DE2246331A1 - Halbleiter-speicher - Google Patents
Halbleiter-speicherInfo
- Publication number
- DE2246331A1 DE2246331A1 DE2246331A DE2246331A DE2246331A1 DE 2246331 A1 DE2246331 A1 DE 2246331A1 DE 2246331 A DE2246331 A DE 2246331A DE 2246331 A DE2246331 A DE 2246331A DE 2246331 A1 DE2246331 A1 DE 2246331A1
- Authority
- DE
- Germany
- Prior art keywords
- transistor
- cell
- write
- memory according
- reading
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 32
- 230000005669 field effect Effects 0.000 claims description 48
- 239000000758 substrate Substances 0.000 claims description 13
- 238000000926 separation method Methods 0.000 claims description 6
- 230000003389 potentiating effect Effects 0.000 claims 1
- 238000002161 passivation Methods 0.000 description 8
- 238000009792 diffusion process Methods 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 5
- 230000002457 bidirectional effect Effects 0.000 description 4
- 238000010276 construction Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000002955 isolation Methods 0.000 description 3
- 230000003321 amplification Effects 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 241000251730 Chondrichthyes Species 0.000 description 1
- 235000010676 Ocimum basilicum Nutrition 0.000 description 1
- 240000007926 Ocimum gratissimum Species 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 235000013601 eggs Nutrition 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/24—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using capacitors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/4067—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the bipolar type
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B99/00—Subject matter not provided for in other groups of this subclass
- H10B99/10—Memory cells having a cross-point geometry
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
- H10D84/401—Combinations of FETs or IGBTs with BJTs
- H10D84/403—Combinations of FETs or IGBTs with BJTs and with one or more of diodes, resistors or capacitors
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Static Random-Access Memory (AREA)
- Dram (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB4426371A GB1390034A (en) | 1971-09-22 | 1971-09-22 | Semiconductor information storage devices |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE2246331A1 true DE2246331A1 (de) | 1973-03-29 |
Family
ID=10432499
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE2246331A Pending DE2246331A1 (de) | 1971-09-22 | 1972-09-21 | Halbleiter-speicher |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JPS4840343A (enrdf_load_stackoverflow) |
| BR (1) | BR7206604D0 (enrdf_load_stackoverflow) |
| DE (1) | DE2246331A1 (enrdf_load_stackoverflow) |
| GB (1) | GB1390034A (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5036233A (en) * | 1988-07-20 | 1991-07-30 | Telefunken Electronic Gmbh | Integrated semiconductor circuit having a unidirectional semiconductor component for preventing saturation of bipolar transistors |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2460150C2 (de) * | 1974-12-19 | 1984-07-12 | Ibm Deutschland Gmbh, 7000 Stuttgart | Monolitisch integrierbare Speicheranordnung |
| JPS5370679A (en) * | 1976-12-06 | 1978-06-23 | Nippon Gakki Seizo Kk | Transistor |
| DE2820321A1 (de) * | 1978-05-10 | 1979-11-15 | Hoechst Ag | Verfahren zur herstellung von monoarylthioharnstoffen |
-
1971
- 1971-09-22 GB GB4426371A patent/GB1390034A/en not_active Expired
-
1972
- 1972-09-21 DE DE2246331A patent/DE2246331A1/de active Pending
- 1972-09-22 JP JP47094723A patent/JPS4840343A/ja active Pending
- 1972-09-25 BR BR006604/72A patent/BR7206604D0/pt unknown
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5036233A (en) * | 1988-07-20 | 1991-07-30 | Telefunken Electronic Gmbh | Integrated semiconductor circuit having a unidirectional semiconductor component for preventing saturation of bipolar transistors |
Also Published As
| Publication number | Publication date |
|---|---|
| GB1390034A (en) | 1975-04-09 |
| BR7206604D0 (pt) | 1973-08-30 |
| JPS4840343A (enrdf_load_stackoverflow) | 1973-06-13 |
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