DE2243988C3 - Hableiteranordnung mit mindestens einem MIS-Kondensator - Google Patents
Hableiteranordnung mit mindestens einem MIS-KondensatorInfo
- Publication number
- DE2243988C3 DE2243988C3 DE2243988A DE2243988A DE2243988C3 DE 2243988 C3 DE2243988 C3 DE 2243988C3 DE 2243988 A DE2243988 A DE 2243988A DE 2243988 A DE2243988 A DE 2243988A DE 2243988 C3 DE2243988 C3 DE 2243988C3
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor
- semiconductor arrangement
- arrangement according
- insulating layer
- layers
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title claims description 32
- 239000003990 capacitor Substances 0.000 title claims description 13
- 229910052710 silicon Inorganic materials 0.000 claims description 10
- 239000010703 silicon Substances 0.000 claims description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 229910052782 aluminium Inorganic materials 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 5
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 235000012239 silicon dioxide Nutrition 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 229910052749 magnesium Inorganic materials 0.000 claims description 2
- 150000002739 metals Chemical class 0.000 claims description 2
- 229910052697 platinum Inorganic materials 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 230000002269 spontaneous effect Effects 0.000 description 3
- 239000007772 electrode material Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012774 insulation material Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000008929 regeneration Effects 0.000 description 1
- 238000011069 regeneration method Methods 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/60—Electrodes characterised by their materials
- H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
- H10D64/671—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor having lateral variation in doping or structure
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/60—Capacitors
- H10D1/62—Capacitors having potential barriers
- H10D1/66—Conductor-insulator-semiconductor capacitors, e.g. MOS capacitors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D44/00—Charge transfer devices
- H10D44/40—Charge-coupled devices [CCD]
- H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/15—Charge-coupled device [CCD] image sensors
- H10F39/152—One-dimensional array CCD image sensors
Landscapes
- Semiconductor Integrated Circuits (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Priority Applications (10)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE2243988A DE2243988C3 (de) | 1972-09-07 | 1972-09-07 | Hableiteranordnung mit mindestens einem MIS-Kondensator |
AT659773A AT325122B (de) | 1972-09-07 | 1973-07-26 | Halbleiteranordnung |
CH1103773A CH560455A5 (enrdf_load_stackoverflow) | 1972-09-07 | 1973-07-30 | |
GB3690473A GB1407339A (en) | 1972-09-07 | 1973-08-03 | Semiconductor arrangements |
NL7311878A NL7311878A (enrdf_load_stackoverflow) | 1972-09-07 | 1973-08-29 | |
IT28444/73A IT993110B (it) | 1972-09-07 | 1973-08-31 | Dispositivo a semiconduttori |
FR7331857A FR2199180B1 (enrdf_load_stackoverflow) | 1972-09-07 | 1973-09-04 | |
SE7312160A SE383584B (sv) | 1972-09-07 | 1973-09-06 | Halvledaranordning innefattande minst en kondensator |
CA180,432A CA1007746A (en) | 1972-09-07 | 1973-09-06 | Semiconductor charge transfer electrodes |
JP48101010A JPS4968689A (enrdf_load_stackoverflow) | 1972-09-07 | 1973-09-07 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE2243988A DE2243988C3 (de) | 1972-09-07 | 1972-09-07 | Hableiteranordnung mit mindestens einem MIS-Kondensator |
Publications (3)
Publication Number | Publication Date |
---|---|
DE2243988A1 DE2243988A1 (de) | 1974-03-14 |
DE2243988B2 DE2243988B2 (de) | 1979-07-05 |
DE2243988C3 true DE2243988C3 (de) | 1980-03-20 |
Family
ID=5855747
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE2243988A Expired DE2243988C3 (de) | 1972-09-07 | 1972-09-07 | Hableiteranordnung mit mindestens einem MIS-Kondensator |
Country Status (10)
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CA1074009A (en) * | 1975-03-03 | 1980-03-18 | Robert W. Brodersen | Charge coupled device memory |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3651349A (en) * | 1970-02-16 | 1972-03-21 | Bell Telephone Labor Inc | Monolithic semiconductor apparatus adapted for sequential charge transfer |
-
1972
- 1972-09-07 DE DE2243988A patent/DE2243988C3/de not_active Expired
-
1973
- 1973-07-26 AT AT659773A patent/AT325122B/de not_active IP Right Cessation
- 1973-07-30 CH CH1103773A patent/CH560455A5/xx not_active IP Right Cessation
- 1973-08-03 GB GB3690473A patent/GB1407339A/en not_active Expired
- 1973-08-29 NL NL7311878A patent/NL7311878A/xx not_active Application Discontinuation
- 1973-08-31 IT IT28444/73A patent/IT993110B/it active
- 1973-09-04 FR FR7331857A patent/FR2199180B1/fr not_active Expired
- 1973-09-06 CA CA180,432A patent/CA1007746A/en not_active Expired
- 1973-09-06 SE SE7312160A patent/SE383584B/xx unknown
- 1973-09-07 JP JP48101010A patent/JPS4968689A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
NL7311878A (enrdf_load_stackoverflow) | 1974-03-11 |
CH560455A5 (enrdf_load_stackoverflow) | 1975-03-27 |
CA1007746A (en) | 1977-03-29 |
JPS4968689A (enrdf_load_stackoverflow) | 1974-07-03 |
DE2243988A1 (de) | 1974-03-14 |
FR2199180A1 (enrdf_load_stackoverflow) | 1974-04-05 |
FR2199180B1 (enrdf_load_stackoverflow) | 1982-03-05 |
AT325122B (de) | 1975-10-10 |
DE2243988B2 (de) | 1979-07-05 |
IT993110B (it) | 1975-09-30 |
SE383584B (sv) | 1976-03-15 |
GB1407339A (en) | 1975-09-24 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE3046749C2 (de) | MOS-Transistor für hohe Betriebsspannungen | |
DE69224709T2 (de) | Halbleiteranordnung mit verbesserter Durchbruchspannungs-Charakteristik | |
DE2805170C2 (enrdf_load_stackoverflow) | ||
DE2810597C2 (de) | Elektrische Bauelementstruktur mit einer mehrschichtigen Isolierschicht | |
DE69032479T2 (de) | Verbesserter Dünnfilmvaraktor | |
DE3136682C2 (enrdf_load_stackoverflow) | ||
DE3413829C2 (enrdf_load_stackoverflow) | ||
DE2730202A1 (de) | Halbleiterspeicher | |
DE2050289B2 (de) | Steuerbarer Halbleitergleichrichter | |
DE2148948C3 (de) | Speicheranordnung mit Ein-Transistor-Speicherelementen | |
DE1913053B2 (de) | Feldeffekttransistor mit isolierter Gate-Elektrode | |
DE2711460C2 (de) | Elektroakustische Signalverarbeitungseinrichtung | |
DE3021042C2 (de) | Widerstandselement mit hoher Durchbruchsspannung für integrierte Schaltungen | |
DE102020207439A1 (de) | Neuronen und Synapsen mit ferroelektrisch modulierten Metall-Halbleiter Schottky Dioden nebst Verfahren | |
DE2634312C2 (de) | Mit zweiphasigen Taktsignalen betreibbare CCD-Vorrichtung | |
DE2201028C3 (de) | Verfahren zum Betrieb eines Feldeffekttransistors und Feldeffekttransistor zur Ausübung dieses Verfahrens | |
DE2300116A1 (de) | Hochfrequenz-feldeffekttransistor mit isolierter gate-elektrode fuer breitbandbetrieb | |
DE2818584C2 (de) | Sperrschicht-Feldeffekttransistor vom vertikalen Typ | |
DE2243988C3 (de) | Hableiteranordnung mit mindestens einem MIS-Kondensator | |
DE1764171A1 (de) | Halbleitereinrichtung und Verfahren zu deren Herstellung | |
DE2855816C2 (de) | Integrierte Halbleiterschaltungsanordnung mit einer Schottky-Sperrschichtdiode | |
DE2520608C3 (de) | Halbleiteranordnung zum Digitalisieren eines analogen elektrischen Eingangssignals | |
DE2613096A1 (de) | Halbleiteranordnung | |
EP0156022B1 (de) | Durch Feldeffekt steuerbares Halbleiterbauelement | |
DE2657511A1 (de) | Monolithisch integrierbare speicherzelle |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C3 | Grant after two publication steps (3rd publication) | ||
8339 | Ceased/non-payment of the annual fee |