DE2326314C2 - Verfahren zur Herstellung von Reliefstrukturen - Google Patents

Verfahren zur Herstellung von Reliefstrukturen

Info

Publication number
DE2326314C2
DE2326314C2 DE2326314A DE2326314A DE2326314C2 DE 2326314 C2 DE2326314 C2 DE 2326314C2 DE 2326314 A DE2326314 A DE 2326314A DE 2326314 A DE2326314 A DE 2326314A DE 2326314 C2 DE2326314 C2 DE 2326314C2
Authority
DE
Germany
Prior art keywords
layer
radiation
protective layer
sensitive
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE2326314A
Other languages
German (de)
English (en)
Other versions
DE2326314A1 (de
Inventor
Reiner 8000 München Sigusch
Dietrich Dr. 8025 Unterhaching Widmann
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Priority to DE2326314A priority Critical patent/DE2326314C2/de
Priority to GB1919774A priority patent/GB1474231A/en
Priority to AT417174A priority patent/AT340694B/de
Priority to FR7417665A priority patent/FR2231038A2/fr
Priority to US05/471,952 priority patent/US3953877A/en
Priority to IT23058/74A priority patent/IT1046128B/it
Priority to LU70148A priority patent/LU70148A1/xx
Priority to NL7406905A priority patent/NL7406905A/xx
Priority to BE144619A priority patent/BE815392R/xx
Priority to JP49058330A priority patent/JPS5021678A/ja
Publication of DE2326314A1 publication Critical patent/DE2326314A1/de
Application granted granted Critical
Publication of DE2326314C2 publication Critical patent/DE2326314C2/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0387—Polyamides or polyimides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/018—Dielectrics
    • H01G4/06—Solid dielectrics
    • H01G4/14—Organic dielectrics
    • H01G4/145—Organic dielectrics vapour deposited
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N97/00—Electric solid-state thin-film or thick-film devices, not otherwise provided for
    • H10W20/40—
    • H10W74/131—
    • H10W74/47—
    • H10W72/5363—

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Manufacturing & Machinery (AREA)
  • Polyamides (AREA)
  • Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
  • Polymers With Sulfur, Phosphorus Or Metals In The Main Chain (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Formation Of Insulating Films (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
DE2326314A 1973-02-22 1973-05-23 Verfahren zur Herstellung von Reliefstrukturen Expired DE2326314C2 (de)

Priority Applications (10)

Application Number Priority Date Filing Date Title
DE2326314A DE2326314C2 (de) 1973-05-23 1973-05-23 Verfahren zur Herstellung von Reliefstrukturen
GB1919774A GB1474231A (en) 1973-05-23 1974-05-01 Electrical components
AT417174A AT340694B (de) 1973-05-23 1974-05-20 Verfahren zur herstellung von reliefstrukturen
US05/471,952 US3953877A (en) 1973-05-23 1974-05-21 Semiconductors covered by a polymeric heat resistant relief structure
FR7417665A FR2231038A2 (en) 1973-02-22 1974-05-21 Photohardenable layer - to form protective passivating layer with semi-conductors
IT23058/74A IT1046128B (it) 1973-05-23 1974-05-22 Procedimento per formare uno strato passivante con almeno un apertura di contatto
LU70148A LU70148A1 (cg-RX-API-DMAC10.html) 1973-05-23 1974-05-22
NL7406905A NL7406905A (cg-RX-API-DMAC10.html) 1973-05-23 1974-05-22
BE144619A BE815392R (fr) 1973-05-23 1974-05-22 Procede de fabrication de structures en relief
JP49058330A JPS5021678A (cg-RX-API-DMAC10.html) 1973-05-23 1974-05-23

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2326314A DE2326314C2 (de) 1973-05-23 1973-05-23 Verfahren zur Herstellung von Reliefstrukturen

Publications (2)

Publication Number Publication Date
DE2326314A1 DE2326314A1 (de) 1974-12-19
DE2326314C2 true DE2326314C2 (de) 1983-10-27

Family

ID=5881922

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2326314A Expired DE2326314C2 (de) 1973-02-22 1973-05-23 Verfahren zur Herstellung von Reliefstrukturen

Country Status (9)

Country Link
US (1) US3953877A (cg-RX-API-DMAC10.html)
JP (1) JPS5021678A (cg-RX-API-DMAC10.html)
AT (1) AT340694B (cg-RX-API-DMAC10.html)
BE (1) BE815392R (cg-RX-API-DMAC10.html)
DE (1) DE2326314C2 (cg-RX-API-DMAC10.html)
GB (1) GB1474231A (cg-RX-API-DMAC10.html)
IT (1) IT1046128B (cg-RX-API-DMAC10.html)
LU (1) LU70148A1 (cg-RX-API-DMAC10.html)
NL (1) NL7406905A (cg-RX-API-DMAC10.html)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4536240A (en) 1981-12-02 1985-08-20 Advanced Semiconductor Products, Inc. Method of forming thin optical membranes

Families Citing this family (24)

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JPS5421165A (en) * 1977-07-18 1979-02-17 Nec Corp Semiconductor device
US4644380A (en) * 1977-12-08 1987-02-17 University Of Pennsylvania Substance-sensitive electrical structures
JPS5952822B2 (ja) * 1978-04-14 1984-12-21 東レ株式会社 耐熱性感光材料
NO159729C (no) * 1978-11-01 1989-02-01 Coates Brothers & Co Fremgangsmaate for fremstilling av et moenster av loddemetall paa et lag elektrisk ledende metall baaret av et ikke-ledende underlag.
JPS5568659A (en) * 1978-11-20 1980-05-23 Hitachi Ltd Semiconductor device and manufacturing method thereof
US4329419A (en) * 1980-09-03 1982-05-11 E. I. Du Pont De Nemours And Company Polymeric heat resistant photopolymerizable composition for semiconductors and capacitors
US4414312A (en) * 1980-09-03 1983-11-08 E. I. Du Pont De Nemours & Co. Photopolymerizable polyamide ester resin compositions containing an oxygen scavenger
US4410612A (en) * 1980-09-03 1983-10-18 E. I. Du Pont De Nemours And Company Electrical device formed from polymeric heat resistant photopolymerizable composition
US4369247A (en) * 1980-09-03 1983-01-18 E. I. Du Pont De Nemours And Company Process of producing relief structures using polyamide ester resins
JPS57202608A (en) * 1981-06-08 1982-12-11 Fujikura Ltd Self-adhesive insulated wire
JPS57202607A (en) * 1981-06-08 1982-12-11 Fujikura Ltd Self-adhesive insulated wire
US4558333A (en) * 1981-07-09 1985-12-10 Canon Kabushiki Kaisha Liquid jet recording head
DE3132452A1 (de) * 1981-08-17 1983-02-24 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen einer nach dem galvanischen aufbau von metallischen strukturen planaren strukturebene
US4483759A (en) * 1982-07-02 1984-11-20 Thermedics, Inc. Actinic radiation cured polyurethane acrylic copolymer
JPS6012744A (ja) * 1983-07-01 1985-01-23 Hitachi Ltd 半導体装置
US5051814A (en) * 1987-04-15 1991-09-24 The Board Of Trustees Of The Leland Stanford Junior University Method of providing stress-free thermally-conducting attachment of two bodies
US5250388A (en) * 1988-05-31 1993-10-05 Westinghouse Electric Corp. Production of highly conductive polymers for electronic circuits
JPH02105418A (ja) * 1988-10-14 1990-04-18 Mitsubishi Electric Corp 樹脂封止型半導体装置
US5187241A (en) * 1990-05-15 1993-02-16 International Business Machines Corporation Isoimide modifications of a polyimide and reaction thereof with nucleophiles
DE4217688A1 (de) * 1992-05-29 1993-12-02 Basf Lacke & Farben Durch Einwirkung von Strahlung vernetzendes Gemisch und dessen Verwendung zur Herstellung hochtemperaturbeständiger Reliefstrukturen
US5929512A (en) * 1997-03-18 1999-07-27 Jacobs; Richard L. Urethane encapsulated integrated circuits and compositions therefor
JP4530284B2 (ja) * 2004-10-07 2010-08-25 信越化学工業株式会社 ポリイミド系光硬化性樹脂組成物並びにパターン形成方法及び基板保護用皮膜
JP4771412B2 (ja) * 2005-02-14 2011-09-14 信越化学工業株式会社 感光性樹脂及びその製造方法
JP4386454B2 (ja) * 2006-08-22 2009-12-16 信越化学工業株式会社 アルカリ水溶液に可溶な感光性ポリイミド樹脂、該樹脂を含む組成物、及び該組成物から得られる膜

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3179634A (en) * 1962-01-26 1965-04-20 Du Pont Aromatic polyimides and the process for preparing them
US3249829A (en) * 1962-05-18 1966-05-03 Transitron Electronic Corp Encapsulated diode assembly
US3332912A (en) * 1963-12-18 1967-07-25 Ibm Component with standoff and method of making same
US3405224A (en) * 1966-04-20 1968-10-08 Nippon Electric Co Sealed enclosure for electronic device
US3495996A (en) * 1966-05-13 1970-02-17 Ibm Ceramic composition,improved electronic devices employing same,and method of fabrication
GB1230421A (cg-RX-API-DMAC10.html) * 1967-09-15 1971-05-05
NL6810338A (cg-RX-API-DMAC10.html) * 1968-07-19 1970-01-21
US3684592A (en) * 1969-09-30 1972-08-15 Westinghouse Electric Corp Passivated surfaces and protective coatings for semiconductor devices and processes for producing the same
US3694707A (en) * 1970-03-27 1972-09-26 Tokyo Shibaura Electric Co Semiconductor device
US3653959A (en) * 1970-04-14 1972-04-04 Grace W R & Co Encapsulating and potting composition and process
NL177718C (nl) * 1973-02-22 1985-11-01 Siemens Ag Werkwijze ter vervaardiging van reliefstructuren uit warmte-bestendige polymeren.

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
NICHTS-ERMITTELT

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4536240A (en) 1981-12-02 1985-08-20 Advanced Semiconductor Products, Inc. Method of forming thin optical membranes

Also Published As

Publication number Publication date
BE815392R (fr) 1974-11-22
IT1046128B (it) 1980-06-30
JPS5021678A (cg-RX-API-DMAC10.html) 1975-03-07
GB1474231A (en) 1977-05-18
US3953877A (en) 1976-04-27
DE2326314A1 (de) 1974-12-19
NL7406905A (cg-RX-API-DMAC10.html) 1974-11-26
LU70148A1 (cg-RX-API-DMAC10.html) 1975-02-24
AT340694B (de) 1977-12-27
ATA417174A (de) 1977-04-15

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Legal Events

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OD Request for examination
8126 Change of the secondary classification

Free format text: H01G 4/14 H01L 21/02 H01L 21/47 H01L 21/312 G03C 1/70

8181 Inventor (new situation)

Free format text: SIGUSCH, REINER, 8000 MUENCHEN, DE WIDMANN, DIETRICH, DR., 8025 UNTERHACHING, DE

AF Is addition to no.

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