DE2260584B2 - Eimerkettenschaltung und Verfahren zu ihrer Herstellung - Google Patents

Eimerkettenschaltung und Verfahren zu ihrer Herstellung

Info

Publication number
DE2260584B2
DE2260584B2 DE2260584A DE2260584A DE2260584B2 DE 2260584 B2 DE2260584 B2 DE 2260584B2 DE 2260584 A DE2260584 A DE 2260584A DE 2260584 A DE2260584 A DE 2260584A DE 2260584 B2 DE2260584 B2 DE 2260584B2
Authority
DE
Germany
Prior art keywords
chain circuit
bucket chain
layer
island
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
DE2260584A
Other languages
German (de)
English (en)
Other versions
DE2260584A1 (de
Inventor
Tetsuo Kohza Ando
Yoshimi Hatano Hirata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of DE2260584A1 publication Critical patent/DE2260584A1/de
Publication of DE2260584B2 publication Critical patent/DE2260584B2/de
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/891—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D44/00, e.g. integration of charge-coupled devices [CCD] or charge injection devices [CID
    • H10D84/895—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D44/00, e.g. integration of charge-coupled devices [CCD] or charge injection devices [CID comprising bucket-brigade charge-coupled devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/18—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages
    • G11C19/182—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes
    • G11C19/184—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes with field-effect transistors, e.g. MOS-FET
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/18—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages
    • G11C19/182—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes
    • G11C19/184—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes with field-effect transistors, e.g. MOS-FET
    • G11C19/186—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes with field-effect transistors, e.g. MOS-FET using only one transistor per capacitor, e.g. bucket brigade shift register
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
DE2260584A 1971-12-11 1972-12-11 Eimerkettenschaltung und Verfahren zu ihrer Herstellung Ceased DE2260584B2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10041071A JPS5310838B2 (enExample) 1971-12-11 1971-12-11

Publications (2)

Publication Number Publication Date
DE2260584A1 DE2260584A1 (de) 1973-06-14
DE2260584B2 true DE2260584B2 (de) 1979-06-07

Family

ID=14273194

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2260584A Ceased DE2260584B2 (de) 1971-12-11 1972-12-11 Eimerkettenschaltung und Verfahren zu ihrer Herstellung

Country Status (8)

Country Link
US (1) US3848328A (enExample)
JP (1) JPS5310838B2 (enExample)
CA (1) CA985416A (enExample)
DE (1) DE2260584B2 (enExample)
FR (1) FR2165937B1 (enExample)
GB (1) GB1393917A (enExample)
IT (1) IT971716B (enExample)
NL (1) NL7216814A (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5172288A (ja) * 1974-12-20 1976-06-22 Fujitsu Ltd Handotaisochi
DE2713876C2 (de) * 1977-03-29 1983-09-22 Siemens AG, 1000 Berlin und 8000 München Ladungsgekoppeltes Element (CCD)
US4142199A (en) * 1977-06-24 1979-02-27 International Business Machines Corporation Bucket brigade device and process
US4324038A (en) * 1980-11-24 1982-04-13 Bell Telephone Laboratories, Incorporated Method of fabricating MOS field effect transistors
US5223726A (en) * 1989-07-25 1993-06-29 Matsushita Electric Industrial Co., Ltd. Semiconductor device for charge transfer device
US5055900A (en) * 1989-10-11 1991-10-08 The Trustees Of Columbia University In The City Of New York Trench-defined charge-coupled device
US5173756A (en) * 1990-01-05 1992-12-22 International Business Machines Corporation Trench charge-coupled device
JP2825004B2 (ja) * 1991-02-08 1998-11-18 インターナショナル・ビジネス・マシーンズ・コーポレーション 側壁電荷結合撮像素子及びその製造方法

Also Published As

Publication number Publication date
JPS4865878A (enExample) 1973-09-10
FR2165937B1 (enExample) 1976-06-04
CA985416A (en) 1976-03-09
FR2165937A1 (enExample) 1973-08-10
US3848328A (en) 1974-11-19
NL7216814A (enExample) 1973-06-13
DE2260584A1 (de) 1973-06-14
IT971716B (it) 1974-05-10
GB1393917A (en) 1975-05-14
JPS5310838B2 (enExample) 1978-04-17

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Legal Events

Date Code Title Description
BHV Refusal