DE2353770C3 - Halbleiteranordnung - Google Patents

Halbleiteranordnung

Info

Publication number
DE2353770C3
DE2353770C3 DE2353770A DE2353770A DE2353770C3 DE 2353770 C3 DE2353770 C3 DE 2353770C3 DE 2353770 A DE2353770 A DE 2353770A DE 2353770 A DE2353770 A DE 2353770A DE 2353770 C3 DE2353770 C3 DE 2353770C3
Authority
DE
Germany
Prior art keywords
resistance
semiconductor
layer
connection
low
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE2353770A
Other languages
German (de)
English (en)
Other versions
DE2353770B2 (de
DE2353770A1 (de
Inventor
Johannes Thomas Schrama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of DE2353770A1 publication Critical patent/DE2353770A1/de
Publication of DE2353770B2 publication Critical patent/DE2353770B2/de
Application granted granted Critical
Publication of DE2353770C3 publication Critical patent/DE2353770C3/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/74—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of diodes
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/24—Frequency- independent attenuators
    • H03H7/25—Frequency- independent attenuators comprising an element controlled by an electric or magnetic variable
    • H03H7/253—Frequency- independent attenuators comprising an element controlled by an electric or magnetic variable the element being a diode
    • H03H7/255—Frequency- independent attenuators comprising an element controlled by an electric or magnetic variable the element being a diode the element being a PIN diode
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/061—Manufacture or treatment using SOI processes together with lateral isolation, e.g. combinations of SOI and shallow trench isolations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/181—Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/60—Strap connectors, e.g. thick copper clips for grounding of power devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/021—Manufacture or treatment of air gaps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/20—Air gaps

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Attenuators (AREA)
  • Power Conversion In General (AREA)
  • Amplitude Modulation (AREA)
  • Bipolar Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Non-Reversible Transmitting Devices (AREA)
DE2353770A 1972-11-10 1973-10-26 Halbleiteranordnung Expired DE2353770C3 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL7215200A NL7215200A (OSRAM) 1972-11-10 1972-11-10

Publications (3)

Publication Number Publication Date
DE2353770A1 DE2353770A1 (de) 1974-05-16
DE2353770B2 DE2353770B2 (de) 1981-07-16
DE2353770C3 true DE2353770C3 (de) 1982-03-25

Family

ID=19817338

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2353770A Expired DE2353770C3 (de) 1972-11-10 1973-10-26 Halbleiteranordnung

Country Status (15)

Country Link
US (1) US4143383A (OSRAM)
JP (1) JPS5227031B2 (OSRAM)
AT (1) ATA936373A (OSRAM)
BE (1) BE807079A (OSRAM)
BR (1) BR7308693D0 (OSRAM)
CA (1) CA1006274A (OSRAM)
CH (1) CH574165A5 (OSRAM)
DE (1) DE2353770C3 (OSRAM)
ES (1) ES420364A1 (OSRAM)
FR (1) FR2206589B1 (OSRAM)
GB (1) GB1445724A (OSRAM)
IN (1) IN140549B (OSRAM)
IT (1) IT996919B (OSRAM)
NL (1) NL7215200A (OSRAM)
SE (1) SE391997B (OSRAM)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4932640A (OSRAM) * 1972-07-20 1974-03-25
US4050055A (en) * 1976-07-26 1977-09-20 Krautkramer-Branson, Incorporated Attenuator circuit ultrasonic testing
US4257061A (en) * 1977-10-17 1981-03-17 John Fluke Mfg. Co., Inc. Thermally isolated monolithic semiconductor die
US4275362A (en) * 1979-03-16 1981-06-23 Rca Corporation Gain controlled amplifier using a pin diode
US4500845A (en) * 1983-03-15 1985-02-19 Texas Instruments Incorporated Programmable attenuator
JPS60126643A (ja) * 1983-12-13 1985-07-06 Matsushita Electric Ind Co Ltd 印刷媒体
US4738933A (en) * 1985-08-27 1988-04-19 Fei Microwave, Inc. Monolithic PIN diode and method for its manufacture
DE3675611D1 (de) * 1985-08-31 1990-12-20 Licentia Gmbh Verfahren zum herstellen eines beidseitig kontaktierten halbleiterkoerpers.
US4786828A (en) * 1987-05-15 1988-11-22 Hoffman Charles R Bias scheme for achieving voltage independent capacitance
US6835967B2 (en) * 2003-03-25 2004-12-28 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor diodes with fin structure
JP2008516441A (ja) * 2004-10-05 2008-05-15 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 半導体デバイス及びその使用

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AT270747B (de) * 1963-12-17 1969-05-12 Western Electric Co Verfahren zum Herstellen von mechanisch abgestützten, elektrisch leitenden Anschlüssen an Halbleiterscheiben
DE1514453A1 (de) * 1965-04-26 1969-08-14 Siemens Ag Verfahren zum Herstellen von Halbleiterschaltungen
FR1540051A (fr) * 1966-09-21 1968-09-20 Rca Corp Microcircuit et son procédé de fabrication
US3475700A (en) * 1966-12-30 1969-10-28 Texas Instruments Inc Monolithic microwave duplexer switch
US3518585A (en) * 1966-12-30 1970-06-30 Texas Instruments Inc Voltage controlled a.c. signal attenuator
US3549960A (en) * 1967-12-20 1970-12-22 Massachusetts Inst Technology Thermo-photovoltaic converter having back-surface junctions
GB1259883A (en) * 1968-07-26 1972-01-12 Signetics Corp Encapsulated beam lead construction for semiconductor device and assembly and method
NL159822B (nl) * 1969-01-02 1979-03-15 Philips Nv Halfgeleiderinrichting.
JPS4828958B1 (OSRAM) * 1969-07-22 1973-09-06
FR2071043A5 (OSRAM) * 1969-12-16 1971-09-17 Thomson Csf
US3714473A (en) * 1971-05-12 1973-01-30 Bell Telephone Labor Inc Planar semiconductor device utilizing confined charge carrier beams
DE2203247C3 (de) * 1972-01-24 1980-02-28 Siemens Ag, 1000 Berlin Und 8000 Muenchen Halbleiterbauelement mit steuerbarer Dämpfung sowie Schaltungsanordnung zu dessen Betrieb

Also Published As

Publication number Publication date
ATA936373A (de) 1979-06-15
BE807079A (nl) 1974-05-08
JPS5227031B2 (OSRAM) 1977-07-18
FR2206589A1 (OSRAM) 1974-06-07
BR7308693D0 (pt) 1974-08-22
CA1006274A (en) 1977-03-01
IT996919B (it) 1975-12-10
JPS50772A (OSRAM) 1975-01-07
DE2353770B2 (de) 1981-07-16
AU6232073A (en) 1975-05-15
IN140549B (OSRAM) 1976-11-27
NL7215200A (OSRAM) 1974-05-14
US4143383A (en) 1979-03-06
SE391997B (sv) 1977-03-07
DE2353770A1 (de) 1974-05-16
CH574165A5 (OSRAM) 1976-03-31
GB1445724A (en) 1976-08-11
FR2206589B1 (OSRAM) 1978-02-24
ES420364A1 (es) 1976-04-16

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Legal Events

Date Code Title Description
C3 Grant after two publication steps (3rd publication)
8339 Ceased/non-payment of the annual fee