DE2320563B2 - Vierschichttriode - Google Patents

Vierschichttriode

Info

Publication number
DE2320563B2
DE2320563B2 DE19732320563 DE2320563A DE2320563B2 DE 2320563 B2 DE2320563 B2 DE 2320563B2 DE 19732320563 DE19732320563 DE 19732320563 DE 2320563 A DE2320563 A DE 2320563A DE 2320563 B2 DE2320563 B2 DE 2320563B2
Authority
DE
Germany
Prior art keywords
area
layer
cross
areas
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
DE19732320563
Other languages
German (de)
English (en)
Other versions
DE2320563A1 (de
Inventor
Takeshi Sagamihara Kanagawa Matsushita (Japan)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of DE2320563A1 publication Critical patent/DE2320563A1/de
Publication of DE2320563B2 publication Critical patent/DE2320563B2/de
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
    • H10D62/148—Cathode regions of thyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/60—Gate-turn-off devices 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
    • H10D62/142—Anode regions of thyristors or collector regions of gated bipolar-mode devices

Landscapes

  • Thyristors (AREA)
  • Bipolar Transistors (AREA)
DE19732320563 1972-04-20 1973-04-21 Vierschichttriode Ceased DE2320563B2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP47039764A JPS493583A (enrdf_load_stackoverflow) 1972-04-20 1972-04-20

Publications (2)

Publication Number Publication Date
DE2320563A1 DE2320563A1 (de) 1973-10-25
DE2320563B2 true DE2320563B2 (de) 1976-04-01

Family

ID=12561993

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19732320563 Ceased DE2320563B2 (de) 1972-04-20 1973-04-21 Vierschichttriode

Country Status (6)

Country Link
JP (1) JPS493583A (enrdf_load_stackoverflow)
CA (1) CA982701A (enrdf_load_stackoverflow)
DE (1) DE2320563B2 (enrdf_load_stackoverflow)
FR (1) FR2185860B1 (enrdf_load_stackoverflow)
GB (1) GB1425957A (enrdf_load_stackoverflow)
NL (1) NL7305643A (enrdf_load_stackoverflow)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5147583B2 (enrdf_load_stackoverflow) * 1972-12-29 1976-12-15
AT377645B (de) * 1972-12-29 1985-04-10 Sony Corp Halbleiterbauteil
JPS5754969B2 (enrdf_load_stackoverflow) * 1974-04-04 1982-11-20
JPS5753672B2 (enrdf_load_stackoverflow) * 1974-04-10 1982-11-13
JPS57658B2 (enrdf_load_stackoverflow) * 1974-04-16 1982-01-07
JPS5714064B2 (enrdf_load_stackoverflow) * 1974-04-25 1982-03-20
JPS5718710B2 (enrdf_load_stackoverflow) * 1974-05-10 1982-04-17
JPS5648983B2 (enrdf_load_stackoverflow) * 1974-05-10 1981-11-19
DE2904424C2 (de) * 1979-02-06 1982-09-02 Siemens AG, 1000 Berlin und 8000 München Thyristor mit Steuerung durch Feldeffekttransistor
JPS6043668B2 (ja) * 1979-07-06 1985-09-30 株式会社日立製作所 半導体装置
JPS5630758A (en) * 1979-08-21 1981-03-27 Nippon Telegr & Teleph Corp <Ntt> Negative feedback type bipolar transistor
FR2803101B1 (fr) * 1999-12-24 2002-04-12 St Microelectronics Sa Procede de fabrication de composants de puissance verticaux
CN113380883B (zh) * 2021-06-08 2024-09-06 深圳市槟城电子股份有限公司 半导体放电管及供电电路

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3391287A (en) * 1965-07-30 1968-07-02 Westinghouse Electric Corp Guard junctions for p-nu junction semiconductor devices
GB1196576A (en) * 1968-03-06 1970-07-01 Westinghouse Electric Corp High Current Gate Controlled Switches

Also Published As

Publication number Publication date
JPS493583A (enrdf_load_stackoverflow) 1974-01-12
DE2320563A1 (de) 1973-10-25
FR2185860A1 (enrdf_load_stackoverflow) 1974-01-04
CA982701A (en) 1976-01-27
NL7305643A (enrdf_load_stackoverflow) 1973-10-23
GB1425957A (en) 1976-02-25
FR2185860B1 (enrdf_load_stackoverflow) 1977-08-19

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Legal Events

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