DE2335821A1 - Teilchenbeschleuniger - Google Patents
TeilchenbeschleunigerInfo
- Publication number
- DE2335821A1 DE2335821A1 DE19732335821 DE2335821A DE2335821A1 DE 2335821 A1 DE2335821 A1 DE 2335821A1 DE 19732335821 DE19732335821 DE 19732335821 DE 2335821 A DE2335821 A DE 2335821A DE 2335821 A1 DE2335821 A1 DE 2335821A1
- Authority
- DE
- Germany
- Prior art keywords
- particle
- charged particles
- generating
- particle accelerator
- accelerator according
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000002245 particle Substances 0.000 title claims description 68
- 239000004065 semiconductor Substances 0.000 claims description 15
- 238000000034 method Methods 0.000 claims description 12
- 230000001133 acceleration Effects 0.000 claims description 11
- 230000005465 channeling Effects 0.000 claims description 6
- 230000005684 electric field Effects 0.000 claims description 4
- 230000005686 electrostatic field Effects 0.000 claims description 3
- 150000002500 ions Chemical class 0.000 description 68
- 238000010884 ion-beam technique Methods 0.000 description 16
- 239000000463 material Substances 0.000 description 11
- 238000005468 ion implantation Methods 0.000 description 10
- 238000002513 implantation Methods 0.000 description 9
- 238000010438 heat treatment Methods 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000012544 monitoring process Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 239000013077 target material Substances 0.000 description 4
- 235000012431 wafers Nutrition 0.000 description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical group [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 3
- 239000007943 implant Substances 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- -1 boron ions Chemical class 0.000 description 2
- 238000005219 brazing Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- CFOAUMXQOCBWNJ-UHFFFAOYSA-N [B].[Si] Chemical compound [B].[Si] CFOAUMXQOCBWNJ-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000003116 impacting effect Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 238000012806 monitoring device Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000003908 quality control method Methods 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 239000011364 vaporized material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
-
- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
- G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
- G21K1/08—Deviation, concentration or focusing of the beam by electric or magnetic means
- G21K1/093—Deviation, concentration or focusing of the beam by electric or magnetic means by magnetic means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/3002—Details
- H01J37/3007—Electron or ion-optical systems
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H5/00—Direct voltage accelerators; Accelerators using single pulses
Landscapes
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Plasma & Fusion (AREA)
- General Engineering & Computer Science (AREA)
- High Energy & Nuclear Physics (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US00271497A US3845312A (en) | 1972-07-13 | 1972-07-13 | Particle accelerator producing a uniformly expanded particle beam of uniform cross-sectioned density |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE2335821A1 true DE2335821A1 (de) | 1974-01-31 |
Family
ID=23035842
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19732335821 Pending DE2335821A1 (de) | 1972-07-13 | 1973-07-13 | Teilchenbeschleuniger |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US3845312A (enrdf_load_stackoverflow) |
| JP (1) | JPS4957299A (enrdf_load_stackoverflow) |
| DE (1) | DE2335821A1 (enrdf_load_stackoverflow) |
| FR (1) | FR2193300B1 (enrdf_load_stackoverflow) |
| GB (1) | GB1438851A (enrdf_load_stackoverflow) |
| NL (1) | NL7309412A (enrdf_load_stackoverflow) |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| AT388628B (de) * | 1986-01-31 | 1989-08-10 | Ims Ionen Mikrofab Syst | Einrichtung fuer projektionsgeraete |
| US4757208A (en) * | 1986-03-07 | 1988-07-12 | Hughes Aircraft Company | Masked ion beam lithography system and method |
| WO1988002920A1 (en) * | 1986-10-08 | 1988-04-21 | Varian Associates, Inc. | Method and apparatus for constant angle of incidence scanning in ion beam systems |
| AT393333B (de) * | 1986-11-27 | 1991-09-25 | Ims Ionen Mikrofab Syst | Ionenprojektionseinrichtung fuer schattenprojektion |
| AT393925B (de) * | 1987-06-02 | 1992-01-10 | Ims Ionen Mikrofab Syst | Anordnung zur durchfuehrung eines verfahrens zum positionieren der abbildung der auf einer maske befindlichen struktur auf ein substrat, und verfahren zum ausrichten von auf einer maske angeordneten markierungen auf markierungen, die auf einem traeger angeordnet sind |
| DE3734442A1 (de) * | 1987-10-12 | 1989-04-27 | Kernforschungsanlage Juelich | Verfahren und vorrichtung zur bestrahlung grosser flaechen mit ionen |
| GB8725459D0 (en) * | 1987-10-30 | 1987-12-02 | Nat Research Dev Corpn | Generating particle beams |
| US4914305A (en) * | 1989-01-04 | 1990-04-03 | Eaton Corporation | Uniform cross section ion beam system |
| SE463055B (sv) * | 1989-02-10 | 1990-10-01 | Scanditronix Ab | Anordning foer att bestraala artiklar med elektroner samt magnetisk lins foer avboejning av straalar av laddade partiklar, saerskilt elektroner |
| JP2648642B2 (ja) * | 1990-04-17 | 1997-09-03 | アプライド マテリアルズ インコーポレイテッド | 巾広ビームでイオンインプランテーションを行なう方法及び装置 |
| US5350926A (en) * | 1993-03-11 | 1994-09-27 | Diamond Semiconductor Group, Inc. | Compact high current broad beam ion implanter |
| US5834786A (en) * | 1996-07-15 | 1998-11-10 | Diamond Semiconductor Group, Inc. | High current ribbon beam ion implanter |
| US5757009A (en) * | 1996-12-27 | 1998-05-26 | Northrop Grumman Corporation | Charged particle beam expander |
| US6693289B1 (en) | 2000-02-07 | 2004-02-17 | Nec Electronics, Inc. | Operationally positionable source magnet field |
| JP4795755B2 (ja) * | 2005-08-25 | 2011-10-19 | 株式会社日立ハイテクノロジーズ | 半導体基板の製造装置 |
| US7391038B2 (en) * | 2006-03-21 | 2008-06-24 | Varian Semiconductor Equipment Associates, Inc. | Technique for isocentric ion beam scanning |
| EP2329692B1 (en) * | 2008-08-11 | 2018-03-21 | Ion Beam Applications S.A. | High-current dc proton accelerator |
| EP2485571B1 (en) | 2011-02-08 | 2014-06-11 | High Voltage Engineering Europa B.V. | High-current single-ended DC accelerator |
| CN103140012A (zh) * | 2011-11-25 | 2013-06-05 | 中国原子能科学研究院 | 具有钛膜保护功能的电子辐照加速器 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2866902A (en) * | 1955-07-05 | 1958-12-30 | High Voltage Engineering Corp | Method of and apparatus for irradiating matter with high energy electrons |
| US2941077A (en) * | 1958-07-07 | 1960-06-14 | Applied Radiation Corp | Method of enlarging and shaping charged particle beams |
| US3120609A (en) * | 1961-05-04 | 1964-02-04 | High Voltage Engineering Corp | Enlargement of charged particle beams |
| US3434894A (en) * | 1965-10-06 | 1969-03-25 | Ion Physics Corp | Fabricating solid state devices by ion implantation |
| US3313969A (en) * | 1966-03-25 | 1967-04-11 | Boeing Co | Charged particle deflecting apparatus having hemispherical electrodes |
| US3547074A (en) * | 1967-04-13 | 1970-12-15 | Block Engineering | Apparatus for forming microelements |
| FR2045238A5 (enrdf_load_stackoverflow) * | 1969-06-26 | 1971-02-26 | Commissariat Energie Atomique | |
| US3621327A (en) * | 1969-12-29 | 1971-11-16 | Ford Motor Co | Method of controlling the intensity of an electron beam |
| FR2080511A1 (enrdf_load_stackoverflow) * | 1970-01-20 | 1971-11-19 | Commissariat Energie Atomique |
-
1972
- 1972-07-13 US US00271497A patent/US3845312A/en not_active Expired - Lifetime
-
1973
- 1973-07-02 GB GB3141373A patent/GB1438851A/en not_active Expired
- 1973-07-05 NL NL7309412A patent/NL7309412A/xx unknown
- 1973-07-10 FR FR7325250A patent/FR2193300B1/fr not_active Expired
- 1973-07-12 JP JP48078858A patent/JPS4957299A/ja active Pending
- 1973-07-13 DE DE19732335821 patent/DE2335821A1/de active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| NL7309412A (enrdf_load_stackoverflow) | 1974-01-15 |
| FR2193300A1 (enrdf_load_stackoverflow) | 1974-02-15 |
| US3845312A (en) | 1974-10-29 |
| FR2193300B1 (enrdf_load_stackoverflow) | 1978-05-26 |
| GB1438851A (en) | 1976-06-09 |
| JPS4957299A (enrdf_load_stackoverflow) | 1974-06-04 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OHJ | Non-payment of the annual fee |