US3845312A - Particle accelerator producing a uniformly expanded particle beam of uniform cross-sectioned density - Google Patents

Particle accelerator producing a uniformly expanded particle beam of uniform cross-sectioned density Download PDF

Info

Publication number
US3845312A
US3845312A US00271497A US27149772A US3845312A US 3845312 A US3845312 A US 3845312A US 00271497 A US00271497 A US 00271497A US 27149772 A US27149772 A US 27149772A US 3845312 A US3845312 A US 3845312A
Authority
US
United States
Prior art keywords
particle accelerator
charged particles
broad
axis
producing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
US00271497A
Other languages
English (en)
Inventor
R Allison
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Priority to US00271497A priority Critical patent/US3845312A/en
Priority to GB3141373A priority patent/GB1438851A/en
Priority to NL7309412A priority patent/NL7309412A/xx
Priority to FR7325250A priority patent/FR2193300B1/fr
Priority to JP48078858A priority patent/JPS4957299A/ja
Priority to DE19732335821 priority patent/DE2335821A1/de
Application granted granted Critical
Publication of US3845312A publication Critical patent/US3845312A/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
    • G21K1/08—Deviation, concentration or focusing of the beam by electric or magnetic means
    • G21K1/093—Deviation, concentration or focusing of the beam by electric or magnetic means by magnetic means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/3002—Details
    • H01J37/3007—Electron or ion-optical systems
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H5/00—Direct voltage accelerators; Accelerators using single pulses

Definitions

  • this technique affords a method of directing a beam of ions to a particular area of the substrate target material.
  • the ion beams are maneuvered or programmed to scan a particular area of the substrate material, such as a silicon wafer, with, for example, either phosphorous or boron ions or other elements.
  • the substrate material such as a silicon wafer
  • the apparatus of the present invention fulfills all the necessary criteria for ion implantation and further, decreases the process time for implanting a semiconductor device by including in its combination an ion source having a high ion intensity output beam and further comprising apparatus for enlarging the crosssectional area of the ion beam, modifying the crossbeam particle density is uniform over the target area.
  • FIG. 1 is a schematic view of the apparatus for obtaining the broad ion beam.
  • FIG. 2 is a cross-sectional view of the ion source apparatus.
  • FIG. 2A is a cross-sectional view of the charging section of the ion source apparatus.
  • FIG. 2B is an illustration of the disk used to maintain the discharge of the ion source.
  • FIG. 3 is a partial sectional view of the analyzer magnet.
  • FIG. 4 is a vertical cross-sectional elevation of the non-linear lens.
  • FIG. 5 is a horizontal cross-sectional view of the nonlinear lens taken at line 5-5 from FIG. 4.
  • FIG. 6 is a schematic block diagram of a typical ion implantation apparatus control system.
  • FIG. 7 is a vertical cross-sectional elevation of an electrostatic non-linear lens.
  • FIG. 8 is a horizontal cross-sectional view of the nonlinear lens of FIG. 7 taken at line 8-8.
  • FIG. 9 is a cross-sectional elevational view of a magnetic beam spreader.
  • FIG. 10 is an elevational view of another embodiment bf the target plate area.
  • FIG. 1 there is shown a simplified schematic cross-sectional elevation of the essential elements of the ion implantation apparatus of the present invention which comprises, basically, a target 10, upon which are secured the devices into which it is desired to implant ions of a particular element, for example, wafers of silicon into which ions of phosphorous are to be implanted, an ion source 11 used to initially generate ions of the material being implanted, ion extractor 12, used to remove the ions from ion source 11 in the form of an ion beam 14 and providing them with an initial velocity, analyzer magnet apparatus 16 used for eliminating unwanted ions from ion beam 14, an accelerator section 21 used to achieve final acceleration of the ions and to contol beam divergence, a non-linear lens 18 used to adjust the ion beam cross-sectional density to be uniform over the target area, and a beam rotating solenoid 19 used to change the trajectory of the ions in beam 14 so that they strike target 10 at an ion source 11 used to initially generate ions of the material being implant
  • Target is also arranged to be tilted so that, if desired, the directed angle of the beam with respect to the normal to the substrate is 7, plus or minus 2, as the desired angle or it can be any other convenient angle as may be found most beneficial for implantation and to avoid channeling.
  • Target 10 is also provided with a beam monitor plate immediately below the plane of the target area so the beam density and uniformity of cross-sectional ion density can be monitored at any time for quality control.
  • Ion source 11 is shown in greater detail in FIG. 2 in cross-sectional elevation and comprises, basically, an oven section 22 in which the material to be implanted is initially heated to cause vaporization and a discharge section 23 in which the vaporized material is contained as an ion plasma 24 (FIG. 2A).
  • Ion source magnet 25 is used for containing the ion plasma in discharge section 23.
  • Oven section 22 comprises a chamber 28 having an orifice 29 facing discharge section 23 into which chamber 28 the material being implanted is placed, and source chamber holder 31 for holding source chamber 28 and which also contains ion source heater 32, which, for the embodiment shown, is an electrical resistance heater.
  • Ion source chamber holder 31 is attached to apparatus housing34 by means of bolts or the like
  • Discharge section 23 comprises, basically, a generally cylindrically shaped ion source assembly 43 enclosed by anode heating element 44 which, for the embodiment shown, is an electrical resistance heater which is used to prevent condensation of metallic vapor in the ion source.
  • ion source assembly 43 comprises a generally cylindrically shaped ion anode 36 whose longitudinal axis 37 is coincident with that of ion oven section 22 (FIG. 2) and held in place by retainer rings 38 and 39 and'is electrically insulated therefrom by insulator rings 41 and 42.
  • a back plate 33 having an opening 40 aligned with axis 37 is attached to retainer ring 38 while a front plate 35 having an opening 52 also aligned with axis 37 is attached to retainer ring 39.
  • the entire ion source assembly 43 is assembled by stacking the back plate, retainer rings, anode and front plate together with shims of a brazing material sandwiched between and then heating the entire assembly to brazing termperature to achieve a solidly brazed assembly.
  • Two cathode disks 46a and 46b are shown in greater detail in FIG. 2B and further comprise several openings 55 cut in the outer edge to allow the vaporized material from oven section 22 to reach discharge section 23 and to leave discharge section 23 through front opening 52 and be accelerated and formed into ion beam 14.
  • Ion source magnet 25 comprises a solenoid, shown in FIG. 2 in partial section, whose axis of rotation and polar axis is coincident with the longitudinal axis of anode 36 and whose width is nearly that of ion discharge section 23.
  • Ion extractor 12 comprises an extractor port 47, the axis of which is coincident with that of anode 36 and an extractor electrode 48 defining a cup having an entrance port 49, a cup body 50 and an exit lip 51.
  • Extractor I2 is electrically insulated from ion source 11 so that it can be raised to any desired electrical potential in order to extract ions from ion source 11- and accelerate them to a particular initial velocity and shape them into an ion beam 14.
  • Analysis magnet apparatus 16 toward which ion beam 14 is initially accelerated comprises, as seen in FIG. 3, a powerful magnet whose lines of force pass perpendicular to the axis of beam 14, in the present drawing, perpendicular to the surface of the drawing of FIG. 3, causing the ions in beam 14 to be deflected in an arc whose radius is dependent upon the velocity of the ion and its mass.
  • the magnet edges are tilted with respect to the beam to provide vertical focusing.
  • analyzer magnet 16 acts as a mass spectrometer which removes those ions which are heavier or lighter than the mass of the desired implanting material in order to obtain a beam of ions within a narrow mass range, and which focuses the resultant pure ion beam at or near the output edge of the magnet.
  • Analyzer magnet 16 apparatus also comprises an exit port 54 and, as will be noted below, the shape of the magnetic field at exit port 54 can also be controlled to achieve beam spreading, that is, to act as a means for creating a divergent beam of ions.
  • an accelerator section 21 is provided proximate exit port 54 of analyzer magnet 16 (FIG; 1) before beam 14 enters non-linear lens 18.
  • the column gradient is adjusted so that the beam expands initially inside the column in a drift space.
  • accelerator section 2l comprises an upper accelerating electrode 27 and a lower accelerating electrode 30 for adjusting the beam energy.
  • the gradient field of the accelerator section causes beam 14 to expand.
  • the polar axis of the electrical field' is coincident with the axis of beam 14. 1
  • Expansion of the beam is illustrated in FIG. 1 by taking five typical particle trajectories 67, 68, 69, 67 and 68' and tracing their paths through the system after they leave exit port 54.
  • FIGS. 4 and 5 there are shown a vertical sectional view (FIG. 4) of non-linear lens 18 and a horizontal section taken through lens 18 at line 5-5 (FIG. 5).
  • Non-linear lens 18 comprises a generally cylindrical housing and pole support 58, whose axis of rotation is coincident with the axis of beam l4, a plurality of equally spaced poles or coil supports 59 attached to the inside of housing 58 and an equal plurality of coils 60 mounted on said poles whose polar axes are perpendicular to the axis of beam 14 such that a magnetic field is created having lines of force 62 (dotted lines) as shown in FIG. 5.
  • FIGS. 7 Another embodiment of an electrostatic non-linear lens 18' which can also be utilized is shown in FIGS. 7
  • the polarity of the electrical charge placed on plates 89 is arranged to be opposite for adjacent poles in order to create the electrostatic lines of force as shown by dotted lines 92 in FIG. 8 which are also perpendicular to the axis of beam 14.
  • ions after passing through non-linear lens 18, since they are stilldivergent, must be changed as to their trajectory so that they strike target 10 with an angular spread which prevents channeling.
  • target 10 is tilted with respect to the beam approximately 7 degrees.
  • Orientation of the wafer or target material with respect to the particle trajectory in order to prevent channeling can be achieved either by the use of 'a curved target holder plate 94 which exposes the wafers to the diverging particle beam, as shown in FIG. 10, or by the use of a flat target plate 10 and a beam rotator solenoid 19, as shown in FIG. I, which changes the trajectory of the beam particles so that they strike the target material within the desired angular range.
  • Beam rotator solenoid 19 is provided to perform an adjustment in the beam directed angle so that all trajectories are nearly parallel and comprises a solenoid coil 64 (FIG. 1) and an iron ring 65 whose axes of rotation and polar axes are coincident with the axis of beam 14 and which acts as a thin lens upon the beam.
  • solenoid 19 provides focusing control of the beam at low energies.
  • Typical ion trajectories are shown in FIG; 1 by dashed lines 67, 68, 69, 67' and 68'
  • an alternate method of causing the beam to diverge may be desired, rather than the use of electrostatic section 21.
  • a magnetic means for causing beam divergence may be used as shown in FIG. 9.
  • magnetic beam spreader 17 is used in place of section 21 and comprises a solenoid 96 and an iron shim 97 whose axes of rotation and polar axes are coincident with the axis of beam 14.
  • FIG. 6 there is shown a schematic block diagram of a typical ion implantation apparatus control system of the present invention.
  • the system comprises, in addition to the basic elements of a target 10, an ion source 11, an ion extractor 12, an analyzer magnet 16, an accelerator section 21, a non-linear lens 18, a beam rotator l9 and a beam monitor 20, the additional items which energize and control the above elements, in particular, ion source power supply and control 72 which energizes oven heating element 32 and anode'heating element 44 and also provides the electrical potential for anode 36 and power for magnet 25.
  • ion source power supply and control 72 which energizes oven heating element 32 and anode'heating element 44 and also provides the electrical potential for anode 36 and power for magnet 25.
  • ion extractor power supply and control 73 Also included in the system are ion extractor power supply and control 73, analyzer magnet power supply and control 74, accelerator section power supply and control 75, non-linear lens power supply and control 77, rotator solenoid power supply and control 78, monitor plate amplifier 79 and ion vacuum pump power supply and control 80, all of which are connected to implantation master control panel 81.
  • a main shell primary high voltage supply 82 is connected between master control panel .81 and extractor power supply and control 73 and ion source supply and control 72, while an analyzer primary high voltage supply 83 is connected between analyzer magnet power supply and control 74 and master control panel 81.
  • the items to receive the implanting material are placed at the target area 10 with appropriate masks placed over the chip or wafer to block out the areas where implantation is not desired.
  • the system is then evacuated by energizing mechanical vacuum pump 85 and diffusion or ion vacuum pump 86.
  • the ion implantation material such as phosphorous
  • the dissociated vapor enters ion source assembly 43 of discharge section 23 where it is ionized to create a charged plasma 24 within anode 36 which is raised to an electrical potential of the order of 3 kilovolts energized by the power supply of ion source power supply and control 72.
  • the intensity of the magnetic field created by ion source magnet 25 is adjusted through control 72 from master control panel 81 to provide containment of the plasma by anode 36.
  • the charged plasma in ion anode 36 is then drawn out by adjusting the electrical potential on extractor electrode 48 to achieve an accelerating voltage difference V(0) between ion source assembly and extractor electrode 48 which accelerates the ions to an initial velocity or energy level to define ion beam 14.
  • the magnetic field of analyzer magnet 16 is adjusted through its control 74 from master control panel 81 so that ions of the desired mass pass through analyzer magnet exit port 54.
  • accelerator section 21 is adjusted through its control 75 to change the energy level and velocity of the ions as required for the particular implantation requirements.
  • the electrical potential on upper electrode 27 and lower electrode 30 of accelerator section 21 is adjusted through accelerator power supply and control 75 to provide the desired final implant energy.
  • the electrostatic field of accelerator section 21 is used to shape beam 14 as indicated by typical ion trajectories 67, 68, 69, 67' and 68'.
  • the intensity of the magnetic field of non-linear lens 18 is adjusted through its control 77 to achieve, as detected by beam monitor plate 20, a beam cross-section of uniform ion density.
  • the intensity of the magnetic field of beam rotator solenoid 19 is adjusted through its control 78 to achieve a perpendicular impingement of ions on target 10 which can also be detected by monitor plate 20.
  • the silicon wafers at target area 10 can then be exposed to the beam of ions for the particular period of time necessaryto implant sufficient ions to create the particular semiconductor device desired;
  • a broad beam particle accelerator comprising:
  • source means for producing a beam of charged particles having a substantially uniform cross-sectional distribution of charged particles
  • separator means for directing particles produced by said source means towards said target area and for separating particles from said beam to produce a beam of charged particles having a selected mass range
  • said larger area beam means for causing said larger area beam to have a substantially uniform particle density over the cross-sectional area thereof at said target area.
  • the broad beam particle accelerator as claimed in 1 further comprising v means for changing the trajectories of the particles of said larger area beam of substantially uniform particle density so that their trajectories are generally parallel.
  • the broad beam particle accelerator as claimed in claim 2 wherein said means for changing the trajectory of said charged particles comprises a beam rotator solenoid having its polar axis coincident with the axis of said beam.
  • the broad beam particle accelerator as claimed in claim 2 further comprising means'for supplying an electrical current and controlling the voltage thereof connected to said means for changing the trajectory of said charged particles.
  • the broad beam particle accelerator as claimed in claim 1 wherein said source means for producing a beam of charged particles further comprises means for extracting said charged particles to form said beam having an approximately uniform crosssectional distribution of charged particles.
  • the broad beam particle accelerator as claimed in claim 1 wherein said means for expanding said beam comprises means for creating an electrical field defining an accelerating section having its polar axis coincident with the axis of said beam.
  • said means for creatingan electrical field defining an accelerating section comprises a first electrode having an entrance therein adapted to permit said beam of charged particles having a selected mass range to pass through,
  • a second electrode spaced from said first electrode toward said target area along the axis of said beam, and means for applying a voltage to said first and second electrodes and creating an electrical field for accelerating and expanding said beam.
  • said means for expanding said beam comprises a solenoid having its polar axis coincident with the axis of said beam, and
  • said means for expanding said beam to have a uniform particle density at the target area comprises a plurality of means disposed around the axis of said beam for producing a magnetic field surrounding said beam of charged particles, said means for producing a magnetic field being disposed with their polar axes perpendicular to the axis of said beam.
  • the broad beam particle accelerator as claimed in claim 1 wherein said means for causing said beam to have a uniform particle density at the target area comprises a plurality of means disposed around the axis of said beam for producing an electrostatic field surrounding said beam of charged particles. 12. The broad beam particle accelerator as claimed in claim 11. wherein said plurality of means for producing an electrostatic field are disposed with adjacent means having opposite polarity.
  • the broad beam particle accelerator as claimed in claim 13 further comprising means for supplying an electrical potential and controlling the voltage thereof connected to said source means for producing charged particles, means for supplying an electrical current and controlling the voltage thereof connected to said means for expanding said beam, and means for supplying an electrical current and controlling the voltage thereof connected to said means for causing said beam to have a uniform particle density.
  • the broad beam particle accelerator as claimed 50 in claim l'further comprising means for supplying an electrical current and controlling the voltage thereof connected to said separator means.

Landscapes

  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Plasma & Fusion (AREA)
  • General Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Physical Vapour Deposition (AREA)
US00271497A 1972-07-13 1972-07-13 Particle accelerator producing a uniformly expanded particle beam of uniform cross-sectioned density Expired - Lifetime US3845312A (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
US00271497A US3845312A (en) 1972-07-13 1972-07-13 Particle accelerator producing a uniformly expanded particle beam of uniform cross-sectioned density
GB3141373A GB1438851A (en) 1972-07-13 1973-07-02 Ion particle accelerator
NL7309412A NL7309412A (enrdf_load_stackoverflow) 1972-07-13 1973-07-05
FR7325250A FR2193300B1 (enrdf_load_stackoverflow) 1972-07-13 1973-07-10
JP48078858A JPS4957299A (enrdf_load_stackoverflow) 1972-07-13 1973-07-12
DE19732335821 DE2335821A1 (de) 1972-07-13 1973-07-13 Teilchenbeschleuniger

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US00271497A US3845312A (en) 1972-07-13 1972-07-13 Particle accelerator producing a uniformly expanded particle beam of uniform cross-sectioned density

Publications (1)

Publication Number Publication Date
US3845312A true US3845312A (en) 1974-10-29

Family

ID=23035842

Family Applications (1)

Application Number Title Priority Date Filing Date
US00271497A Expired - Lifetime US3845312A (en) 1972-07-13 1972-07-13 Particle accelerator producing a uniformly expanded particle beam of uniform cross-sectioned density

Country Status (6)

Country Link
US (1) US3845312A (enrdf_load_stackoverflow)
JP (1) JPS4957299A (enrdf_load_stackoverflow)
DE (1) DE2335821A1 (enrdf_load_stackoverflow)
FR (1) FR2193300B1 (enrdf_load_stackoverflow)
GB (1) GB1438851A (enrdf_load_stackoverflow)
NL (1) NL7309412A (enrdf_load_stackoverflow)

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1987005438A1 (en) * 1986-03-07 1987-09-11 Hughes Aircraft Company Masked ion beam lithography system and method
US4835392A (en) * 1986-11-27 1989-05-30 Ims Ionen Mikrofabrikations Systeme Gesellschaft M.B.H. Ion-projection apparatus
US4859857A (en) * 1986-01-31 1989-08-22 Ims Ionen Mikrofabrikations Systeme Gesellschaft Ion-projection apparatus and method of operating same
US4918316A (en) * 1987-10-12 1990-04-17 Kernforschungsanlage Julich Gesellschaft Mit Beschrankter Haftung Method of and apparatus for irradiating large surfaces with ions
WO1990009667A1 (en) * 1989-02-10 1990-08-23 Scanditronix Ab An irradiation device and a lense
US4967088A (en) * 1987-06-02 1990-10-30 Oesterreichische Investitionskredit Aktiengesellschaft Method and apparatus for image alignment in ion lithography
EP0377298A3 (en) * 1989-01-04 1991-02-27 Eaton Corporation Uniform cross section ion beam system
US5126575A (en) * 1990-04-17 1992-06-30 Applied Materials, Inc. Method and apparatus for broad beam ion implantation
US5350926A (en) * 1993-03-11 1994-09-27 Diamond Semiconductor Group, Inc. Compact high current broad beam ion implanter
US5757009A (en) * 1996-12-27 1998-05-26 Northrop Grumman Corporation Charged particle beam expander
US5834786A (en) * 1996-07-15 1998-11-10 Diamond Semiconductor Group, Inc. High current ribbon beam ion implanter
US6693289B1 (en) 2000-02-07 2004-02-17 Nec Electronics, Inc. Operationally positionable source magnet field
US20070114458A1 (en) * 2005-08-25 2007-05-24 Seiichi Nakamura Apparatus for manufacturing semiconductor substrates
US20070221870A1 (en) * 2006-03-21 2007-09-27 Olson Joseph C Technique for isocentric ion beam scanning
US20100033115A1 (en) * 2008-08-11 2010-02-11 Cleland Marshall R High-current dc proton accelerator
CN103140012A (zh) * 2011-11-25 2013-06-05 中国原子能科学研究院 具有钛膜保护功能的电子辐照加速器
US9084336B2 (en) 2011-02-08 2015-07-14 High Voltage Engineering Europa B.V. High current single-ended DC accelerator

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1988002920A1 (en) * 1986-10-08 1988-04-21 Varian Associates, Inc. Method and apparatus for constant angle of incidence scanning in ion beam systems
GB8725459D0 (en) * 1987-10-30 1987-12-02 Nat Research Dev Corpn Generating particle beams

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2866902A (en) * 1955-07-05 1958-12-30 High Voltage Engineering Corp Method of and apparatus for irradiating matter with high energy electrons
US2941077A (en) * 1958-07-07 1960-06-14 Applied Radiation Corp Method of enlarging and shaping charged particle beams
US3120609A (en) * 1961-05-04 1964-02-04 High Voltage Engineering Corp Enlargement of charged particle beams
US3434894A (en) * 1965-10-06 1969-03-25 Ion Physics Corp Fabricating solid state devices by ion implantation
US3547074A (en) * 1967-04-13 1970-12-15 Block Engineering Apparatus for forming microelements
US3621327A (en) * 1969-12-29 1971-11-16 Ford Motor Co Method of controlling the intensity of an electron beam
US3676693A (en) * 1969-06-26 1972-07-11 Commissariat Energie Atomique Method for the production of an ion beam having a large cross-sectional area

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3313969A (en) * 1966-03-25 1967-04-11 Boeing Co Charged particle deflecting apparatus having hemispherical electrodes
FR2080511A1 (enrdf_load_stackoverflow) * 1970-01-20 1971-11-19 Commissariat Energie Atomique

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2866902A (en) * 1955-07-05 1958-12-30 High Voltage Engineering Corp Method of and apparatus for irradiating matter with high energy electrons
US2941077A (en) * 1958-07-07 1960-06-14 Applied Radiation Corp Method of enlarging and shaping charged particle beams
US3120609A (en) * 1961-05-04 1964-02-04 High Voltage Engineering Corp Enlargement of charged particle beams
US3434894A (en) * 1965-10-06 1969-03-25 Ion Physics Corp Fabricating solid state devices by ion implantation
US3547074A (en) * 1967-04-13 1970-12-15 Block Engineering Apparatus for forming microelements
US3676693A (en) * 1969-06-26 1972-07-11 Commissariat Energie Atomique Method for the production of an ion beam having a large cross-sectional area
US3621327A (en) * 1969-12-29 1971-11-16 Ford Motor Co Method of controlling the intensity of an electron beam

Cited By (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4859857A (en) * 1986-01-31 1989-08-22 Ims Ionen Mikrofabrikations Systeme Gesellschaft Ion-projection apparatus and method of operating same
US4757208A (en) * 1986-03-07 1988-07-12 Hughes Aircraft Company Masked ion beam lithography system and method
WO1987005438A1 (en) * 1986-03-07 1987-09-11 Hughes Aircraft Company Masked ion beam lithography system and method
US4835392A (en) * 1986-11-27 1989-05-30 Ims Ionen Mikrofabrikations Systeme Gesellschaft M.B.H. Ion-projection apparatus
US4967088A (en) * 1987-06-02 1990-10-30 Oesterreichische Investitionskredit Aktiengesellschaft Method and apparatus for image alignment in ion lithography
US4918316A (en) * 1987-10-12 1990-04-17 Kernforschungsanlage Julich Gesellschaft Mit Beschrankter Haftung Method of and apparatus for irradiating large surfaces with ions
EP0377298A3 (en) * 1989-01-04 1991-02-27 Eaton Corporation Uniform cross section ion beam system
WO1990009667A1 (en) * 1989-02-10 1990-08-23 Scanditronix Ab An irradiation device and a lense
US5126575A (en) * 1990-04-17 1992-06-30 Applied Materials, Inc. Method and apparatus for broad beam ion implantation
US5350926A (en) * 1993-03-11 1994-09-27 Diamond Semiconductor Group, Inc. Compact high current broad beam ion implanter
US5834786A (en) * 1996-07-15 1998-11-10 Diamond Semiconductor Group, Inc. High current ribbon beam ion implanter
US5757009A (en) * 1996-12-27 1998-05-26 Northrop Grumman Corporation Charged particle beam expander
US6693289B1 (en) 2000-02-07 2004-02-17 Nec Electronics, Inc. Operationally positionable source magnet field
US20070114458A1 (en) * 2005-08-25 2007-05-24 Seiichi Nakamura Apparatus for manufacturing semiconductor substrates
US7485874B2 (en) * 2005-08-25 2009-02-03 Sumco Corporation Apparatus for manufacturing semiconductor substrates
US20070221870A1 (en) * 2006-03-21 2007-09-27 Olson Joseph C Technique for isocentric ion beam scanning
US7391038B2 (en) * 2006-03-21 2008-06-24 Varian Semiconductor Equipment Associates, Inc. Technique for isocentric ion beam scanning
US20100033115A1 (en) * 2008-08-11 2010-02-11 Cleland Marshall R High-current dc proton accelerator
WO2010019584A1 (en) * 2008-08-11 2010-02-18 Ion Beam Applications S.A. High-current dc proton accelerator
US8148922B2 (en) 2008-08-11 2012-04-03 Ion Beam Applications Sa High-current DC proton accelerator
US9084336B2 (en) 2011-02-08 2015-07-14 High Voltage Engineering Europa B.V. High current single-ended DC accelerator
CN103140012A (zh) * 2011-11-25 2013-06-05 中国原子能科学研究院 具有钛膜保护功能的电子辐照加速器

Also Published As

Publication number Publication date
NL7309412A (enrdf_load_stackoverflow) 1974-01-15
FR2193300A1 (enrdf_load_stackoverflow) 1974-02-15
FR2193300B1 (enrdf_load_stackoverflow) 1978-05-26
DE2335821A1 (de) 1974-01-31
GB1438851A (en) 1976-06-09
JPS4957299A (enrdf_load_stackoverflow) 1974-06-04

Similar Documents

Publication Publication Date Title
US3845312A (en) Particle accelerator producing a uniformly expanded particle beam of uniform cross-sectioned density
US6635883B2 (en) Gas cluster ion beam low mass ion filter
JP2648235B2 (ja) イオン銃
US4370176A (en) Process for fast droping of semiconductors
EP0223823B1 (en) Apparatus for scanning a high current ion beam with a constant angle of incidence
JPH0265033A (ja) 無線周波数のイオンビーム源
EP0282677A1 (en) Multi-cathode metal arc ion source
US6985553B2 (en) Ultra-short ion and neutron pulse production
US4766320A (en) Apparatus for ion implantation
US3585397A (en) Programmed fine ion implantation beam system
US4994164A (en) Metal ion implantation apparatus
Septier Production of ion beams of high intensity
JPH04264346A (ja) イオン注入用のプラズマソース装置
US5349196A (en) Ion implanting apparatus
JPS62108438A (ja) 空間電荷レンズを使用した高電流質量分光計
US3909305A (en) Ion implantation process
US3534385A (en) Process and apparatus for micro-machining and treatment of materials
JP2526941B2 (ja) イオン注入装置
Koval et al. Formation of high intensity ion beams with ballistic focusing
EP0112345B1 (en) X-ray source apparatus
EP0066175B1 (en) Ion implanter
JPS63279552A (ja) イオンビ−ム照射装置
JPS60202645A (ja) イオンビ−ム照射装置
Lemaıtre et al. Intense DC Cs+/Cs0 beam
Thopan et al. Design and simulation of a low-energy single ion irradiation system for micro/nano-biosample investigation