DE2260584B2 - Eimerkettenschaltung und Verfahren zu ihrer Herstellung - Google Patents
Eimerkettenschaltung und Verfahren zu ihrer HerstellungInfo
- Publication number
- DE2260584B2 DE2260584B2 DE2260584A DE2260584A DE2260584B2 DE 2260584 B2 DE2260584 B2 DE 2260584B2 DE 2260584 A DE2260584 A DE 2260584A DE 2260584 A DE2260584 A DE 2260584A DE 2260584 B2 DE2260584 B2 DE 2260584B2
- Authority
- DE
- Germany
- Prior art keywords
- chain circuit
- bucket chain
- layer
- island
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- 238000000034 method Methods 0.000 title description 2
- 239000000758 substrate Substances 0.000 claims description 30
- 239000003990 capacitor Substances 0.000 claims description 15
- 229910052751 metal Inorganic materials 0.000 claims description 15
- 239000002184 metal Substances 0.000 claims description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 7
- 239000004065 semiconductor Substances 0.000 claims description 6
- 235000012239 silicon dioxide Nutrition 0.000 claims description 5
- 239000000377 silicon dioxide Substances 0.000 claims description 5
- 238000010586 diagram Methods 0.000 claims description 4
- 238000009792 diffusion process Methods 0.000 claims description 4
- 230000003647 oxidation Effects 0.000 claims description 4
- 238000007254 oxidation reaction Methods 0.000 claims description 4
- 230000005540 biological transmission Effects 0.000 claims description 2
- 238000005530 etching Methods 0.000 claims 4
- 230000002123 temporal effect Effects 0.000 claims 2
- 229910052581 Si3N4 Inorganic materials 0.000 claims 1
- 229910052814 silicon oxide Inorganic materials 0.000 claims 1
- 238000000527 sonication Methods 0.000 claims 1
- 230000005684 electric field Effects 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 101100346656 Drosophila melanogaster strat gene Proteins 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/891—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D44/00, e.g. integration of charge-coupled devices [CCD] or charge injection devices [CID
- H10D84/895—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D44/00, e.g. integration of charge-coupled devices [CCD] or charge injection devices [CID comprising bucket-brigade charge-coupled devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
- G11C19/18—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages
- G11C19/182—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes
- G11C19/184—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes with field-effect transistors, e.g. MOS-FET
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
- G11C19/18—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages
- G11C19/182—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes
- G11C19/184—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes with field-effect transistors, e.g. MOS-FET
- G11C19/186—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes with field-effect transistors, e.g. MOS-FET using only one transistor per capacitor, e.g. bucket brigade shift register
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Thin Film Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10041071A JPS5310838B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1971-12-11 | 1971-12-11 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE2260584A1 DE2260584A1 (de) | 1973-06-14 |
| DE2260584B2 true DE2260584B2 (de) | 1979-06-07 |
Family
ID=14273194
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE2260584A Ceased DE2260584B2 (de) | 1971-12-11 | 1972-12-11 | Eimerkettenschaltung und Verfahren zu ihrer Herstellung |
Country Status (8)
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5172288A (ja) * | 1974-12-20 | 1976-06-22 | Fujitsu Ltd | Handotaisochi |
| DE2713876C2 (de) * | 1977-03-29 | 1983-09-22 | Siemens AG, 1000 Berlin und 8000 München | Ladungsgekoppeltes Element (CCD) |
| US4142199A (en) * | 1977-06-24 | 1979-02-27 | International Business Machines Corporation | Bucket brigade device and process |
| US4324038A (en) * | 1980-11-24 | 1982-04-13 | Bell Telephone Laboratories, Incorporated | Method of fabricating MOS field effect transistors |
| US5223726A (en) * | 1989-07-25 | 1993-06-29 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device for charge transfer device |
| US5055900A (en) * | 1989-10-11 | 1991-10-08 | The Trustees Of Columbia University In The City Of New York | Trench-defined charge-coupled device |
| US5173756A (en) * | 1990-01-05 | 1992-12-22 | International Business Machines Corporation | Trench charge-coupled device |
| JP2825004B2 (ja) * | 1991-02-08 | 1998-11-18 | インターナショナル・ビジネス・マシーンズ・コーポレーション | 側壁電荷結合撮像素子及びその製造方法 |
-
1971
- 1971-12-11 JP JP10041071A patent/JPS5310838B2/ja not_active Expired
-
1972
- 1972-12-05 US US00312332A patent/US3848328A/en not_active Expired - Lifetime
- 1972-12-07 GB GB5657672A patent/GB1393917A/en not_active Expired
- 1972-12-08 CA CA158,523A patent/CA985416A/en not_active Expired
- 1972-12-11 NL NL7216814A patent/NL7216814A/xx not_active Application Discontinuation
- 1972-12-11 DE DE2260584A patent/DE2260584B2/de not_active Ceased
- 1972-12-11 FR FR7244050A patent/FR2165937B1/fr not_active Expired
- 1972-12-11 IT IT32722/72A patent/IT971716B/it active
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5310838B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1978-04-17 |
| IT971716B (it) | 1974-05-10 |
| NL7216814A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1973-06-13 |
| FR2165937A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1973-08-10 |
| GB1393917A (en) | 1975-05-14 |
| CA985416A (en) | 1976-03-09 |
| JPS4865878A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1973-09-10 |
| DE2260584A1 (de) | 1973-06-14 |
| FR2165937B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1976-06-04 |
| US3848328A (en) | 1974-11-19 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| BHV | Refusal |