrawn DE2356442A1 (de) | 1970-09-28 | 1973-11-12 | Verfahren zur herstellung von stabilem kaliumnitrat der phase iii sowie daraus hergestellter gegenstaende |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US3939292A (enExample) |
| DE (1) | DE2356442A1 (enExample) |
| FR (1) | FR2210572B2 (enExample) |
| NL (1) | NL7317279A (enExample) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5214300A (en) * | 1970-09-28 | 1993-05-25 | Ramtron Corporation | Monolithic semiconductor integrated circuit ferroelectric memory device |
| US4195355A (en) * | 1970-09-28 | 1980-03-25 | Technovation, Inc. | Process for manufacturing a ferroelectric device and devices manufactured thereby |
| US5024964A (en) * | 1970-09-28 | 1991-06-18 | Ramtron Corporation | Method of making ferroelectric memory devices |
| US4713157A (en) * | 1976-02-17 | 1987-12-15 | Ramtron Corporation | Combined integrated circuit/ferroelectric memory device, and ion beam methods of constructing same |
| FR2341929A2 (fr) * | 1977-02-09 | 1977-09-16 | Technovation | Dispositif ferroelectrique et sa methode de fabrication |
| US4149301A (en) * | 1977-07-25 | 1979-04-17 | Ferrosil Corporation | Monolithic semiconductor integrated circuit-ferroelectric memory drive |
| AU588856B2 (en) * | 1985-01-29 | 1989-09-28 | Ramtron International Corporation | Method of making an integrated ferroelectric device, and device produced thereby |
| US5063539A (en) * | 1988-10-31 | 1991-11-05 | Raytheon Company | Ferroelectric memory with diode isolation |
| US5273927A (en) * | 1990-12-03 | 1993-12-28 | Micron Technology, Inc. | Method of making a ferroelectric capacitor and forming local interconnect |
| US5926412A (en) * | 1992-02-09 | 1999-07-20 | Raytheon Company | Ferroelectric memory structure |
| US6791131B1 (en) * | 1993-04-02 | 2004-09-14 | Micron Technology, Inc. | Method for forming a storage cell capacitor compatible with high dielectric constant materials |
| US5392189A (en) | 1993-04-02 | 1995-02-21 | Micron Semiconductor, Inc. | Capacitor compatible with high dielectric constant materials having two independent insulative layers and the method for forming same |
| US5784310A (en) * | 1997-03-03 | 1998-07-21 | Symetrix Corporation | Low imprint ferroelectric material for long retention memory and method of making the same |
| US6265738B1 (en) | 1997-03-03 | 2001-07-24 | Matsushita Electronics Corporation | Thin film ferroelectric capacitors having improved memory retention through the use of essentially smooth bottom electrode structures |
| USRE38565E1 (en) * | 1997-03-03 | 2004-08-17 | Matsushita Electric Industrial Co., Ltd. | Thin film ferroelectric capacitors having improved memory retention through the use of essentially smooth bottom electrode structures |
| CN103539167B (zh) * | 2012-07-09 | 2015-07-15 | 虎尾科技大学 | 自玻璃硬化制程所产生的废弃物中连续批次纯化硝酸钾的方法 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2922730A (en) * | 1956-06-07 | 1960-01-26 | Feldman Charles | Method of forming thin films of barium titanate |
| US3405440A (en) * | 1963-09-26 | 1968-10-15 | Gen Motors Corp | Ferroelectric material and method of making it |
-
1972
- 1972-12-18 US US05/316,417 patent/US3939292A/en not_active Expired - Lifetime
-
1973
- 1973-11-12 DE DE2356442A patent/DE2356442A1/de not_active Withdrawn
- 1973-12-17 NL NL7317279A patent/NL7317279A/xx unknown
- 1973-12-18 FR FR7346423A patent/FR2210572B2/fr not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| FR2210572A2 (enExample) | 1974-07-12 |
| NL7317279A (enExample) | 1974-06-20 |
| FR2210572B2 (enExample) | 1978-02-10 |
| US3939292A (en) | 1976-02-17 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8141 | Disposal/no request for examination |