DE2311915B2 - Verfahren zur herstellung von elektrisch leitenden verbindungen zwischen source- und drain-bereichen in integrierten mos-schaltkreisen - Google Patents

Verfahren zur herstellung von elektrisch leitenden verbindungen zwischen source- und drain-bereichen in integrierten mos-schaltkreisen

Info

Publication number
DE2311915B2
DE2311915B2 DE19732311915 DE2311915A DE2311915B2 DE 2311915 B2 DE2311915 B2 DE 2311915B2 DE 19732311915 DE19732311915 DE 19732311915 DE 2311915 A DE2311915 A DE 2311915A DE 2311915 B2 DE2311915 B2 DE 2311915B2
Authority
DE
Germany
Prior art keywords
source
electrically conductive
gate
region
diffusion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
DE19732311915
Other languages
German (de)
English (en)
Other versions
DE2311915A1 (de
Inventor
Shigeru Ibaragi Arita (Japan)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP47024912A external-priority patent/JPS5128515B2/ja
Priority claimed from JP47026255A external-priority patent/JPS4894376A/ja
Priority claimed from JP47026256A external-priority patent/JPS5232557B2/ja
Priority claimed from JP47027785A external-priority patent/JPS5143950B2/ja
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Publication of DE2311915A1 publication Critical patent/DE2311915A1/de
Publication of DE2311915B2 publication Critical patent/DE2311915B2/de
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/535—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including internal interconnections, e.g. cross-under constructions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
    • H01L27/0727—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with diodes, or capacitors or resistors
    • H01L27/0733—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with diodes, or capacitors or resistors in combination with capacitors only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B20/00—Read-only memory [ROM] devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/02—Contacts, special
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/053—Field effect transistors fets
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/122—Polycrystalline

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
DE19732311915 1972-03-10 1973-03-09 Verfahren zur herstellung von elektrisch leitenden verbindungen zwischen source- und drain-bereichen in integrierten mos-schaltkreisen Ceased DE2311915B2 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP47024912A JPS5128515B2 (US07754267-20100713-C00021.png) 1972-03-10 1972-03-10
JP47026255A JPS4894376A (US07754267-20100713-C00021.png) 1972-03-14 1972-03-14
JP47026256A JPS5232557B2 (US07754267-20100713-C00021.png) 1972-03-14 1972-03-14
JP47027785A JPS5143950B2 (US07754267-20100713-C00021.png) 1972-03-17 1972-03-17

Publications (2)

Publication Number Publication Date
DE2311915A1 DE2311915A1 (de) 1973-09-13
DE2311915B2 true DE2311915B2 (de) 1976-10-21

Family

ID=27458216

Family Applications (4)

Application Number Title Priority Date Filing Date
DE2311913A Pending DE2311913A1 (de) 1972-03-10 1973-03-09 Verfahren zur herstellung von matrixkreisen mit parallelgattern
DE19732311915 Ceased DE2311915B2 (de) 1972-03-10 1973-03-09 Verfahren zur herstellung von elektrisch leitenden verbindungen zwischen source- und drain-bereichen in integrierten mos-schaltkreisen
DE2312414A Expired DE2312414C2 (de) 1972-03-10 1973-03-13 Verfahren zur Herstellung von integrierten MOSFET-Schaltkreisen
DE19732312413 Ceased DE2312413B2 (de) 1972-03-10 1973-03-13 Verfahren zur herstellung eines matrixschaltkreises

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE2311913A Pending DE2311913A1 (de) 1972-03-10 1973-03-09 Verfahren zur herstellung von matrixkreisen mit parallelgattern

Family Applications After (2)

Application Number Title Priority Date Filing Date
DE2312414A Expired DE2312414C2 (de) 1972-03-10 1973-03-13 Verfahren zur Herstellung von integrierten MOSFET-Schaltkreisen
DE19732312413 Ceased DE2312413B2 (de) 1972-03-10 1973-03-13 Verfahren zur herstellung eines matrixschaltkreises

Country Status (5)

Country Link
US (3) US3865650A (US07754267-20100713-C00021.png)
CA (2) CA1009379A (US07754267-20100713-C00021.png)
DE (4) DE2311913A1 (US07754267-20100713-C00021.png)
FR (4) FR2175819B1 (US07754267-20100713-C00021.png)
GB (4) GB1357515A (US07754267-20100713-C00021.png)

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US4145701A (en) * 1974-09-11 1979-03-20 Hitachi, Ltd. Semiconductor device
JPS5713079B2 (US07754267-20100713-C00021.png) * 1975-02-10 1982-03-15
US4028694A (en) * 1975-06-10 1977-06-07 International Business Machines Corporation A/D and D/A converter using C-2C ladder network
US4183093A (en) * 1975-09-04 1980-01-08 Hitachi, Ltd. Semiconductor integrated circuit device composed of insulated gate field-effect transistor
JPS5851427B2 (ja) * 1975-09-04 1983-11-16 株式会社日立製作所 絶縁ゲ−ト型リ−ド・オンリ−・メモリの製造方法
US4059826A (en) * 1975-12-29 1977-11-22 Texas Instruments Incorporated Semiconductor memory array with field effect transistors programmable by alteration of threshold voltage
US4240092A (en) * 1976-09-13 1980-12-16 Texas Instruments Incorporated Random access memory cell with different capacitor and transistor oxide thickness
JPS598065B2 (ja) * 1976-01-30 1984-02-22 松下電子工業株式会社 Ｍｏｓ集積回路の製造方法
JPS5333076A (en) * 1976-09-09 1978-03-28 Toshiba Corp Production of mos type integrated circuit
US5168075A (en) * 1976-09-13 1992-12-01 Texas Instruments Incorporated Random access memory cell with implanted capacitor region
US5434438A (en) * 1976-09-13 1995-07-18 Texas Instruments Inc. Random access memory cell with a capacitor
US4142176A (en) * 1976-09-27 1979-02-27 Mostek Corporation Series read only memory structure
NL185376C (nl) * 1976-10-25 1990-03-16 Philips Nv Werkwijze ter vervaardiging van een halfgeleiderinrichting.
US4600933A (en) * 1976-12-14 1986-07-15 Standard Microsystems Corporation Semiconductor integrated circuit structure with selectively modified insulation layer
US4081896A (en) * 1977-04-11 1978-04-04 Rca Corporation Method of making a substrate contact for an integrated circuit
DE2726014A1 (de) * 1977-06-08 1978-12-21 Siemens Ag Dynamisches speicherelement
US4142199A (en) * 1977-06-24 1979-02-27 International Business Machines Corporation Bucket brigade device and process
US4171229A (en) * 1977-06-24 1979-10-16 International Business Machines Corporation Improved process to form bucket brigade device
US4195354A (en) * 1977-08-16 1980-03-25 Dubinin Viktor P Semiconductor matrix for integrated read-only storage
US4317275A (en) * 1977-10-11 1982-03-02 Mostek Corporation Method for making a depletion controlled switch
US4230504B1 (en) * 1978-04-27 1997-03-04 Texas Instruments Inc Method of making implant programmable N-channel rom
US4290184A (en) * 1978-03-20 1981-09-22 Texas Instruments Incorporated Method of making post-metal programmable MOS read only memory
US4591891A (en) * 1978-06-05 1986-05-27 Texas Instruments Incorporated Post-metal electron beam programmable MOS read only memory
US4268950A (en) * 1978-06-05 1981-05-26 Texas Instruments Incorporated Post-metal ion implant programmable MOS read only memory
US4208727A (en) * 1978-06-15 1980-06-17 Texas Instruments Incorporated Semiconductor read only memory using MOS diodes
US4342100A (en) * 1979-01-08 1982-07-27 Texas Instruments Incorporated Implant programmable metal gate MOS read only memory
CH631048B (fr) * 1979-07-13 Ebauches Electroniques Sa Convertisseur de tension alternative en tension continue.
US4280271A (en) * 1979-10-11 1981-07-28 Texas Instruments Incorporated Three level interconnect process for manufacture of integrated circuit devices
US4319396A (en) * 1979-12-28 1982-03-16 Bell Telephone Laboratories, Incorporated Method for fabricating IGFET integrated circuits
US4423432A (en) * 1980-01-28 1983-12-27 Rca Corporation Apparatus for decoding multiple input lines
US4608751A (en) * 1980-04-07 1986-09-02 Texas Instruments Incorporated Method of making dynamic memory array
US4476478A (en) * 1980-04-24 1984-10-09 Tokyo Shibaura Denki Kabushiki Kaisha Semiconductor read only memory and method of making the same
US4410904A (en) * 1980-10-20 1983-10-18 American Microsystems, Inc. Notched cell ROM
JPS57109190A (en) * 1980-12-26 1982-07-07 Fujitsu Ltd Semiconductor storage device and its manufacture
GB2102623B (en) * 1981-06-30 1985-04-11 Tokyo Shibaura Electric Co Method of manufacturing a semiconductors memory device
US4387503A (en) * 1981-08-13 1983-06-14 Mostek Corporation Method for programming circuit elements in integrated circuits
JPS58188155A (ja) * 1982-04-27 1983-11-02 Seiko Epson Corp ２層構造ｒｏｍ集積回路
JPS60179998A (ja) * 1984-02-28 1985-09-13 Fujitsu Ltd 電圧検出回路
IT1227821B (it) * 1988-12-29 1991-05-07 Sgs Thomson Microelectronics Struttura di catena di contatti per il controllo della difettosita' di circuiti di memorie eprom
DE60334405D1 (de) 2002-12-27 2010-11-11 Semiconductor Energy Lab Halbleiterbauelement und dieses verwendendeanzeigeeinrichtung

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US3408543A (en) * 1964-06-01 1968-10-29 Hitachi Ltd Combination capacitor and fieldeffect transistor
US3443176A (en) * 1966-03-31 1969-05-06 Ibm Low resistivity semiconductor underpass connector and fabrication method therefor
US3541543A (en) * 1966-07-25 1970-11-17 Texas Instruments Inc Binary decoder
US3519504A (en) * 1967-01-13 1970-07-07 Ibm Method for etching silicon nitride films with sharp edge definition
US3387286A (en) * 1967-07-14 1968-06-04 Ibm Field-effect transistor memory
FR2014382B1 (US07754267-20100713-C00021.png) * 1968-06-28 1974-03-15 Motorola Inc
DE1811136A1 (de) * 1968-11-27 1970-11-05 Telefunken Patent Verfahren zum Herstellen eines Planartransistors
US3591836A (en) * 1969-03-04 1971-07-06 North American Rockwell Field effect conditionally switched capacitor
US3604107A (en) * 1969-04-17 1971-09-14 Collins Radio Co Doped oxide field effect transistors
NL161924C (nl) * 1969-07-03 1980-03-17 Philips Nv Veldeffecttransistor met ten minste twee geisoleerde stuurelektroden.
US3739238A (en) * 1969-09-24 1973-06-12 Tokyo Shibaura Electric Co Semiconductor device with a field effect transistor
US3608189A (en) * 1970-01-07 1971-09-28 Gen Electric Method of making complementary field-effect transistors by single step diffusion
DE2007627B2 (de) * 1970-02-19 1973-03-22 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Verfahren zum herstellen einer integrierten halbleiterschaltung
NL165869C (nl) * 1970-09-25 1981-05-15 Philips Nv Analoog schuifregister.
DE2051503A1 (de) 1970-10-20 1972-05-04 Siemens Ag Halbleiterbauelement, insbesondere als Widerstand für Halbleiterspeicher
US3740732A (en) * 1971-08-12 1973-06-19 Texas Instruments Inc Dynamic data storage cell
US3747200A (en) * 1972-03-31 1973-07-24 Motorola Inc Integrated circuit fabrication method

Also Published As

Publication number Publication date
CA978661A (en) 1975-11-25
DE2312414C2 (de) 1981-11-12
DE2312413A1 (de) 1973-09-27
FR2175819A1 (US07754267-20100713-C00021.png) 1973-10-26
CA1009379A (en) 1977-04-26
FR2176825B1 (US07754267-20100713-C00021.png) 1976-09-10
US3865650A (en) 1975-02-11
GB1430301A (en) 1976-03-31
GB1357516A (en) 1974-06-26
US3874955A (en) 1975-04-01
FR2175961B1 (US07754267-20100713-C00021.png) 1977-08-12
DE2311915A1 (de) 1973-09-13
DE2311913A1 (de) 1973-09-20
FR2175960B1 (US07754267-20100713-C00021.png) 1977-08-12
US3865651A (en) 1975-02-11
DE2312414A1 (de) 1973-09-27
GB1375355A (US07754267-20100713-C00021.png) 1974-11-27
FR2175819B1 (US07754267-20100713-C00021.png) 1977-08-19
FR2175961A1 (US07754267-20100713-C00021.png) 1973-10-26
FR2176825A1 (US07754267-20100713-C00021.png) 1973-11-02
GB1357515A (en) 1974-06-26
DE2312413B2 (de) 1976-03-18
FR2175960A1 (US07754267-20100713-C00021.png) 1973-10-26

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Legal Events

Date Code Title Description
8235 Patent refused