ATA417174A - Verfahren zur herstellung von reliefstrukturen - Google Patents
Verfahren zur herstellung von reliefstrukturenInfo
- Publication number
- ATA417174A ATA417174A AT417174A AT417174A ATA417174A AT A417174 A ATA417174 A AT A417174A AT 417174 A AT417174 A AT 417174A AT 417174 A AT417174 A AT 417174A AT A417174 A ATA417174 A AT A417174A
- Authority
- AT
- Austria
- Prior art keywords
- production
- relief structures
- relief
- structures
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
- G03F7/0387—Polyamides or polyimides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/14—Organic dielectrics
- H01G4/145—Organic dielectrics vapour deposited
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/293—Organic, e.g. plastic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3157—Partial encapsulation or coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
- H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N97/00—Electric solid-state thin-film or thick-film devices, not otherwise provided for
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12044—OLED
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/1901—Structure
- H01L2924/1904—Component type
- H01L2924/19041—Component type being a capacitor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Manufacturing & Machinery (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Polyamides (AREA)
- Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
- Polymers With Sulfur, Phosphorus Or Metals In The Main Chain (AREA)
- Electrodes Of Semiconductors (AREA)
- Formation Of Insulating Films (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE2326314A DE2326314C2 (de) | 1973-05-23 | 1973-05-23 | Verfahren zur Herstellung von Reliefstrukturen |
Publications (2)
Publication Number | Publication Date |
---|---|
ATA417174A true ATA417174A (de) | 1977-04-15 |
AT340694B AT340694B (de) | 1977-12-27 |
Family
ID=5881922
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT417174A AT340694B (de) | 1973-05-23 | 1974-05-20 | Verfahren zur herstellung von reliefstrukturen |
Country Status (9)
Country | Link |
---|---|
US (1) | US3953877A (de) |
JP (1) | JPS5021678A (de) |
AT (1) | AT340694B (de) |
BE (1) | BE815392R (de) |
DE (1) | DE2326314C2 (de) |
GB (1) | GB1474231A (de) |
IT (1) | IT1046128B (de) |
LU (1) | LU70148A1 (de) |
NL (1) | NL7406905A (de) |
Families Citing this family (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5421165A (en) * | 1977-07-18 | 1979-02-17 | Nec Corp | Semiconductor device |
US4644380A (en) * | 1977-12-08 | 1987-02-17 | University Of Pennsylvania | Substance-sensitive electrical structures |
JPS5952822B2 (ja) * | 1978-04-14 | 1984-12-21 | 東レ株式会社 | 耐熱性感光材料 |
NO159729C (no) * | 1978-11-01 | 1989-02-01 | Coates Brothers & Co | Fremgangsmaate for fremstilling av et moenster av loddemetall paa et lag elektrisk ledende metall baaret av et ikke-ledende underlag. |
JPS5568659A (en) * | 1978-11-20 | 1980-05-23 | Hitachi Ltd | Semiconductor device and manufacturing method thereof |
US4414312A (en) * | 1980-09-03 | 1983-11-08 | E. I. Du Pont De Nemours & Co. | Photopolymerizable polyamide ester resin compositions containing an oxygen scavenger |
US4329419A (en) * | 1980-09-03 | 1982-05-11 | E. I. Du Pont De Nemours And Company | Polymeric heat resistant photopolymerizable composition for semiconductors and capacitors |
US4410612A (en) * | 1980-09-03 | 1983-10-18 | E. I. Du Pont De Nemours And Company | Electrical device formed from polymeric heat resistant photopolymerizable composition |
US4369247A (en) * | 1980-09-03 | 1983-01-18 | E. I. Du Pont De Nemours And Company | Process of producing relief structures using polyamide ester resins |
JPS57202607A (en) * | 1981-06-08 | 1982-12-11 | Fujikura Ltd | Self-adhesive insulated wire |
JPS57202608A (en) * | 1981-06-08 | 1982-12-11 | Fujikura Ltd | Self-adhesive insulated wire |
US4558333A (en) * | 1981-07-09 | 1985-12-10 | Canon Kabushiki Kaisha | Liquid jet recording head |
DE3132452A1 (de) * | 1981-08-17 | 1983-02-24 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum herstellen einer nach dem galvanischen aufbau von metallischen strukturen planaren strukturebene |
US4536240A (en) | 1981-12-02 | 1985-08-20 | Advanced Semiconductor Products, Inc. | Method of forming thin optical membranes |
US4483759A (en) * | 1982-07-02 | 1984-11-20 | Thermedics, Inc. | Actinic radiation cured polyurethane acrylic copolymer |
JPS6012744A (ja) * | 1983-07-01 | 1985-01-23 | Hitachi Ltd | 半導体装置 |
US5051814A (en) * | 1987-04-15 | 1991-09-24 | The Board Of Trustees Of The Leland Stanford Junior University | Method of providing stress-free thermally-conducting attachment of two bodies |
US5250388A (en) * | 1988-05-31 | 1993-10-05 | Westinghouse Electric Corp. | Production of highly conductive polymers for electronic circuits |
JPH02105418A (ja) * | 1988-10-14 | 1990-04-18 | Mitsubishi Electric Corp | 樹脂封止型半導体装置 |
US5187241A (en) * | 1990-05-15 | 1993-02-16 | International Business Machines Corporation | Isoimide modifications of a polyimide and reaction thereof with nucleophiles |
DE4217688A1 (de) * | 1992-05-29 | 1993-12-02 | Basf Lacke & Farben | Durch Einwirkung von Strahlung vernetzendes Gemisch und dessen Verwendung zur Herstellung hochtemperaturbeständiger Reliefstrukturen |
US5929512A (en) * | 1997-03-18 | 1999-07-27 | Jacobs; Richard L. | Urethane encapsulated integrated circuits and compositions therefor |
JP4530284B2 (ja) * | 2004-10-07 | 2010-08-25 | 信越化学工業株式会社 | ポリイミド系光硬化性樹脂組成物並びにパターン形成方法及び基板保護用皮膜 |
JP4771412B2 (ja) * | 2005-02-14 | 2011-09-14 | 信越化学工業株式会社 | 感光性樹脂及びその製造方法 |
JP4386454B2 (ja) * | 2006-08-22 | 2009-12-16 | 信越化学工業株式会社 | アルカリ水溶液に可溶な感光性ポリイミド樹脂、該樹脂を含む組成物、及び該組成物から得られる膜 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3179634A (en) * | 1962-01-26 | 1965-04-20 | Du Pont | Aromatic polyimides and the process for preparing them |
US3249829A (en) * | 1962-05-18 | 1966-05-03 | Transitron Electronic Corp | Encapsulated diode assembly |
US3332912A (en) * | 1963-12-18 | 1967-07-25 | Ibm | Component with standoff and method of making same |
US3405224A (en) * | 1966-04-20 | 1968-10-08 | Nippon Electric Co | Sealed enclosure for electronic device |
US3495996A (en) * | 1966-05-13 | 1970-02-17 | Ibm | Ceramic composition,improved electronic devices employing same,and method of fabrication |
GB1230421A (de) * | 1967-09-15 | 1971-05-05 | ||
NL6810338A (de) * | 1968-07-19 | 1970-01-21 | ||
US3684592A (en) * | 1969-09-30 | 1972-08-15 | Westinghouse Electric Corp | Passivated surfaces and protective coatings for semiconductor devices and processes for producing the same |
US3694707A (en) * | 1970-03-27 | 1972-09-26 | Tokyo Shibaura Electric Co | Semiconductor device |
US3653959A (en) * | 1970-04-14 | 1972-04-04 | Grace W R & Co | Encapsulating and potting composition and process |
NL177718C (nl) * | 1973-02-22 | 1985-11-01 | Siemens Ag | Werkwijze ter vervaardiging van reliefstructuren uit warmte-bestendige polymeren. |
-
1973
- 1973-05-23 DE DE2326314A patent/DE2326314C2/de not_active Expired
-
1974
- 1974-05-01 GB GB1919774A patent/GB1474231A/en not_active Expired
- 1974-05-20 AT AT417174A patent/AT340694B/de not_active IP Right Cessation
- 1974-05-21 US US05/471,952 patent/US3953877A/en not_active Expired - Lifetime
- 1974-05-22 LU LU70148A patent/LU70148A1/xx unknown
- 1974-05-22 IT IT23058/74A patent/IT1046128B/it active
- 1974-05-22 NL NL7406905A patent/NL7406905A/xx not_active Application Discontinuation
- 1974-05-22 BE BE144619A patent/BE815392R/xx not_active IP Right Cessation
- 1974-05-23 JP JP49058330A patent/JPS5021678A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
US3953877A (en) | 1976-04-27 |
DE2326314C2 (de) | 1983-10-27 |
JPS5021678A (de) | 1975-03-07 |
AT340694B (de) | 1977-12-27 |
LU70148A1 (de) | 1975-02-24 |
BE815392R (fr) | 1974-11-22 |
IT1046128B (it) | 1980-06-30 |
GB1474231A (en) | 1977-05-18 |
NL7406905A (de) | 1974-11-26 |
DE2326314A1 (de) | 1974-12-19 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
AT330469B (de) | Verfahren zur herstellung von reliefstrukturen | |
AT334331B (de) | Verfahren zur herstellung von alpha- acyloxycarbonylverbindungen | |
AT340694B (de) | Verfahren zur herstellung von reliefstrukturen | |
ATA600574A (de) | Verfahren zur herstellung von polylactonen | |
AT333954B (de) | Verfahren zur herstellung von alpha-6-deoxytetracyclinen | |
AT330352B (de) | Verfahren zur herstellung von 7beta-amino-7alpha-methoxy -3- cephemestern | |
AT334875B (de) | Verfahren zur herstellung von benzotrifluorid | |
AT340919B (de) | Verfahren zur herstellung von triacetonamin | |
AT352406B (de) | Verfahren zur herstellung von reliefstrukturen | |
AT334869B (de) | Verfahren zur herstellung von 3-ketoglutarsaure | |
ATA425874A (de) | Verfahren zur herstellung von 2-arylprorionaldehyden | |
AT340043B (de) | Verfahren zur herstellung von alfa-6-deoxytetracyclinen | |
AT338264B (de) | Verfahren zur herstellung von triacetonamin | |
AT335993B (de) | Verfahren zur herstellung von atherpolycarbonsauren | |
AT335059B (de) | Verfahren zur herstellung von alfa-6-deoxy-tetracyclin | |
AT338763B (de) | Verfahren zur herstellung von alfa-athinylbenzhydrolen | |
DD114089A5 (de) | Verfahren zur herstellung von halogenhaltigen tertiaeren phosphinoziden | |
AT338982B (de) | Verfahren zur herstellung von 17beta-oxalylsteroiden | |
AT330166B (de) | Verfahren zur herstellung von neuen 2-aminoindanderivaten | |
AT337371B (de) | Verfahren zur herstellung von neuen cardenoliden | |
AT335990B (de) | Verfahren zur herstellung von 6-methyl-5-hepten-2-on | |
AT329043B (de) | Verfahren zur herstellung von 1-nitro-antrachinon | |
AT335415B (de) | Verfahren zur herstellung von epsilon-aminocapronsaureamid | |
AT334369B (de) | Verfahren zur herstellung von oxadiazolinon-derivaten | |
CH553748A (de) | Verfahren zur herstellung von aminoadamantan-derivaten. |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
ELA | Expired due to lapse of time |