JPS4957299A - - Google Patents

Info

Publication number
JPS4957299A
JPS4957299A JP48078858A JP7885873A JPS4957299A JP S4957299 A JPS4957299 A JP S4957299A JP 48078858 A JP48078858 A JP 48078858A JP 7885873 A JP7885873 A JP 7885873A JP S4957299 A JPS4957299 A JP S4957299A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP48078858A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS4957299A publication Critical patent/JPS4957299A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
    • G21K1/08—Deviation, concentration or focusing of the beam by electric or magnetic means
    • G21K1/093—Deviation, concentration or focusing of the beam by electric or magnetic means by magnetic means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/3002—Details
    • H01J37/3007—Electron or ion-optical systems
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H5/00—Direct voltage accelerators; Accelerators using single pulses

Landscapes

  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Plasma & Fusion (AREA)
  • General Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Physical Vapour Deposition (AREA)
JP48078858A 1972-07-13 1973-07-12 Pending JPS4957299A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US00271497A US3845312A (en) 1972-07-13 1972-07-13 Particle accelerator producing a uniformly expanded particle beam of uniform cross-sectioned density

Publications (1)

Publication Number Publication Date
JPS4957299A true JPS4957299A (ja) 1974-06-04

Family

ID=23035842

Family Applications (1)

Application Number Title Priority Date Filing Date
JP48078858A Pending JPS4957299A (ja) 1972-07-13 1973-07-12

Country Status (6)

Country Link
US (1) US3845312A (ja)
JP (1) JPS4957299A (ja)
DE (1) DE2335821A1 (ja)
FR (1) FR2193300B1 (ja)
GB (1) GB1438851A (ja)
NL (1) NL7309412A (ja)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AT388628B (de) * 1986-01-31 1989-08-10 Ims Ionen Mikrofab Syst Einrichtung fuer projektionsgeraete
US4757208A (en) * 1986-03-07 1988-07-12 Hughes Aircraft Company Masked ion beam lithography system and method
EP0287630A4 (en) * 1986-10-08 1989-07-25 Varian Associates METHOD AND DEVICE FOR SCANING WITH A CONSTANT INCLINATION ANGLE IN ION RAY SYSTEMS.
AT393333B (de) * 1986-11-27 1991-09-25 Ims Ionen Mikrofab Syst Ionenprojektionseinrichtung fuer schattenprojektion
AT393925B (de) * 1987-06-02 1992-01-10 Ims Ionen Mikrofab Syst Anordnung zur durchfuehrung eines verfahrens zum positionieren der abbildung der auf einer maske befindlichen struktur auf ein substrat, und verfahren zum ausrichten von auf einer maske angeordneten markierungen auf markierungen, die auf einem traeger angeordnet sind
DE3734442A1 (de) * 1987-10-12 1989-04-27 Kernforschungsanlage Juelich Verfahren und vorrichtung zur bestrahlung grosser flaechen mit ionen
GB8725459D0 (en) * 1987-10-30 1987-12-02 Nat Research Dev Corpn Generating particle beams
US4914305A (en) * 1989-01-04 1990-04-03 Eaton Corporation Uniform cross section ion beam system
SE463055B (sv) * 1989-02-10 1990-10-01 Scanditronix Ab Anordning foer att bestraala artiklar med elektroner samt magnetisk lins foer avboejning av straalar av laddade partiklar, saerskilt elektroner
JP2648642B2 (ja) * 1990-04-17 1997-09-03 アプライド マテリアルズ インコーポレイテッド 巾広ビームでイオンインプランテーションを行なう方法及び装置
US5350926A (en) * 1993-03-11 1994-09-27 Diamond Semiconductor Group, Inc. Compact high current broad beam ion implanter
US5834786A (en) * 1996-07-15 1998-11-10 Diamond Semiconductor Group, Inc. High current ribbon beam ion implanter
US5757009A (en) * 1996-12-27 1998-05-26 Northrop Grumman Corporation Charged particle beam expander
US6693289B1 (en) 2000-02-07 2004-02-17 Nec Electronics, Inc. Operationally positionable source magnet field
JP4795755B2 (ja) * 2005-08-25 2011-10-19 株式会社日立ハイテクノロジーズ 半導体基板の製造装置
US7391038B2 (en) * 2006-03-21 2008-06-24 Varian Semiconductor Equipment Associates, Inc. Technique for isocentric ion beam scanning
KR101194652B1 (ko) * 2008-08-11 2012-10-29 이온빔 어플리케이션스 에스.에이. 고전류 디시 양성자 가속기
EP2485571B1 (en) 2011-02-08 2014-06-11 High Voltage Engineering Europa B.V. High-current single-ended DC accelerator
CN103140012A (zh) * 2011-11-25 2013-06-05 中国原子能科学研究院 具有钛膜保护功能的电子辐照加速器

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2866902A (en) * 1955-07-05 1958-12-30 High Voltage Engineering Corp Method of and apparatus for irradiating matter with high energy electrons
US2941077A (en) * 1958-07-07 1960-06-14 Applied Radiation Corp Method of enlarging and shaping charged particle beams
US3120609A (en) * 1961-05-04 1964-02-04 High Voltage Engineering Corp Enlargement of charged particle beams
US3434894A (en) * 1965-10-06 1969-03-25 Ion Physics Corp Fabricating solid state devices by ion implantation
US3313969A (en) * 1966-03-25 1967-04-11 Boeing Co Charged particle deflecting apparatus having hemispherical electrodes
US3547074A (en) * 1967-04-13 1970-12-15 Block Engineering Apparatus for forming microelements
FR2045238A5 (ja) * 1969-06-26 1971-02-26 Commissariat Energie Atomique
US3621327A (en) * 1969-12-29 1971-11-16 Ford Motor Co Method of controlling the intensity of an electron beam
FR2080511A1 (ja) * 1970-01-20 1971-11-19 Commissariat Energie Atomique

Also Published As

Publication number Publication date
US3845312A (en) 1974-10-29
FR2193300A1 (ja) 1974-02-15
DE2335821A1 (de) 1974-01-31
NL7309412A (ja) 1974-01-15
GB1438851A (en) 1976-06-09
FR2193300B1 (ja) 1978-05-26

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