GB1407339A - Semiconductor arrangements - Google Patents

Semiconductor arrangements

Info

Publication number
GB1407339A
GB1407339A GB3690473A GB3690473A GB1407339A GB 1407339 A GB1407339 A GB 1407339A GB 3690473 A GB3690473 A GB 3690473A GB 3690473 A GB3690473 A GB 3690473A GB 1407339 A GB1407339 A GB 1407339A
Authority
GB
United Kingdom
Prior art keywords
layers
materials
insulating layer
chargecoupled
thereunder
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB3690473A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of GB1407339A publication Critical patent/GB1407339A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4983—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET with a lateral structure, e.g. a Polysilicon gate with a lateral doping variation or with a lateral composition variation or characterised by the sidewalls being composed of conductive, resistive or dielectric material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14825—Linear CCD imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42396—Gate electrodes for field effect devices for charge coupled devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/92—Capacitors having potential barriers
    • H01L29/94—Metal-insulator-semiconductors, e.g. MOS
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Electromagnetism (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)

Abstract

1407339 Semiconductor devices SIEMENS AG 3 Aug 1973 [7 Sept 1972] 36907/73 Heading. H1K The conductive layer of an MIS capacitor consists of two interconnected, juxtaposed subsidiary layers 3, 4 formed of materials having differing contact potentials with respect to the semiconductor body 1. The layers 3, 4 may be contiguous as shown or may be spaced apart vertically by a small amount due to different thickness of the insulating layer 2 thereunder, provided that they have a common terminal 6. The materials of the insulating layer 2 may additionally differ beneath the layers 3, 4. The invention is of particular application to chargecoupled vidicon targets or shift registers, and an embodiment incorporating both is described. Particular combinations of materials for the layers 3, 4 are Al/p+Si, Au/Al, Ni/Al and Ni/n+Si, and Pt, At and Mg are also mentioned.
GB3690473A 1972-09-07 1973-08-03 Semiconductor arrangements Expired GB1407339A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2243988A DE2243988C3 (en) 1972-09-07 1972-09-07 Semiconductor arrangement with at least one MIS capacitor

Publications (1)

Publication Number Publication Date
GB1407339A true GB1407339A (en) 1975-09-24

Family

ID=5855747

Family Applications (1)

Application Number Title Priority Date Filing Date
GB3690473A Expired GB1407339A (en) 1972-09-07 1973-08-03 Semiconductor arrangements

Country Status (10)

Country Link
JP (1) JPS4968689A (en)
AT (1) AT325122B (en)
CA (1) CA1007746A (en)
CH (1) CH560455A5 (en)
DE (1) DE2243988C3 (en)
FR (1) FR2199180B1 (en)
GB (1) GB1407339A (en)
IT (1) IT993110B (en)
NL (1) NL7311878A (en)
SE (1) SE383584B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1074009A (en) * 1975-03-03 1980-03-18 Robert W. Brodersen Charge coupled device memory

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3651349A (en) * 1970-02-16 1972-03-21 Bell Telephone Labor Inc Monolithic semiconductor apparatus adapted for sequential charge transfer

Also Published As

Publication number Publication date
FR2199180B1 (en) 1982-03-05
JPS4968689A (en) 1974-07-03
FR2199180A1 (en) 1974-04-05
IT993110B (en) 1975-09-30
NL7311878A (en) 1974-03-11
SE383584B (en) 1976-03-15
CA1007746A (en) 1977-03-29
AT325122B (en) 1975-10-10
DE2243988B2 (en) 1979-07-05
DE2243988A1 (en) 1974-03-14
CH560455A5 (en) 1975-03-27
DE2243988C3 (en) 1980-03-20

Similar Documents

Publication Publication Date Title
IE35096B1 (en) Improvements in or relating to semiconductor devices
GB1290194A (en)
GB1351923A (en) Manufacture of insualted gate field effect transistors
GB1021359A (en) Improved electrical connection to a semiconductor body
KR920700479A (en) Nonvolatile Process Compatible with Dual-Level Metal MOS Processes in Digital and Analog
GB1466679A (en) Manufacture of semiconductor devices
GB439457A (en) Improvements in or relating to electrical amplifiers and other control arrangements and devices
FR2390009A1 (en)
GB1254899A (en) Semiconductor circuit with capacitor selectively switchable in series with an input electrode
GB1407339A (en) Semiconductor arrangements
GB1282616A (en) Semiconductor devices
GB1448610A (en) Semiconductor devices having refractory metal and silicon layers
JPS5691477A (en) Semiconductor
GB1009455A (en) Improvements in or relating to electrical contacts
GB882179A (en) Electric condenser
GB1396807A (en) Semiconductor based thermoelements
GB1521341A (en) Charge-coupled arrangements
GB1031128A (en) Improvements in or relating to feedthrough capacitors
GB1246913A (en) Improvements in or relating to the manufacture of semiconductor devices and devices produced thereby
GB1338048A (en) Semiconductor devices
GB1040676A (en) Digital shift register
SU467419A1 (en) Electrostatic relay
JPS52114285A (en) Mis type semiconductor device
FR2172200B1 (en)
SU535608A1 (en) Semiconductor capacitor

Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee