GB1390034A - Semiconductor information storage devices - Google Patents

Semiconductor information storage devices

Info

Publication number
GB1390034A
GB1390034A GB4426371A GB4426371A GB1390034A GB 1390034 A GB1390034 A GB 1390034A GB 4426371 A GB4426371 A GB 4426371A GB 4426371 A GB4426371 A GB 4426371A GB 1390034 A GB1390034 A GB 1390034A
Authority
GB
United Kingdom
Prior art keywords
read
write
circuit
select line
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB4426371A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ferranti International PLC
Original Assignee
Ferranti PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ferranti PLC filed Critical Ferranti PLC
Priority to GB4426371A priority Critical patent/GB1390034A/en
Priority to DE2246331A priority patent/DE2246331A1/de
Priority to JP47094723A priority patent/JPS4840343A/ja
Priority to BR006604/72A priority patent/BR7206604D0/pt
Publication of GB1390034A publication Critical patent/GB1390034A/en
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/24—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using capacitors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/4067—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the bipolar type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B99/00—Subject matter not provided for in other groups of this subclass
    • H10B99/10—Memory cells having a cross-point geometry
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401—Combinations of FETs or IGBTs with BJTs
    • H10D84/403—Combinations of FETs or IGBTs with BJTs and with one or more of diodes, resistors or capacitors

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Static Random-Access Memory (AREA)
  • Semiconductor Memories (AREA)
  • Dram (AREA)
GB4426371A 1971-09-22 1971-09-22 Semiconductor information storage devices Expired GB1390034A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
GB4426371A GB1390034A (en) 1971-09-22 1971-09-22 Semiconductor information storage devices
DE2246331A DE2246331A1 (de) 1971-09-22 1972-09-21 Halbleiter-speicher
JP47094723A JPS4840343A (enrdf_load_stackoverflow) 1971-09-22 1972-09-22
BR006604/72A BR7206604D0 (pt) 1971-09-22 1972-09-25 Um aparelho de processamento de dados com dispositivo semicondutor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB4426371A GB1390034A (en) 1971-09-22 1971-09-22 Semiconductor information storage devices

Publications (1)

Publication Number Publication Date
GB1390034A true GB1390034A (en) 1975-04-09

Family

ID=10432499

Family Applications (1)

Application Number Title Priority Date Filing Date
GB4426371A Expired GB1390034A (en) 1971-09-22 1971-09-22 Semiconductor information storage devices

Country Status (4)

Country Link
JP (1) JPS4840343A (enrdf_load_stackoverflow)
BR (1) BR7206604D0 (enrdf_load_stackoverflow)
DE (1) DE2246331A1 (enrdf_load_stackoverflow)
GB (1) GB1390034A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4209795A (en) * 1976-12-06 1980-06-24 Nippon Gakki Seizo Kabushiki Kaisha Jsit-type field effect transistor with deep level channel doping

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2460150C2 (de) * 1974-12-19 1984-07-12 Ibm Deutschland Gmbh, 7000 Stuttgart Monolitisch integrierbare Speicheranordnung
DE2820321A1 (de) * 1978-05-10 1979-11-15 Hoechst Ag Verfahren zur herstellung von monoarylthioharnstoffen
DE3824694A1 (de) * 1988-07-20 1990-02-01 Fraunhofer Ges Forschung Halbleiterschaltung fuer schnelle schaltvorgaenge

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4209795A (en) * 1976-12-06 1980-06-24 Nippon Gakki Seizo Kabushiki Kaisha Jsit-type field effect transistor with deep level channel doping

Also Published As

Publication number Publication date
JPS4840343A (enrdf_load_stackoverflow) 1973-06-13
DE2246331A1 (de) 1973-03-29
BR7206604D0 (pt) 1973-08-30

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PLNP Patent lapsed through nonpayment of renewal fees