DE2255107A1 - Verfahren zum eindiffundieren von verunreinigungen in ein silizium-halbleitersubstrat - Google Patents
Verfahren zum eindiffundieren von verunreinigungen in ein silizium-halbleitersubstratInfo
- Publication number
- DE2255107A1 DE2255107A1 DE19722255107 DE2255107A DE2255107A1 DE 2255107 A1 DE2255107 A1 DE 2255107A1 DE 19722255107 DE19722255107 DE 19722255107 DE 2255107 A DE2255107 A DE 2255107A DE 2255107 A1 DE2255107 A1 DE 2255107A1
- Authority
- DE
- Germany
- Prior art keywords
- diffusion
- impurities
- polycrystalline silicon
- silicon
- semiconductor substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims description 18
- 229910052710 silicon Inorganic materials 0.000 title claims description 18
- 239000010703 silicon Substances 0.000 title claims description 18
- 239000000758 substrate Substances 0.000 title claims description 18
- 238000000034 method Methods 0.000 title claims description 16
- 239000004065 semiconductor Substances 0.000 title claims description 5
- 238000011109 contamination Methods 0.000 title description 2
- 238000009792 diffusion process Methods 0.000 claims description 32
- 239000012535 impurity Substances 0.000 claims description 22
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 20
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- 239000002019 doping agent Substances 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 239000003795 chemical substances by application Substances 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 238000005204 segregation Methods 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 238000001556 precipitation Methods 0.000 description 2
- 150000003377 silicon compounds Chemical class 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- -1 SiH ^ Chemical class 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/02—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion materials in the solid state
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
- H01L21/2251—Diffusion into or out of group IV semiconductors
- H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
- H01L21/2257—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides the applied layer being silicon or silicide or SIPOS, e.g. polysilicon, porous silicon
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Bipolar Transistors (AREA)
- Formation Of Insulating Films (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP46089701A JPS4855663A (en:Method) | 1971-11-10 | 1971-11-10 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE2255107A1 true DE2255107A1 (de) | 1973-05-17 |
Family
ID=13978063
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19722255107 Pending DE2255107A1 (de) | 1971-11-10 | 1972-11-10 | Verfahren zum eindiffundieren von verunreinigungen in ein silizium-halbleitersubstrat |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JPS4855663A (en:Method) |
| CH (1) | CH565452A5 (en:Method) |
| DE (1) | DE2255107A1 (en:Method) |
| GB (1) | GB1377699A (en:Method) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1985004759A1 (en) * | 1984-04-09 | 1985-10-24 | American Telephone & Telegraph Company | Method of transferring impurities between differently doped semiconductor regions |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5728942B2 (en:Method) * | 1973-12-22 | 1982-06-19 | ||
| JPS50134365A (en:Method) * | 1974-04-09 | 1975-10-24 | ||
| JPS50159253A (en:Method) * | 1974-06-12 | 1975-12-23 | ||
| DE2439408A1 (de) * | 1974-08-16 | 1976-02-26 | Siemens Ag | Halbleiterbauelement |
| DE2449688C3 (de) * | 1974-10-18 | 1980-07-10 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Verfahren zur Herstellung einer dotierten Zone eines Leitfähigkeitstyps in einem Halbleiterkörper |
| JPS5153462A (en) * | 1974-11-05 | 1976-05-11 | Fujitsu Ltd | Handotaisochino seizohoho |
| JPS5154365A (en) * | 1974-11-06 | 1976-05-13 | Mitsubishi Electric Corp | Handotaisochino seizohoho |
| JPS5188174A (en) * | 1975-01-31 | 1976-08-02 | Handotaisochino seizohoho | |
| JPS5222887A (en) * | 1975-08-14 | 1977-02-21 | Matsushita Electronics Corp | Semiconductor unit manufacturing system |
| JPS58108767A (ja) * | 1981-12-22 | 1983-06-28 | Nec Corp | 半導体装置の製造方法 |
-
1971
- 1971-11-10 JP JP46089701A patent/JPS4855663A/ja active Pending
-
1972
- 1972-10-31 GB GB5013572A patent/GB1377699A/en not_active Expired
- 1972-11-09 CH CH1630072A patent/CH565452A5/xx not_active IP Right Cessation
- 1972-11-10 DE DE19722255107 patent/DE2255107A1/de active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1985004759A1 (en) * | 1984-04-09 | 1985-10-24 | American Telephone & Telegraph Company | Method of transferring impurities between differently doped semiconductor regions |
Also Published As
| Publication number | Publication date |
|---|---|
| GB1377699A (en) | 1974-12-18 |
| CH565452A5 (en:Method) | 1975-08-15 |
| JPS4855663A (en:Method) | 1973-08-04 |
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