DE2323471C2 - Schaltung mit veränderbarem Widerstand - Google Patents

Schaltung mit veränderbarem Widerstand

Info

Publication number
DE2323471C2
DE2323471C2 DE2323471A DE2323471A DE2323471C2 DE 2323471 C2 DE2323471 C2 DE 2323471C2 DE 2323471 A DE2323471 A DE 2323471A DE 2323471 A DE2323471 A DE 2323471A DE 2323471 C2 DE2323471 C2 DE 2323471C2
Authority
DE
Germany
Prior art keywords
drain
source
field effect
insulating
layer field
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE2323471A
Other languages
German (de)
English (en)
Other versions
DE2323471A1 (de
Inventor
Takaaki Kanagawa Yamada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP4757872A external-priority patent/JPS5323989B2/ja
Priority claimed from JP7298072U external-priority patent/JPS4932537U/ja
Application filed by Sony Corp filed Critical Sony Corp
Publication of DE2323471A1 publication Critical patent/DE2323471A1/de
Application granted granted Critical
Publication of DE2323471C2 publication Critical patent/DE2323471C2/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H11/00—Networks using active elements
    • H03H11/02—Multiple-port networks
    • H03H11/24—Frequency-independent attenuators
    • H03H11/245—Frequency-independent attenuators using field-effect transistor
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03G—CONTROL OF AMPLIFICATION
    • H03G1/00—Details of arrangements for controlling amplification
    • H03G1/0005—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal
    • H03G1/0035—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal using continuously variable impedance elements
    • H03G1/007—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal using continuously variable impedance elements using field-effect transistors [FET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/605—Source, drain, or gate electrodes for FETs comprising highly resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
    • H10D84/817—Combinations of field-effect devices and resistors only

Landscapes

  • Networks Using Active Elements (AREA)
  • Junction Field-Effect Transistors (AREA)
DE2323471A 1972-05-13 1973-05-09 Schaltung mit veränderbarem Widerstand Expired DE2323471C2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP4757872A JPS5323989B2 (enExample) 1972-05-13 1972-05-13
JP7298072U JPS4932537U (enExample) 1972-06-20 1972-06-20

Publications (2)

Publication Number Publication Date
DE2323471A1 DE2323471A1 (de) 1973-11-29
DE2323471C2 true DE2323471C2 (de) 1985-09-12

Family

ID=26387754

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2323471A Expired DE2323471C2 (de) 1972-05-13 1973-05-09 Schaltung mit veränderbarem Widerstand

Country Status (7)

Country Link
AT (1) AT354518B (enExample)
CA (1) CA999061A (enExample)
DE (1) DE2323471C2 (enExample)
FR (1) FR2184815B1 (enExample)
GB (1) GB1431199A (enExample)
IT (1) IT989208B (enExample)
NL (1) NL7306701A (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57196627A (en) * 1981-05-29 1982-12-02 Hitachi Ltd Electronic circuit device
KR940005293B1 (ko) * 1991-05-23 1994-06-15 삼성전자 주식회사 게이트와 드레인이 중첩된 모오스 트랜지스터의 제조방법 및 그 구조
US10510823B2 (en) * 2016-10-12 2019-12-17 Mediatek Inc. Impedance circuit with poly-resistor
US10535651B2 (en) * 2016-10-12 2020-01-14 Mediatek Inc. Impedance circuit with poly-resistor
US10461702B2 (en) 2017-04-19 2019-10-29 Mediatek Inc. Amplifier circuit having poly resistor with biased depletion region
EP3451398A1 (en) * 2017-09-01 2019-03-06 MediaTek Inc. Impedance circuit with poly-resistor

Also Published As

Publication number Publication date
AT354518B (de) 1979-01-10
CA999061A (en) 1976-10-26
IT989208B (it) 1975-05-20
NL7306701A (enExample) 1973-11-15
FR2184815B1 (enExample) 1977-09-02
FR2184815A1 (enExample) 1973-12-28
GB1431199A (en) 1976-04-07
ATA417673A (de) 1979-06-15
DE2323471A1 (de) 1973-11-29

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Legal Events

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OD Request for examination
D2 Grant after examination
Q176 The application caused the suspense of an application

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