GB1425957A - Gate controlled switches - Google Patents

Gate controlled switches

Info

Publication number
GB1425957A
GB1425957A GB1869673A GB1869673A GB1425957A GB 1425957 A GB1425957 A GB 1425957A GB 1869673 A GB1869673 A GB 1869673A GB 1869673 A GB1869673 A GB 1869673A GB 1425957 A GB1425957 A GB 1425957A
Authority
GB
United Kingdom
Prior art keywords
region
islands
emitter region
thyristor
april
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB1869673A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of GB1425957A publication Critical patent/GB1425957A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/141Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
    • H10D62/148Cathode regions of thyristors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00Thyristors
    • H10D18/60Gate-turn-off devices 
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/141Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
    • H10D62/142Anode regions of thyristors or collector regions of gated bipolar-mode devices

Landscapes

  • Thyristors (AREA)
  • Bipolar Transistors (AREA)
GB1869673A 1972-04-20 1973-04-18 Gate controlled switches Expired GB1425957A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP47039764A JPS493583A (enrdf_load_stackoverflow) 1972-04-20 1972-04-20

Publications (1)

Publication Number Publication Date
GB1425957A true GB1425957A (en) 1976-02-25

Family

ID=12561993

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1869673A Expired GB1425957A (en) 1972-04-20 1973-04-18 Gate controlled switches

Country Status (6)

Country Link
JP (1) JPS493583A (enrdf_load_stackoverflow)
CA (1) CA982701A (enrdf_load_stackoverflow)
DE (1) DE2320563B2 (enrdf_load_stackoverflow)
FR (1) FR2185860B1 (enrdf_load_stackoverflow)
GB (1) GB1425957A (enrdf_load_stackoverflow)
NL (1) NL7305643A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113380883A (zh) * 2021-06-08 2021-09-10 深圳市槟城电子股份有限公司 半导体放电管及供电电路

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5147583B2 (enrdf_load_stackoverflow) * 1972-12-29 1976-12-15
AT377645B (de) * 1972-12-29 1985-04-10 Sony Corp Halbleiterbauteil
JPS5754969B2 (enrdf_load_stackoverflow) * 1974-04-04 1982-11-20
JPS5753672B2 (enrdf_load_stackoverflow) * 1974-04-10 1982-11-13
JPS57658B2 (enrdf_load_stackoverflow) * 1974-04-16 1982-01-07
JPS5714064B2 (enrdf_load_stackoverflow) * 1974-04-25 1982-03-20
JPS5718710B2 (enrdf_load_stackoverflow) * 1974-05-10 1982-04-17
JPS5648983B2 (enrdf_load_stackoverflow) * 1974-05-10 1981-11-19
DE2904424C2 (de) * 1979-02-06 1982-09-02 Siemens AG, 1000 Berlin und 8000 München Thyristor mit Steuerung durch Feldeffekttransistor
JPS6043668B2 (ja) * 1979-07-06 1985-09-30 株式会社日立製作所 半導体装置
JPS5630758A (en) * 1979-08-21 1981-03-27 Nippon Telegr & Teleph Corp <Ntt> Negative feedback type bipolar transistor
FR2803101B1 (fr) * 1999-12-24 2002-04-12 St Microelectronics Sa Procede de fabrication de composants de puissance verticaux

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3391287A (en) * 1965-07-30 1968-07-02 Westinghouse Electric Corp Guard junctions for p-nu junction semiconductor devices
GB1196576A (en) * 1968-03-06 1970-07-01 Westinghouse Electric Corp High Current Gate Controlled Switches

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113380883A (zh) * 2021-06-08 2021-09-10 深圳市槟城电子股份有限公司 半导体放电管及供电电路
CN113380883B (zh) * 2021-06-08 2024-09-06 深圳市槟城电子股份有限公司 半导体放电管及供电电路

Also Published As

Publication number Publication date
NL7305643A (enrdf_load_stackoverflow) 1973-10-23
JPS493583A (enrdf_load_stackoverflow) 1974-01-12
FR2185860B1 (enrdf_load_stackoverflow) 1977-08-19
CA982701A (en) 1976-01-27
FR2185860A1 (enrdf_load_stackoverflow) 1974-01-04
DE2320563B2 (de) 1976-04-01
DE2320563A1 (de) 1973-10-25

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee