JPS4830879A - - Google Patents

Info

Publication number
JPS4830879A
JPS4830879A JP47082732A JP8273272A JPS4830879A JP S4830879 A JPS4830879 A JP S4830879A JP 47082732 A JP47082732 A JP 47082732A JP 8273272 A JP8273272 A JP 8273272A JP S4830879 A JPS4830879 A JP S4830879A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP47082732A
Other languages
Japanese (ja)
Other versions
JPS5123865B2 (enrdf_load_stackoverflow
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS4830879A publication Critical patent/JPS4830879A/ja
Publication of JPS5123865B2 publication Critical patent/JPS5123865B2/ja
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/681—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered
    • H10D64/685—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered being perpendicular to the channel plane
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • G11C19/282—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements with charge storage in a depletion layer, i.e. charge coupled devices [CCD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D44/00—Charge transfer devices
    • H10D44/40—Charge-coupled devices [CCD]
    • H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D44/00—Charge transfer devices
    • H10D44/40—Charge-coupled devices [CCD]
    • H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes 
    • H10D44/472—Surface-channel CCD
    • H10D44/474—Two-phase CCD
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/691—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator comprising metallic compounds, e.g. metal oxides or metal silicates 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/693—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator the insulator comprising nitrogen, e.g. nitrides, oxynitrides or nitrogen-doped materials

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
JP47082732A 1971-08-19 1972-08-18 Expired JPS5123865B2 (enrdf_load_stackoverflow)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US17315271A 1971-08-19 1971-08-19

Publications (2)

Publication Number Publication Date
JPS4830879A true JPS4830879A (enrdf_load_stackoverflow) 1973-04-23
JPS5123865B2 JPS5123865B2 (enrdf_load_stackoverflow) 1976-07-20

Family

ID=22630755

Family Applications (1)

Application Number Title Priority Date Filing Date
JP47082732A Expired JPS5123865B2 (enrdf_load_stackoverflow) 1971-08-19 1972-08-18

Country Status (5)

Country Link
JP (1) JPS5123865B2 (enrdf_load_stackoverflow)
CA (1) CA1101548A (enrdf_load_stackoverflow)
DE (1) DE2240249C3 (enrdf_load_stackoverflow)
FR (1) FR2149568B1 (enrdf_load_stackoverflow)
GB (1) GB1395558A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4875176A (enrdf_load_stackoverflow) * 1972-01-12 1973-10-09
JPS5068077A (enrdf_load_stackoverflow) * 1973-10-12 1975-06-07
JPS5815271A (ja) * 1981-07-21 1983-01-28 Nec Corp 電荷結合素子

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4875176A (enrdf_load_stackoverflow) * 1972-01-12 1973-10-09
JPS5068077A (enrdf_load_stackoverflow) * 1973-10-12 1975-06-07
JPS5815271A (ja) * 1981-07-21 1983-01-28 Nec Corp 電荷結合素子

Also Published As

Publication number Publication date
JPS5123865B2 (enrdf_load_stackoverflow) 1976-07-20
FR2149568A1 (enrdf_load_stackoverflow) 1973-03-30
DE2240249C3 (de) 1975-05-07
FR2149568B1 (enrdf_load_stackoverflow) 1976-10-29
CA1101548A (en) 1981-05-19
DE2240249B2 (enrdf_load_stackoverflow) 1974-05-22
GB1395558A (en) 1975-05-29
DE2240249A1 (de) 1973-02-22

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