DE2306866C2 - Dreidimensional adressierter Speicher - Google Patents
Dreidimensional adressierter SpeicherInfo
- Publication number
- DE2306866C2 DE2306866C2 DE2306866A DE2306866A DE2306866C2 DE 2306866 C2 DE2306866 C2 DE 2306866C2 DE 2306866 A DE2306866 A DE 2306866A DE 2306866 A DE2306866 A DE 2306866A DE 2306866 C2 DE2306866 C2 DE 2306866C2
- Authority
- DE
- Germany
- Prior art keywords
- line
- decoder
- transistor
- driver
- potential
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000015654 memory Effects 0.000 title claims description 33
- 210000004027 cell Anatomy 0.000 description 54
- 238000010586 diagram Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000012856 packing Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 210000000352 storage cell Anatomy 0.000 description 1
- 230000003319 supportive effect Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/411—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only
- G11C11/4116—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only with at least one cell access via separately connected emittors of said transistors or via multiple emittors, e.g. T2L, ECL
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C8/00—Arrangements for selecting an address in a digital store
- G11C8/16—Multiple access memory array, e.g. addressing one storage element via at least two independent addressing line groups
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Static Random-Access Memory (AREA)
- Read Only Memory (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US25022572A | 1972-05-04 | 1972-05-04 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE2306866A1 DE2306866A1 (de) | 1973-11-15 |
| DE2306866C2 true DE2306866C2 (de) | 1982-12-30 |
Family
ID=22946854
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE2306866A Expired DE2306866C2 (de) | 1972-05-04 | 1973-02-13 | Dreidimensional adressierter Speicher |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US3781828A (enExample) |
| JP (1) | JPS4924040A (enExample) |
| CA (1) | CA1023857A (enExample) |
| DE (1) | DE2306866C2 (enExample) |
| FR (1) | FR2182970B1 (enExample) |
| GB (1) | GB1379185A (enExample) |
| IT (1) | IT981197B (enExample) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4021786A (en) * | 1975-10-30 | 1977-05-03 | Fairchild Camera And Instrument Corporation | Memory cell circuit and semiconductor structure therefore |
| DE2719726A1 (de) * | 1976-05-03 | 1977-11-24 | Texas Instruments Inc | Speicheranordnung |
| FR2414778A1 (fr) * | 1978-01-13 | 1979-08-10 | Thomson Csf | Element de memoire statique a acces aleatoire |
| JPS5562586A (en) * | 1978-10-30 | 1980-05-12 | Fujitsu Ltd | Semiconductor memory device |
| US4193127A (en) * | 1979-01-02 | 1980-03-11 | International Business Machines Corporation | Simultaneous read/write cell |
| JPS55142487A (en) * | 1979-04-25 | 1980-11-07 | Hitachi Ltd | Bipolar memory circuit |
| JPS6034189B2 (ja) * | 1980-04-08 | 1985-08-07 | 富士通株式会社 | 半導体記憶装置 |
| US4387445A (en) * | 1981-02-24 | 1983-06-07 | International Business Machines Corporation | Random access memory cell |
| JPS6059677B2 (ja) * | 1981-08-19 | 1985-12-26 | 富士通株式会社 | 半導体記憶装置 |
| DE3348201C2 (en) * | 1982-10-18 | 1988-12-22 | Mitsubishi Denki K.K., Tokio/Tokyo, Jp | Semiconductor memory device |
| EP0257987B1 (en) * | 1986-08-22 | 1991-11-06 | Fujitsu Limited | Semiconductor memory device |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| BE561661A (enExample) * | 1956-10-17 | |||
| FR1370290A (fr) * | 1962-09-22 | 1964-08-21 | Ferranti Ltd | Dispositif d'emmagasinage d'informations |
| US3423737A (en) * | 1965-06-21 | 1969-01-21 | Ibm | Nondestructive read transistor memory cell |
| US3436738A (en) * | 1966-06-28 | 1969-04-01 | Texas Instruments Inc | Plural emitter type active element memory |
| US3618052A (en) * | 1969-12-05 | 1971-11-02 | Cogar Corp | Bistable memory with predetermined turn-on state |
-
1972
- 1972-05-04 US US00250225A patent/US3781828A/en not_active Expired - Lifetime
-
1973
- 1973-02-13 DE DE2306866A patent/DE2306866C2/de not_active Expired
- 1973-03-08 IT IT21307/73A patent/IT981197B/it active
- 1973-03-30 JP JP48035905A patent/JPS4924040A/ja active Pending
- 1973-03-30 FR FR7313778*A patent/FR2182970B1/fr not_active Expired
- 1973-04-13 CA CA169,272A patent/CA1023857A/en not_active Expired
- 1973-04-24 GB GB1940273A patent/GB1379185A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| GB1379185A (en) | 1975-01-02 |
| FR2182970B1 (enExample) | 1976-05-21 |
| IT981197B (it) | 1974-10-10 |
| US3781828A (en) | 1973-12-25 |
| FR2182970A1 (enExample) | 1973-12-14 |
| JPS4924040A (enExample) | 1974-03-04 |
| CA1023857A (en) | 1978-01-03 |
| DE2306866A1 (de) | 1973-11-15 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OD | Request for examination | ||
| 8181 | Inventor (new situation) |
Free format text: PLATT, STEVEN, UNDERHILL, VT., US POMERANZ, JEHOSHUA NAPHTALI, SUFFERN, N.Y., US |
|
| D2 | Grant after examination | ||
| 8339 | Ceased/non-payment of the annual fee |