DE2325922C2 - Aus Schieberegistern aufgebaute Speicheranordnung mit dynamischer Umordnung - Google Patents
Aus Schieberegistern aufgebaute Speicheranordnung mit dynamischer UmordnungInfo
- Publication number
- DE2325922C2 DE2325922C2 DE2325922A DE2325922A DE2325922C2 DE 2325922 C2 DE2325922 C2 DE 2325922C2 DE 2325922 A DE2325922 A DE 2325922A DE 2325922 A DE2325922 A DE 2325922A DE 2325922 C2 DE2325922 C2 DE 2325922C2
- Authority
- DE
- Germany
- Prior art keywords
- shift register
- shift
- memory arrangement
- data
- block
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000015654 memory Effects 0.000 title claims description 21
- 230000008707 rearrangement Effects 0.000 title claims description 14
- 239000004065 semiconductor Substances 0.000 claims description 5
- 239000000758 substrate Substances 0.000 claims description 5
- 230000003321 amplification Effects 0.000 claims description 2
- 238000003199 nucleic acid amplification method Methods 0.000 claims description 2
- 230000006833 reintegration Effects 0.000 claims 1
- 238000009792 diffusion process Methods 0.000 description 18
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- 230000005669 field effect Effects 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 230000002457 bidirectional effect Effects 0.000 description 5
- 230000008929 regeneration Effects 0.000 description 5
- 238000011069 regeneration method Methods 0.000 description 5
- 239000000377 silicon dioxide Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 238000006073 displacement reaction Methods 0.000 description 2
- 238000012856 packing Methods 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000004070 electrodeposition Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/007—Digital input from or digital output to memories of the shift register type
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
- G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
- G11C19/282—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements with charge storage in a depletion layer, i.e. charge coupled devices [CCD]
- G11C19/285—Peripheral circuits, e.g. for writing into the first stage; for reading-out of the last stage
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
- G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
- G11C19/287—Organisation of a multiplicity of shift registers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
- H01L27/1057—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components comprising charge coupled devices [CCD] or charge injection devices [CID]
Landscapes
- Engineering & Computer Science (AREA)
- Theoretical Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Human Computer Interaction (AREA)
- General Engineering & Computer Science (AREA)
- Shift Register Type Memory (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Memory System (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US26834272A | 1972-07-03 | 1972-07-03 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE2325922A1 DE2325922A1 (de) | 1974-01-24 |
| DE2325922C2 true DE2325922C2 (de) | 1983-03-31 |
Family
ID=23022543
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE2325922A Expired DE2325922C2 (de) | 1972-07-03 | 1973-05-22 | Aus Schieberegistern aufgebaute Speicheranordnung mit dynamischer Umordnung |
Country Status (7)
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL7311429A (nl) * | 1973-08-20 | 1975-02-24 | Philips Nv | Opneeminrichting uitgevoerd met informatie- opneemplaatsen in een halfgeleiderlichaam. |
| DE2427173B2 (de) * | 1974-06-05 | 1976-10-21 | Siemens AG, 1000 Berlin und 8000 München | Einrichtung zum verschieben von ladungen nach freier wahl in eine vorgegebene richtung oder in die entgegengesetzte richtung und zum speichern von ladungen mit einer ladungsgekoppelten ladungsverschiebeanordnung |
| US3986059A (en) * | 1975-04-18 | 1976-10-12 | Bell Telephone Laboratories, Incorporated | Electrically pulsed charge regenerator for semiconductor charge coupled devices |
| JPS5230180A (en) * | 1975-09-02 | 1977-03-07 | Matsushita Electric Ind Co Ltd | Electric charge transmission unit |
| JPS52140239A (en) * | 1976-05-19 | 1977-11-22 | Nippon Telegr & Teleph Corp <Ntt> | Electronic charge reproduction of electric charge coupling type shift regist er |
| US4139910A (en) * | 1976-12-06 | 1979-02-13 | International Business Machines Corporation | Charge coupled device memory with method of doubled storage capacity and independent of process parameters and temperature |
| JPS5755174Y2 (US08124317-20120228-C00034.png) * | 1977-06-03 | 1982-11-29 | ||
| DE2808604A1 (de) * | 1978-02-28 | 1979-08-30 | Siemens Ag | Aus ctd-leitungen bestehende koppelschaltung |
| US4152781A (en) * | 1978-06-30 | 1979-05-01 | International Business Machines Corporation | Multiplexed and interlaced charge-coupled serial-parallel-serial memory device |
| US4165539A (en) * | 1978-06-30 | 1979-08-21 | International Business Machines Corporation | Bidirectional serial-parallel-serial charge-coupled device |
| FR2436468A1 (fr) * | 1978-09-15 | 1980-04-11 | Thomson Csf | Element de memoire dynamique a transfert de charges, et application notamment a un registre a decalage |
| JPH0584664U (ja) * | 1991-04-16 | 1993-11-16 | 株式会社ユニー機工 | 収納容器 |
| KR102538702B1 (ko) * | 2018-04-23 | 2023-06-01 | 에스케이하이닉스 주식회사 | 반도체장치 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1810602B2 (de) * | 1968-11-23 | 1978-11-16 | Telefonbau Und Normalzeit Gmbh, 6000 Frankfurt | Schaltungsanordnung fuer taktgesteuerte Umlaufspeicher,insbesondere fuer zeitmultiplex betriebene Fernsprechanlagen |
| US3670313A (en) * | 1971-03-22 | 1972-06-13 | Ibm | Dynamically ordered magnetic bubble shift register memory |
-
1972
- 1972-07-03 US US00268342A patent/US3789247A/en not_active Expired - Lifetime
-
1973
- 1973-05-22 DE DE2325922A patent/DE2325922C2/de not_active Expired
- 1973-06-04 GB GB2653973A patent/GB1386729A/en not_active Expired
- 1973-06-12 IT IT25164/73A patent/IT988995B/it active
- 1973-06-12 CA CA173,855A patent/CA982238A/en not_active Expired
- 1973-06-13 FR FR7322354A patent/FR2191208B1/fr not_active Expired
- 1973-06-22 JP JP6997273A patent/JPS532304B2/ja not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| FR2191208B1 (US08124317-20120228-C00034.png) | 1976-06-18 |
| JPS4959544A (US08124317-20120228-C00034.png) | 1974-06-10 |
| GB1386729A (en) | 1975-03-12 |
| FR2191208A1 (US08124317-20120228-C00034.png) | 1974-02-01 |
| DE2325922A1 (de) | 1974-01-24 |
| US3789247A (en) | 1974-01-29 |
| IT988995B (it) | 1975-04-30 |
| JPS532304B2 (US08124317-20120228-C00034.png) | 1978-01-26 |
| CA982238A (en) | 1976-01-20 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OD | Request for examination | ||
| 8128 | New person/name/address of the agent |
Representative=s name: GAUGEL, H., DIPL.-ING., PAT.-ASS., 7030 BOEBLINGEN |
|
| D2 | Grant after examination | ||
| 8364 | No opposition during term of opposition | ||
| 8339 | Ceased/non-payment of the annual fee |