DE69224956T2 - Film aus "cluster"-artigem Kohlenstoff mit einer elektrischen Leitfähigkeit und Verfahren zu seiner Herstellung - Google Patents
Film aus "cluster"-artigem Kohlenstoff mit einer elektrischen Leitfähigkeit und Verfahren zu seiner HerstellungInfo
- Publication number
- DE69224956T2 DE69224956T2 DE69224956T DE69224956T DE69224956T2 DE 69224956 T2 DE69224956 T2 DE 69224956T2 DE 69224956 T DE69224956 T DE 69224956T DE 69224956 T DE69224956 T DE 69224956T DE 69224956 T2 DE69224956 T2 DE 69224956T2
- Authority
- DE
- Germany
- Prior art keywords
- cluster
- production
- electrical conductivity
- film made
- type carbon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0605—Carbon
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/002—Controlling or regulating
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/20—Doping by irradiation with electromagnetic waves or by particle radiation
- C30B31/22—Doping by irradiation with electromagnetic waves or by particle radiation by ion-implantation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S423/00—Chemistry of inorganic compounds
- Y10S423/39—Fullerene, e.g. c60, c70 derivative and related process
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S423/00—Chemistry of inorganic compounds
- Y10S423/40—Fullerene composition
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/30—Self-sustaining carbon mass or layer with impregnant or other layer
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Mechanical Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Composite Materials (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electromagnetism (AREA)
- Physical Vapour Deposition (AREA)
- Carbon And Carbon Compounds (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP27979491 | 1991-10-25 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69224956D1 DE69224956D1 (de) | 1998-05-07 |
DE69224956T2 true DE69224956T2 (de) | 1998-12-10 |
Family
ID=17616004
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69224956T Expired - Fee Related DE69224956T2 (de) | 1991-10-25 | 1992-10-20 | Film aus "cluster"-artigem Kohlenstoff mit einer elektrischen Leitfähigkeit und Verfahren zu seiner Herstellung |
Country Status (3)
Country | Link |
---|---|
US (1) | US5380595A (de) |
EP (1) | EP0538797B1 (de) |
DE (1) | DE69224956T2 (de) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5698497A (en) * | 1991-03-18 | 1997-12-16 | Lucent Technologies Inc. | Superconductivity in carbonaceous compounds and devices using such compounds |
EP0570720A1 (de) * | 1992-05-20 | 1993-11-24 | Sumitomo Electric Industries, Ltd. | Leitendes oder superleitendes stabilisiertes Kohlenstoff-Cluster-Material sowie Herstellung und Verwendung |
JP3336682B2 (ja) * | 1992-07-02 | 2002-10-21 | 住友電気工業株式会社 | 硬質炭素膜 |
US5558903A (en) * | 1993-06-10 | 1996-09-24 | The Ohio State University | Method for coating fullerene materials for tribology |
DE4344764A1 (de) * | 1993-12-28 | 1995-06-29 | Abb Research Ltd | Hochspannungsanlage |
US5393572A (en) * | 1994-07-11 | 1995-02-28 | Southwest Research Institute | Ion beam assisted method of producing a diamond like carbon coating |
EP0781355B1 (de) * | 1995-07-24 | 2001-09-19 | International Business Machines Corporation | Epitaxie-schichtstruktur |
ATE186334T1 (de) * | 1996-03-14 | 1999-11-15 | Forschungsverbund Berlin Ev | Verfahren zur herstellung endohedraler fullerene oder fullerenderivate |
US5876790A (en) * | 1996-12-31 | 1999-03-02 | Ormat Industries Ltd. | Vacuum evaporation method for producing textured C60 films |
US6303016B1 (en) | 1998-04-14 | 2001-10-16 | Tda Research, Inc. | Isolation of small-bandgap fullerenes and endohedral metallofullerenes |
US6472705B1 (en) | 1998-11-18 | 2002-10-29 | International Business Machines Corporation | Molecular memory & logic |
US6277438B1 (en) | 1999-05-03 | 2001-08-21 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Protective fullerene (C60) packaging system for microelectromechanical systems applications |
US6790242B2 (en) | 2000-12-29 | 2004-09-14 | Lam Research Corporation | Fullerene coated component of semiconductor processing equipment and method of manufacturing thereof |
JP5406451B2 (ja) * | 2005-09-05 | 2014-02-05 | 金子 博之 | フラーレン類又はナノチューブ、及び、フラーレン類又はナノチューブの製造方法 |
US9685600B2 (en) | 2015-02-18 | 2017-06-20 | Savannah River Nuclear Solutions, Llc | Enhanced superconductivity of fullerenes |
-
1992
- 1992-10-20 US US07/963,826 patent/US5380595A/en not_active Expired - Fee Related
- 1992-10-20 EP EP92117931A patent/EP0538797B1/de not_active Expired - Lifetime
- 1992-10-20 DE DE69224956T patent/DE69224956T2/de not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
DE69224956D1 (de) | 1998-05-07 |
EP0538797A1 (de) | 1993-04-28 |
EP0538797B1 (de) | 1998-04-01 |
US5380595A (en) | 1995-01-10 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8381 | Inventor (new situation) |
Free format text: UEBA, YOSHINOBU, C/O OSAKA WORKS OF SUMITOMO, KONOHANA-KU, OSAKA, JP OKUDA, NOBUYUKI,C/O OSAKA WORKSOF SUMITOM, KONOHANA-KU, OSAKA, JP OHKURA, KENGO, C/O OSAKA WORKS OF SUMITOMO, KONOHANA-KU, OSAKA, JP KUGAI, HIROKAZU, C/O OSAKA WORKS OF SUMITOMO, KONOHANA-KU, OSAKA, JP Free format text: UEBA, YOSHINOBU, C/O OSAKA WORKS OF SUMITOMO, KONOHANA-KU, OSAKA, JP OKUDA, NOBUYUKI,C/O OSAKA WORKS OF SUMITOM, KONOHANA-KU, OSAKA, JP OHKURA, KENGO, C/O OSAKA WORKS OF SUMITOMO, KONOHANA-KU, OSAKA, JP KUGAI, HIROKAZU, C/O OSAKA WORKS OF SUMITOMO, KONOHANA-KU, OSAKA, JP |
|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |