FR2191208B1 - - Google Patents

Info

Publication number
FR2191208B1
FR2191208B1 FR7322354A FR7322354A FR2191208B1 FR 2191208 B1 FR2191208 B1 FR 2191208B1 FR 7322354 A FR7322354 A FR 7322354A FR 7322354 A FR7322354 A FR 7322354A FR 2191208 B1 FR2191208 B1 FR 2191208B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7322354A
Other versions
FR2191208A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of FR2191208A1 publication Critical patent/FR2191208A1/fr
Application granted granted Critical
Publication of FR2191208B1 publication Critical patent/FR2191208B1/fr
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/007—Digital input from or digital output to memories of the shift register type
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • G11C19/282—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements with charge storage in a depletion layer, i.e. charge coupled devices [CCD]
    • G11C19/285—Peripheral circuits, e.g. for writing into the first stage; for reading-out of the last stage
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • G11C19/287—Organisation of a multiplicity of shift registers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
    • H01L27/1057—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components comprising charge coupled devices [CCD] or charge injection devices [CID]

Landscapes

  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Human Computer Interaction (AREA)
  • General Engineering & Computer Science (AREA)
  • Shift Register Type Memory (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Memory System (AREA)
FR7322354A 1972-07-03 1973-06-13 Expired FR2191208B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US26834272A 1972-07-03 1972-07-03

Publications (2)

Publication Number Publication Date
FR2191208A1 FR2191208A1 (fr) 1974-02-01
FR2191208B1 true FR2191208B1 (fr) 1976-06-18

Family

ID=23022543

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7322354A Expired FR2191208B1 (fr) 1972-07-03 1973-06-13

Country Status (7)

Country Link
US (1) US3789247A (fr)
JP (1) JPS532304B2 (fr)
CA (1) CA982238A (fr)
DE (1) DE2325922C2 (fr)
FR (1) FR2191208B1 (fr)
GB (1) GB1386729A (fr)
IT (1) IT988995B (fr)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL7311429A (nl) * 1973-08-20 1975-02-24 Philips Nv Opneeminrichting uitgevoerd met informatie- opneemplaatsen in een halfgeleiderlichaam.
DE2427173B2 (de) * 1974-06-05 1976-10-21 Siemens AG, 1000 Berlin und 8000 München Einrichtung zum verschieben von ladungen nach freier wahl in eine vorgegebene richtung oder in die entgegengesetzte richtung und zum speichern von ladungen mit einer ladungsgekoppelten ladungsverschiebeanordnung
US3986059A (en) * 1975-04-18 1976-10-12 Bell Telephone Laboratories, Incorporated Electrically pulsed charge regenerator for semiconductor charge coupled devices
JPS5230180A (en) * 1975-09-02 1977-03-07 Matsushita Electric Ind Co Ltd Electric charge transmission unit
JPS52140239A (en) * 1976-05-19 1977-11-22 Nippon Telegr & Teleph Corp <Ntt> Electronic charge reproduction of electric charge coupling type shift regist er
US4139910A (en) * 1976-12-06 1979-02-13 International Business Machines Corporation Charge coupled device memory with method of doubled storage capacity and independent of process parameters and temperature
JPS5755174Y2 (fr) * 1977-06-03 1982-11-29
DE2808604A1 (de) * 1978-02-28 1979-08-30 Siemens Ag Aus ctd-leitungen bestehende koppelschaltung
US4152781A (en) * 1978-06-30 1979-05-01 International Business Machines Corporation Multiplexed and interlaced charge-coupled serial-parallel-serial memory device
US4165539A (en) * 1978-06-30 1979-08-21 International Business Machines Corporation Bidirectional serial-parallel-serial charge-coupled device
FR2436468A1 (fr) * 1978-09-15 1980-04-11 Thomson Csf Element de memoire dynamique a transfert de charges, et application notamment a un registre a decalage
JPH0584664U (ja) * 1991-04-16 1993-11-16 株式会社ユニー機工 収納容器
KR102538702B1 (ko) * 2018-04-23 2023-06-01 에스케이하이닉스 주식회사 반도체장치

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1810602B2 (de) * 1968-11-23 1978-11-16 Telefonbau Und Normalzeit Gmbh, 6000 Frankfurt Schaltungsanordnung fuer taktgesteuerte Umlaufspeicher,insbesondere fuer zeitmultiplex betriebene Fernsprechanlagen
US3670313A (en) * 1971-03-22 1972-06-13 Ibm Dynamically ordered magnetic bubble shift register memory

Also Published As

Publication number Publication date
IT988995B (it) 1975-04-30
FR2191208A1 (fr) 1974-02-01
JPS532304B2 (fr) 1978-01-26
JPS4959544A (fr) 1974-06-10
GB1386729A (en) 1975-03-12
DE2325922C2 (de) 1983-03-31
US3789247A (en) 1974-01-29
DE2325922A1 (de) 1974-01-24
CA982238A (en) 1976-01-20

Similar Documents

Publication Publication Date Title
FR2186574B1 (fr)
JPS4983156U (fr)
JPS4986608U (fr)
CH579803A5 (fr)
BG18514A1 (fr)
BG19300A1 (fr)
BG21183A3 (fr)
BG21212A3 (fr)
BG21213A3 (fr)
BG21238A3 (fr)
BG21461A1 (fr)
BG21622A1 (fr)
BG22201A1 (fr)
BG22277A1 (fr)
BG22847A3 (fr)
BG25981A3 (fr)
CH1386673A4 (fr)
CH545744A (fr)
CH559260A5 (fr)
CH559379A5 (fr)
CH559433A5 (fr)
CH559466A5 (fr)
CH560628A5 (fr)
CH560728A5 (fr)
CH560971A5 (fr)

Legal Events

Date Code Title Description
ST Notification of lapse