DE2236178A1 - Monolithisch integrierte anordnung lichtemittierender dioden und verfahren zur herstellung derselben - Google Patents
Monolithisch integrierte anordnung lichtemittierender dioden und verfahren zur herstellung derselbenInfo
- Publication number
- DE2236178A1 DE2236178A1 DE2236178A DE2236178A DE2236178A1 DE 2236178 A1 DE2236178 A1 DE 2236178A1 DE 2236178 A DE2236178 A DE 2236178A DE 2236178 A DE2236178 A DE 2236178A DE 2236178 A1 DE2236178 A1 DE 2236178A1
- Authority
- DE
- Germany
- Prior art keywords
- epitaxial layer
- semiconductor
- arrangement according
- epitaxial
- conductivity type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 11
- 239000004065 semiconductor Substances 0.000 claims description 45
- 238000009792 diffusion process Methods 0.000 claims description 28
- 239000000758 substrate Substances 0.000 claims description 14
- 238000000034 method Methods 0.000 claims description 13
- 238000000407 epitaxy Methods 0.000 claims description 9
- 239000007791 liquid phase Substances 0.000 claims description 7
- 238000002513 implantation Methods 0.000 claims description 2
- 238000005468 ion implantation Methods 0.000 claims description 2
- 239000000155 melt Substances 0.000 description 12
- 239000000463 material Substances 0.000 description 11
- 238000009413 insulation Methods 0.000 description 5
- 239000002019 doping agent Substances 0.000 description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910018731 Sn—Au Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
- H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
- H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
- H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
- C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
- C30B19/063—Sliding boat system
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
- C30B19/10—Controlling or regulating
- C30B19/106—Controlling or regulating adding crystallising material or reactants forming it in situ to the liquid
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Led Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US17585571A | 1971-08-30 | 1971-08-30 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE2236178A1 true DE2236178A1 (de) | 1973-03-08 |
Family
ID=22641935
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE2236178A Pending DE2236178A1 (de) | 1971-08-30 | 1972-07-24 | Monolithisch integrierte anordnung lichtemittierender dioden und verfahren zur herstellung derselben |
Country Status (6)
| Country | Link |
|---|---|
| JP (1) | JPS4833786A (enrdf_load_stackoverflow) |
| CA (1) | CA974632A (enrdf_load_stackoverflow) |
| DE (1) | DE2236178A1 (enrdf_load_stackoverflow) |
| FR (1) | FR2150924B1 (enrdf_load_stackoverflow) |
| GB (1) | GB1392955A (enrdf_load_stackoverflow) |
| IT (1) | IT963423B (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3129967A1 (de) * | 1981-07-29 | 1983-02-17 | Siemens AG, 1000 Berlin und 8000 München | Lichtaussendendes halbleiterbauelement |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3846193A (en) * | 1972-06-22 | 1974-11-05 | Ibm | Minimizing cross-talk in l.e.d.arrays |
| CN107887486B (zh) * | 2017-09-26 | 2024-04-05 | 华润微集成电路(无锡)有限公司 | 一种光电晶体管及其制作方法 |
-
1972
- 1972-07-19 GB GB3367672A patent/GB1392955A/en not_active Expired
- 1972-07-24 DE DE2236178A patent/DE2236178A1/de active Pending
- 1972-07-27 IT IT27490/72A patent/IT963423B/it active
- 1972-08-11 JP JP8008672A patent/JPS4833786A/ja active Pending
- 1972-08-23 FR FR7230582A patent/FR2150924B1/fr not_active Expired
- 1972-08-28 CA CA150,317A patent/CA974632A/en not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3129967A1 (de) * | 1981-07-29 | 1983-02-17 | Siemens AG, 1000 Berlin und 8000 München | Lichtaussendendes halbleiterbauelement |
Also Published As
| Publication number | Publication date |
|---|---|
| CA974632A (en) | 1975-09-16 |
| JPS4833786A (enrdf_load_stackoverflow) | 1973-05-12 |
| IT963423B (it) | 1974-01-10 |
| FR2150924B1 (enrdf_load_stackoverflow) | 1975-09-12 |
| GB1392955A (en) | 1975-05-07 |
| FR2150924A1 (enrdf_load_stackoverflow) | 1973-04-13 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OHJ | Non-payment of the annual fee |