DE2264126A1 - Halbleiterdiode und verfahren zu ihrer herstellung - Google Patents
Halbleiterdiode und verfahren zu ihrer herstellungInfo
- Publication number
- DE2264126A1 DE2264126A1 DE2264126A DE2264126A DE2264126A1 DE 2264126 A1 DE2264126 A1 DE 2264126A1 DE 2264126 A DE2264126 A DE 2264126A DE 2264126 A DE2264126 A DE 2264126A DE 2264126 A1 DE2264126 A1 DE 2264126A1
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor
- semiconductor substrate
- semiconductor layer
- junction
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 257
- 238000004519 manufacturing process Methods 0.000 title claims description 14
- 238000000034 method Methods 0.000 title description 8
- 239000000758 substrate Substances 0.000 claims description 93
- 239000012535 impurity Substances 0.000 claims description 17
- 238000002161 passivation Methods 0.000 claims description 8
- 238000005468 ion implantation Methods 0.000 claims description 6
- 150000002500 ions Chemical class 0.000 claims description 6
- 239000005360 phosphosilicate glass Substances 0.000 claims description 2
- 230000001419 dependent effect Effects 0.000 claims 1
- 230000015556 catabolic process Effects 0.000 description 17
- 238000009792 diffusion process Methods 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- -1 Phosphorus ions Chemical class 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 229910001415 sodium ion Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/60—Capacitors
- H10D1/62—Capacitors having potential barriers
- H10D1/64—Variable-capacitance diodes, e.g. varactors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3157—Partial encapsulation or coating
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Bipolar Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP162972A JPS5316670B2 (enrdf_load_stackoverflow) | 1971-12-29 | 1971-12-29 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE2264126A1 true DE2264126A1 (de) | 1973-07-19 |
Family
ID=11506813
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE2264126A Pending DE2264126A1 (de) | 1971-12-29 | 1972-12-29 | Halbleiterdiode und verfahren zu ihrer herstellung |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JPS5316670B2 (enrdf_load_stackoverflow) |
| DE (1) | DE2264126A1 (enrdf_load_stackoverflow) |
| GB (1) | GB1382730A (enrdf_load_stackoverflow) |
| NL (1) | NL7217867A (enrdf_load_stackoverflow) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3005302A1 (de) * | 1980-02-13 | 1981-08-20 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Varaktor- oder mischerdiode |
| DE3005301A1 (de) * | 1980-02-13 | 1981-08-20 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Varaktor- oder mischerdiode |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54182536U (enrdf_load_stackoverflow) * | 1978-06-14 | 1979-12-24 | ||
| DE2833319C2 (de) * | 1978-07-29 | 1982-10-07 | Philips Patentverwaltung Gmbh, 2000 Hamburg | Kapazitätsdiode |
| JP4126872B2 (ja) | 2000-12-12 | 2008-07-30 | サンケン電気株式会社 | 定電圧ダイオード |
| WO2013014481A1 (fr) | 2011-07-26 | 2013-01-31 | Arcelormittal Investigación Y Desarrollo Sl | Pièce d'acier soudée préalablement mise en forme à chaud à très haute résistance mécanique et procédé de fabrication |
-
1971
- 1971-12-29 JP JP162972A patent/JPS5316670B2/ja not_active Expired
-
1972
- 1972-12-28 GB GB5990972A patent/GB1382730A/en not_active Expired
- 1972-12-29 NL NL7217867A patent/NL7217867A/xx unknown
- 1972-12-29 DE DE2264126A patent/DE2264126A1/de active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3005302A1 (de) * | 1980-02-13 | 1981-08-20 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Varaktor- oder mischerdiode |
| DE3005301A1 (de) * | 1980-02-13 | 1981-08-20 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Varaktor- oder mischerdiode |
| US4541000A (en) * | 1980-02-13 | 1985-09-10 | Telefunken Electronic Gmbh | Varactor or mixer diode with surrounding substrate metal contact and top surface isolation |
| US4916716A (en) * | 1980-02-13 | 1990-04-10 | Telefunken Electronic Gmbh | Varactor diode |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS4874171A (enrdf_load_stackoverflow) | 1973-10-05 |
| GB1382730A (en) | 1975-02-05 |
| JPS5316670B2 (enrdf_load_stackoverflow) | 1978-06-02 |
| NL7217867A (enrdf_load_stackoverflow) | 1973-07-03 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE2214935C2 (de) | Integrierte MOS-Schaltung | |
| EP0025854B1 (de) | Verfahren zum Herstellen von bipolaren Transistoren | |
| EP0186058B1 (de) | Feldeffekttransistor mit hoher Spannungsfestigkeit | |
| DE2655341C2 (de) | Halbleiteranordnung mit einer Passivierungsschicht aus Halbleitermaterial und Verfahren zu ihrer Herstellung | |
| DE2160427C3 (enrdf_load_stackoverflow) | ||
| DE2547828B2 (de) | Verfahren zur Herstellung eines Speicherelements mit einem Doppelgate-Isolierschicht-Feldeffekttransistor | |
| DE3131727A1 (de) | "mos-feldeffekttransistor und verfahren zu seiner hestellung" | |
| CH661150A5 (de) | Verfahren zum erzeugen einer schmalen nut in einem substratgebiet, insbesondere einem halbleitersubstratgebiet. | |
| DE2241600A1 (de) | Hochspannungs-p-n-uebergang und seine anwendung in halbleiterschaltelementen, sowie verfahren zu seiner herstellung | |
| DE2805442A1 (de) | Verfahren zum herstellen eines schottky-sperrschicht-halbleiterbauelementes | |
| DE2605830A1 (de) | Verfahren zur herstellung von halbleiterbauelementen | |
| DE2133184A1 (de) | Verfahren zum Herstellen von Halbleiterbauteilen | |
| DE2328090A1 (de) | Halbleiterkondensator mit grosser kapazitaet und verfahren zu seiner herstellung | |
| DE2550346A1 (de) | Verfahren zum herstellen eines elektrisch isolierenden bereiches in dem halbleiterkoerper eines halbleiterbauelements | |
| DE3888663T2 (de) | Bipolare Halbleiteranordnung mit einer leitenden Rekombinationsschicht. | |
| DE2953394C2 (enrdf_load_stackoverflow) | ||
| EP0095658A2 (de) | Planares Halbleiterbauelement und Verfahren zur Herstellung | |
| DE2341374A1 (de) | Verfahren zur herstellung eines halbleiterbauelements in mesastruktur | |
| DE2264126A1 (de) | Halbleiterdiode und verfahren zu ihrer herstellung | |
| DE2904480B2 (de) | Integrierte Halbleiterschaltung und Verfahren zu ihrem Herstellen | |
| DE2141695A1 (de) | Verfahren zur Herstellung eines monolithischen Halbleiterbauelementes | |
| DE69025784T2 (de) | Nichtflüchtige Speicher-Halbleiteranordnung | |
| EP0472880A2 (de) | Verfahren zur Herstellung eines Thyristors mit definiertem Lateral-Widerstand | |
| DE69834096T2 (de) | Verfahren zur herstellung einer halbleiteranordnung mit schottky-übergang | |
| DE2649134A1 (de) | Verfahren zur ionenimplantation in halbleitersubstrate |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OHW | Rejection |