GB1379185A - Digital data stores - Google Patents
Digital data storesInfo
- Publication number
- GB1379185A GB1379185A GB1940273A GB1940273A GB1379185A GB 1379185 A GB1379185 A GB 1379185A GB 1940273 A GB1940273 A GB 1940273A GB 1940273 A GB1940273 A GB 1940273A GB 1379185 A GB1379185 A GB 1379185A
- Authority
- GB
- United Kingdom
- Prior art keywords
- cells
- row
- transistor
- cell
- bit line
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000011159 matrix material Substances 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/411—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only
- G11C11/4116—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only with at least one cell access via separately connected emittors of said transistors or via multiple emittors, e.g. T2L, ECL
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C8/00—Arrangements for selecting an address in a digital store
- G11C8/16—Multiple access memory array, e.g. addressing one storage element via at least two independent addressing line groups
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Static Random-Access Memory (AREA)
- Read Only Memory (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US25022572A | 1972-05-04 | 1972-05-04 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1379185A true GB1379185A (en) | 1975-01-02 |
Family
ID=22946854
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB1940273A Expired GB1379185A (en) | 1972-05-04 | 1973-04-24 | Digital data stores |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US3781828A (enExample) |
| JP (1) | JPS4924040A (enExample) |
| CA (1) | CA1023857A (enExample) |
| DE (1) | DE2306866C2 (enExample) |
| FR (1) | FR2182970B1 (enExample) |
| GB (1) | GB1379185A (enExample) |
| IT (1) | IT981197B (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4481609A (en) * | 1981-08-19 | 1984-11-06 | Fujitsu Limited | Semiconductor memory miniaturized by line groups and staggered cells |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4021786A (en) * | 1975-10-30 | 1977-05-03 | Fairchild Camera And Instrument Corporation | Memory cell circuit and semiconductor structure therefore |
| DE2719726A1 (de) * | 1976-05-03 | 1977-11-24 | Texas Instruments Inc | Speicheranordnung |
| FR2414778A1 (fr) * | 1978-01-13 | 1979-08-10 | Thomson Csf | Element de memoire statique a acces aleatoire |
| JPS5562586A (en) * | 1978-10-30 | 1980-05-12 | Fujitsu Ltd | Semiconductor memory device |
| US4193127A (en) * | 1979-01-02 | 1980-03-11 | International Business Machines Corporation | Simultaneous read/write cell |
| JPS55142487A (en) * | 1979-04-25 | 1980-11-07 | Hitachi Ltd | Bipolar memory circuit |
| JPS6034189B2 (ja) * | 1980-04-08 | 1985-08-07 | 富士通株式会社 | 半導体記憶装置 |
| US4387445A (en) * | 1981-02-24 | 1983-06-07 | International Business Machines Corporation | Random access memory cell |
| DE3348201C2 (en) * | 1982-10-18 | 1988-12-22 | Mitsubishi Denki K.K., Tokio/Tokyo, Jp | Semiconductor memory device |
| EP0257987B1 (en) * | 1986-08-22 | 1991-11-06 | Fujitsu Limited | Semiconductor memory device |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| BE561661A (enExample) * | 1956-10-17 | |||
| FR1370290A (fr) * | 1962-09-22 | 1964-08-21 | Ferranti Ltd | Dispositif d'emmagasinage d'informations |
| US3423737A (en) * | 1965-06-21 | 1969-01-21 | Ibm | Nondestructive read transistor memory cell |
| US3436738A (en) * | 1966-06-28 | 1969-04-01 | Texas Instruments Inc | Plural emitter type active element memory |
| US3618052A (en) * | 1969-12-05 | 1971-11-02 | Cogar Corp | Bistable memory with predetermined turn-on state |
-
1972
- 1972-05-04 US US00250225A patent/US3781828A/en not_active Expired - Lifetime
-
1973
- 1973-02-13 DE DE2306866A patent/DE2306866C2/de not_active Expired
- 1973-03-08 IT IT21307/73A patent/IT981197B/it active
- 1973-03-30 JP JP48035905A patent/JPS4924040A/ja active Pending
- 1973-03-30 FR FR7313778*A patent/FR2182970B1/fr not_active Expired
- 1973-04-13 CA CA169,272A patent/CA1023857A/en not_active Expired
- 1973-04-24 GB GB1940273A patent/GB1379185A/en not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4481609A (en) * | 1981-08-19 | 1984-11-06 | Fujitsu Limited | Semiconductor memory miniaturized by line groups and staggered cells |
Also Published As
| Publication number | Publication date |
|---|---|
| DE2306866C2 (de) | 1982-12-30 |
| FR2182970B1 (enExample) | 1976-05-21 |
| IT981197B (it) | 1974-10-10 |
| US3781828A (en) | 1973-12-25 |
| FR2182970A1 (enExample) | 1973-12-14 |
| JPS4924040A (enExample) | 1974-03-04 |
| CA1023857A (en) | 1978-01-03 |
| DE2306866A1 (de) | 1973-11-15 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US3675218A (en) | Independent read-write monolithic memory array | |
| US4125877A (en) | Dual port random access memory storage cell | |
| US3638204A (en) | Semiconductive cell for a storage having a plurality of simultaneously accessible locations | |
| GB1374058A (en) | Monolithic memory | |
| GB1466478A (en) | Regeneration of dynamic monolithic memories | |
| EP0031488A2 (en) | Memory cell and its use in a random access matrix memory system | |
| US3729719A (en) | Stored charge storage cell using a non latching scr type device | |
| JPS5846794B2 (ja) | メモリ・アレイ | |
| GB1379185A (en) | Digital data stores | |
| EP0023792B1 (en) | Semiconductor memory device including integrated injection logic memory cells | |
| GB1250109A (enExample) | ||
| GB1535250A (en) | Memory system | |
| GB1293711A (en) | Memory circuit | |
| US3863229A (en) | Scr (or scs) memory array with internal and external load resistors | |
| US3986178A (en) | Integrated injection logic random access memory | |
| US3863232A (en) | Associative array | |
| US3688264A (en) | Operation of field-effect transistor circuits having substantial distributed capacitance | |
| US4367538A (en) | Semiconductor memory device | |
| GB1409595A (en) | Storage array | |
| GB1334307A (en) | Monolithic memory system | |
| GB1260603A (en) | Storage circuit | |
| GB1162109A (en) | Semi Conductor Data and Storage Devices and Data Stores Employing Such Devices | |
| US3774177A (en) | Nonvolatile random access memory cell using an alterable threshold field effect write transistor | |
| KR900017171A (ko) | 반도체집적회로 | |
| US5396469A (en) | SRAM memory requiring reduced voltage swing during write |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| PCNP | Patent ceased through non-payment of renewal fee |