DE2251823A1 - Halbleiterelement und herstellungsverfahren - Google Patents
Halbleiterelement und herstellungsverfahrenInfo
- Publication number
- DE2251823A1 DE2251823A1 DE2251823A DE2251823A DE2251823A1 DE 2251823 A1 DE2251823 A1 DE 2251823A1 DE 2251823 A DE2251823 A DE 2251823A DE 2251823 A DE2251823 A DE 2251823A DE 2251823 A1 DE2251823 A1 DE 2251823A1
- Authority
- DE
- Germany
- Prior art keywords
- layer
- mesa
- semiconductor
- embedding
- shaped elevation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
- 239000004065 semiconductor Substances 0.000 title claims description 64
- 238000004519 manufacturing process Methods 0.000 title claims description 14
- 230000000873 masking effect Effects 0.000 claims description 59
- 238000007254 oxidation reaction Methods 0.000 claims description 48
- 230000003647 oxidation Effects 0.000 claims description 47
- 238000000034 method Methods 0.000 claims description 36
- 238000005530 etching Methods 0.000 claims description 35
- 229910052710 silicon Inorganic materials 0.000 claims description 23
- 239000010703 silicon Substances 0.000 claims description 23
- 239000000463 material Substances 0.000 claims description 19
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 12
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 12
- 229910052751 metal Inorganic materials 0.000 claims description 9
- 239000002184 metal Substances 0.000 claims description 9
- 239000004020 conductor Substances 0.000 claims description 7
- 238000007740 vapor deposition Methods 0.000 claims description 6
- 239000011810 insulating material Substances 0.000 claims description 5
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 4
- 229910052750 molybdenum Inorganic materials 0.000 claims description 4
- 239000011733 molybdenum Substances 0.000 claims description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 4
- 229910052721 tungsten Inorganic materials 0.000 claims description 4
- 239000010937 tungsten Substances 0.000 claims description 4
- 239000010410 layer Substances 0.000 claims 60
- 239000002344 surface layer Substances 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 22
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 13
- 230000005669 field effect Effects 0.000 description 10
- 238000009792 diffusion process Methods 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 229910052814 silicon oxide Inorganic materials 0.000 description 7
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 6
- ORILYTVJVMAKLC-UHFFFAOYSA-N Adamantane Natural products C1C(C2)CC3CC1CC2C3 ORILYTVJVMAKLC-UHFFFAOYSA-N 0.000 description 3
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 239000004606 Fillers/Extenders Substances 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- 230000003028 elevating effect Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 230000003313 weakening effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
- H01L21/76221—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO with a plurality of successive local oxidation steps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Bipolar Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
Priority Applications (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE2251823A DE2251823A1 (de) | 1972-10-21 | 1972-10-21 | Halbleiterelement und herstellungsverfahren |
| US405222A US3869786A (en) | 1972-10-21 | 1973-10-10 | Semiconductor component and its method of manufacturing |
| AU61364/73A AU6136473A (en) | 1972-10-21 | 1973-10-15 | Semiconductor component |
| IT30150/73A IT995885B (it) | 1972-10-21 | 1973-10-16 | Componente a semiconduttore e meto do per la fabbricazione dello stesso |
| FR7337186A FR2204045B1 (US07696358-20100413-C00002.png) | 1972-10-21 | 1973-10-18 | |
| JP48117735A JPS4975077A (US07696358-20100413-C00002.png) | 1972-10-21 | 1973-10-19 | |
| NL7314500A NL7314500A (US07696358-20100413-C00002.png) | 1972-10-21 | 1973-10-22 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE2251823A DE2251823A1 (de) | 1972-10-21 | 1972-10-21 | Halbleiterelement und herstellungsverfahren |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE2251823A1 true DE2251823A1 (de) | 1974-05-02 |
Family
ID=5859760
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE2251823A Ceased DE2251823A1 (de) | 1972-10-21 | 1972-10-21 | Halbleiterelement und herstellungsverfahren |
Country Status (7)
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| IT1085486B (it) * | 1977-05-30 | 1985-05-28 | Ates Componenti Elettron | Struttura a semiconduttore integrata monolitica con giunzioni planari schermate da campi elettrostatici esterni |
| US4219379A (en) * | 1978-09-25 | 1980-08-26 | Mostek Corporation | Method for making a semiconductor device |
| US4268951A (en) * | 1978-11-13 | 1981-05-26 | Rockwell International Corporation | Submicron semiconductor devices |
| DE2902665A1 (de) * | 1979-01-24 | 1980-08-07 | Siemens Ag | Verfahren zum herstellen von integrierten mos-schaltungen in silizium-gate- technologie |
| CA1204525A (en) * | 1982-11-29 | 1986-05-13 | Tetsu Fukano | Method for forming an isolation region for electrically isolating elements |
| JP3594779B2 (ja) * | 1997-06-24 | 2004-12-02 | 株式会社ルネサステクノロジ | 半導体装置の製造方法 |
| US6190952B1 (en) * | 1999-03-03 | 2001-02-20 | Advanced Micro Devices, Inc. | Multiple semiconductor-on-insulator threshold voltage circuit |
| US6455903B1 (en) | 2000-01-26 | 2002-09-24 | Advanced Micro Devices, Inc. | Dual threshold voltage MOSFET by local confinement of channel depletion layer using inert ion implantation |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3534234A (en) * | 1966-12-15 | 1970-10-13 | Texas Instruments Inc | Modified planar process for making semiconductor devices having ultrafine mesa type geometry |
| NL164424C (nl) * | 1970-06-04 | 1980-12-15 | Philips Nv | Werkwijze voor het vervaardigen van een veldeffect- transistor met een geisoleerde stuurelektrode, waarbij een door een tegen oxydatie maskerende laag vrijgelaten deel van het oppervlak van een siliciumlichaam aan een oxydatiebehandeling wordt onderworpen ter verkrijging van een althans gedeeltelijk in het siliciumlichaam verzonken siliciumoxydelaag. |
| NL170348C (nl) * | 1970-07-10 | 1982-10-18 | Philips Nv | Werkwijze voor het vervaardigen van een halfgeleiderinrichting, waarbij op een oppervlak van een halfgeleiderlichaam een tegen dotering en tegen thermische oxydatie maskerend masker wordt aangebracht, de door de vensters in het masker vrijgelaten delen van het oppervlak worden onderworpen aan een etsbehandeling voor het vormen van verdiepingen en het halfgeleiderlichaam met het masker wordt onderworpen aan een thermische oxydatiebehandeling voor het vormen van een oxydepatroon dat de verdiepingen althans ten dele opvult. |
| US3815223A (en) * | 1971-02-08 | 1974-06-11 | Signetics Corp | Method for making semiconductor structure with dielectric and air isolation |
| US3761327A (en) * | 1971-03-19 | 1973-09-25 | Itt | Planar silicon gate mos process |
-
1972
- 1972-10-21 DE DE2251823A patent/DE2251823A1/de not_active Ceased
-
1973
- 1973-10-10 US US405222A patent/US3869786A/en not_active Expired - Lifetime
- 1973-10-15 AU AU61364/73A patent/AU6136473A/en not_active Expired
- 1973-10-16 IT IT30150/73A patent/IT995885B/it active
- 1973-10-18 FR FR7337186A patent/FR2204045B1/fr not_active Expired
- 1973-10-19 JP JP48117735A patent/JPS4975077A/ja active Pending
- 1973-10-22 NL NL7314500A patent/NL7314500A/xx not_active Application Discontinuation
Also Published As
| Publication number | Publication date |
|---|---|
| JPS4975077A (US07696358-20100413-C00002.png) | 1974-07-19 |
| IT995885B (it) | 1975-11-20 |
| NL7314500A (US07696358-20100413-C00002.png) | 1974-04-23 |
| FR2204045B1 (US07696358-20100413-C00002.png) | 1977-05-27 |
| US3869786A (en) | 1975-03-11 |
| FR2204045A1 (US07696358-20100413-C00002.png) | 1974-05-17 |
| AU6136473A (en) | 1975-04-17 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OD | Request for examination | ||
| 8131 | Rejection |