GB1438851A - Ion particle accelerator - Google Patents

Ion particle accelerator

Info

Publication number
GB1438851A
GB1438851A GB3141373A GB3141373A GB1438851A GB 1438851 A GB1438851 A GB 1438851A GB 3141373 A GB3141373 A GB 3141373A GB 3141373 A GB3141373 A GB 3141373A GB 1438851 A GB1438851 A GB 1438851A
Authority
GB
United Kingdom
Prior art keywords
ion
target
section
july
degrees
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB3141373A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Publication of GB1438851A publication Critical patent/GB1438851A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
    • G21K1/08—Deviation, concentration or focusing of the beam by electric or magnetic means
    • G21K1/093—Deviation, concentration or focusing of the beam by electric or magnetic means by magnetic means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/3002—Details
    • H01J37/3007—Electron or ion-optical systems
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H5/00—Direct voltage accelerators; Accelerators using single pulses

Landscapes

  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Plasma & Fusion (AREA)
  • General Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Physical Vapour Deposition (AREA)
GB3141373A 1972-07-13 1973-07-02 Ion particle accelerator Expired GB1438851A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US00271497A US3845312A (en) 1972-07-13 1972-07-13 Particle accelerator producing a uniformly expanded particle beam of uniform cross-sectioned density

Publications (1)

Publication Number Publication Date
GB1438851A true GB1438851A (en) 1976-06-09

Family

ID=23035842

Family Applications (1)

Application Number Title Priority Date Filing Date
GB3141373A Expired GB1438851A (en) 1972-07-13 1973-07-02 Ion particle accelerator

Country Status (6)

Country Link
US (1) US3845312A (enrdf_load_stackoverflow)
JP (1) JPS4957299A (enrdf_load_stackoverflow)
DE (1) DE2335821A1 (enrdf_load_stackoverflow)
FR (1) FR2193300B1 (enrdf_load_stackoverflow)
GB (1) GB1438851A (enrdf_load_stackoverflow)
NL (1) NL7309412A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1988002920A1 (en) * 1986-10-08 1988-04-21 Varian Associates, Inc. Method and apparatus for constant angle of incidence scanning in ion beam systems
GB2211984A (en) * 1987-10-30 1989-07-12 Nat Res Dev Particle beam source

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AT388628B (de) * 1986-01-31 1989-08-10 Ims Ionen Mikrofab Syst Einrichtung fuer projektionsgeraete
US4757208A (en) * 1986-03-07 1988-07-12 Hughes Aircraft Company Masked ion beam lithography system and method
AT393333B (de) * 1986-11-27 1991-09-25 Ims Ionen Mikrofab Syst Ionenprojektionseinrichtung fuer schattenprojektion
AT393925B (de) * 1987-06-02 1992-01-10 Ims Ionen Mikrofab Syst Anordnung zur durchfuehrung eines verfahrens zum positionieren der abbildung der auf einer maske befindlichen struktur auf ein substrat, und verfahren zum ausrichten von auf einer maske angeordneten markierungen auf markierungen, die auf einem traeger angeordnet sind
DE3734442A1 (de) * 1987-10-12 1989-04-27 Kernforschungsanlage Juelich Verfahren und vorrichtung zur bestrahlung grosser flaechen mit ionen
US4914305A (en) * 1989-01-04 1990-04-03 Eaton Corporation Uniform cross section ion beam system
SE463055B (sv) * 1989-02-10 1990-10-01 Scanditronix Ab Anordning foer att bestraala artiklar med elektroner samt magnetisk lins foer avboejning av straalar av laddade partiklar, saerskilt elektroner
JP2648642B2 (ja) * 1990-04-17 1997-09-03 アプライド マテリアルズ インコーポレイテッド 巾広ビームでイオンインプランテーションを行なう方法及び装置
US5350926A (en) * 1993-03-11 1994-09-27 Diamond Semiconductor Group, Inc. Compact high current broad beam ion implanter
US5834786A (en) * 1996-07-15 1998-11-10 Diamond Semiconductor Group, Inc. High current ribbon beam ion implanter
US5757009A (en) * 1996-12-27 1998-05-26 Northrop Grumman Corporation Charged particle beam expander
US6693289B1 (en) 2000-02-07 2004-02-17 Nec Electronics, Inc. Operationally positionable source magnet field
JP4795755B2 (ja) * 2005-08-25 2011-10-19 株式会社日立ハイテクノロジーズ 半導体基板の製造装置
US7391038B2 (en) * 2006-03-21 2008-06-24 Varian Semiconductor Equipment Associates, Inc. Technique for isocentric ion beam scanning
EP2329692B1 (en) * 2008-08-11 2018-03-21 Ion Beam Applications S.A. High-current dc proton accelerator
EP2485571B1 (en) 2011-02-08 2014-06-11 High Voltage Engineering Europa B.V. High-current single-ended DC accelerator
CN103140012A (zh) * 2011-11-25 2013-06-05 中国原子能科学研究院 具有钛膜保护功能的电子辐照加速器

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2866902A (en) * 1955-07-05 1958-12-30 High Voltage Engineering Corp Method of and apparatus for irradiating matter with high energy electrons
US2941077A (en) * 1958-07-07 1960-06-14 Applied Radiation Corp Method of enlarging and shaping charged particle beams
US3120609A (en) * 1961-05-04 1964-02-04 High Voltage Engineering Corp Enlargement of charged particle beams
US3434894A (en) * 1965-10-06 1969-03-25 Ion Physics Corp Fabricating solid state devices by ion implantation
US3313969A (en) * 1966-03-25 1967-04-11 Boeing Co Charged particle deflecting apparatus having hemispherical electrodes
US3547074A (en) * 1967-04-13 1970-12-15 Block Engineering Apparatus for forming microelements
FR2045238A5 (enrdf_load_stackoverflow) * 1969-06-26 1971-02-26 Commissariat Energie Atomique
US3621327A (en) * 1969-12-29 1971-11-16 Ford Motor Co Method of controlling the intensity of an electron beam
FR2080511A1 (enrdf_load_stackoverflow) * 1970-01-20 1971-11-19 Commissariat Energie Atomique

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1988002920A1 (en) * 1986-10-08 1988-04-21 Varian Associates, Inc. Method and apparatus for constant angle of incidence scanning in ion beam systems
GB2211984A (en) * 1987-10-30 1989-07-12 Nat Res Dev Particle beam source
GB2211984B (en) * 1987-10-30 1992-06-03 Nat Res Dev Method and apparatus for generating particle beams

Also Published As

Publication number Publication date
NL7309412A (enrdf_load_stackoverflow) 1974-01-15
FR2193300A1 (enrdf_load_stackoverflow) 1974-02-15
US3845312A (en) 1974-10-29
FR2193300B1 (enrdf_load_stackoverflow) 1978-05-26
DE2335821A1 (de) 1974-01-31
JPS4957299A (enrdf_load_stackoverflow) 1974-06-04

Similar Documents

Publication Publication Date Title
GB1438851A (en) Ion particle accelerator
US4282083A (en) Penning sputter source
US4862032A (en) End-Hall ion source
US6497803B2 (en) Unbalanced plasma generating apparatus having cylindrical symmetry
JPH0265033A (ja) 無線周波数のイオンビーム源
US4122347A (en) Ion source
GB1270619A (en) Method of and apparatus for accelerating particles
US4661710A (en) Negative ion source
GB982669A (en) Improvements in or relating to electron beam generators
IL43509A (en) Wide angle isotope separator
US5441614A (en) Method and apparatus for planar magnetron sputtering
GB1494398A (en) Ion beam apparatus
JPS62122044A (ja) イオン加速器
GB2058142A (en) Sputtering electrodes
JPS61284573A (ja) 放電電極
GB2058143A (en) Sputtering electrodes
WO2001092595A1 (en) Unbalanced plasma generating apparatus having cylindrical symmetry
RU2231162C2 (ru) Источник с катодным конусом высокочастотных импульсов ионов водорода
JPS60121655A (ja) 高電圧イオン打込み装置
Baturin et al. Generation and formation of metal ion beams on high-dose ion implanter
GB829783A (en) Apparatus for producing beams of ions of a given element
AU632269B2 (en) Plasma ion implantation
JPH0216381B2 (enrdf_load_stackoverflow)
Keller et al. Optimization of a single-aperture extraction system for high-current ion sources
Bel'Chenko et al. Negative ion production in surface-plasma sources with unclosed electron drift discharges

Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PLNP Patent lapsed through nonpayment of renewal fees