DE2240249C3 - Ladungsgekoppeltes Halbleiterbauelement - Google Patents

Ladungsgekoppeltes Halbleiterbauelement

Info

Publication number
DE2240249C3
DE2240249C3 DE2240249A DE2240249A DE2240249C3 DE 2240249 C3 DE2240249 C3 DE 2240249C3 DE 2240249 A DE2240249 A DE 2240249A DE 2240249 A DE2240249 A DE 2240249A DE 2240249 C3 DE2240249 C3 DE 2240249C3
Authority
DE
Germany
Prior art keywords
electrode
charge
substrate
pair
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE2240249A
Other languages
German (de)
English (en)
Other versions
DE2240249B2 (enrdf_load_stackoverflow
DE2240249A1 (de
Inventor
Walter Frank Skillman N.J. Kosonocky (V.St.A.)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of DE2240249A1 publication Critical patent/DE2240249A1/de
Publication of DE2240249B2 publication Critical patent/DE2240249B2/de
Application granted granted Critical
Publication of DE2240249C3 publication Critical patent/DE2240249C3/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/681—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered
    • H10D64/685—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered being perpendicular to the channel plane
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • G11C19/282—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements with charge storage in a depletion layer, i.e. charge coupled devices [CCD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D44/00—Charge transfer devices
    • H10D44/40—Charge-coupled devices [CCD]
    • H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D44/00—Charge transfer devices
    • H10D44/40—Charge-coupled devices [CCD]
    • H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes 
    • H10D44/472—Surface-channel CCD
    • H10D44/474—Two-phase CCD
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/691—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator comprising metallic compounds, e.g. metal oxides or metal silicates 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/693—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator the insulator comprising nitrogen, e.g. nitrides, oxynitrides or nitrogen-doped materials

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  • Solid State Image Pick-Up Elements (AREA)
DE2240249A 1971-08-19 1972-08-16 Ladungsgekoppeltes Halbleiterbauelement Expired DE2240249C3 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US17315271A 1971-08-19 1971-08-19

Publications (3)

Publication Number Publication Date
DE2240249A1 DE2240249A1 (de) 1973-02-22
DE2240249B2 DE2240249B2 (enrdf_load_stackoverflow) 1974-05-22
DE2240249C3 true DE2240249C3 (de) 1975-05-07

Family

ID=22630755

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2240249A Expired DE2240249C3 (de) 1971-08-19 1972-08-16 Ladungsgekoppeltes Halbleiterbauelement

Country Status (5)

Country Link
JP (1) JPS5123865B2 (enrdf_load_stackoverflow)
CA (1) CA1101548A (enrdf_load_stackoverflow)
DE (1) DE2240249C3 (enrdf_load_stackoverflow)
FR (1) FR2149568B1 (enrdf_load_stackoverflow)
GB (1) GB1395558A (enrdf_load_stackoverflow)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4875176A (enrdf_load_stackoverflow) * 1972-01-12 1973-10-09
DE2351393C3 (de) * 1973-10-12 1978-06-22 Siemens Ag, 1000 Berlin Und 8000 Muenchen Ladungsverschiebeanordnung in Zwei-Phasen-Technik und Verfahren zu ihrer Herstellung
JPS5815271A (ja) * 1981-07-21 1983-01-28 Nec Corp 電荷結合素子

Also Published As

Publication number Publication date
JPS5123865B2 (enrdf_load_stackoverflow) 1976-07-20
FR2149568A1 (enrdf_load_stackoverflow) 1973-03-30
FR2149568B1 (enrdf_load_stackoverflow) 1976-10-29
JPS4830879A (enrdf_load_stackoverflow) 1973-04-23
CA1101548A (en) 1981-05-19
DE2240249B2 (enrdf_load_stackoverflow) 1974-05-22
GB1395558A (en) 1975-05-29
DE2240249A1 (de) 1973-02-22

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Legal Events

Date Code Title Description
C3 Grant after two publication steps (3rd publication)
E77 Valid patent as to the heymanns-index 1977
EHJ Ceased/non-payment of the annual fee