DE2234461A1 - Metallisierungsmasse und verfahren zum metallisieren einer vertiefung in halbleiterpackungen sowie das dabei erhaltene produkt - Google Patents

Metallisierungsmasse und verfahren zum metallisieren einer vertiefung in halbleiterpackungen sowie das dabei erhaltene produkt

Info

Publication number
DE2234461A1
DE2234461A1 DE2234461A DE2234461A DE2234461A1 DE 2234461 A1 DE2234461 A1 DE 2234461A1 DE 2234461 A DE2234461 A DE 2234461A DE 2234461 A DE2234461 A DE 2234461A DE 2234461 A1 DE2234461 A1 DE 2234461A1
Authority
DE
Germany
Prior art keywords
recess
gold
metallization
gold powder
compound
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE2234461A
Other languages
German (de)
English (en)
Inventor
Joseph Paul Budd
Wayne Keith Robson
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
EIDP Inc
Original Assignee
EI Du Pont de Nemours and Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by EI Du Pont de Nemours and Co filed Critical EI Du Pont de Nemours and Co
Publication of DE2234461A1 publication Critical patent/DE2234461A1/de
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W76/00—Containers; Fillings or auxiliary members therefor; Seals
    • H10W76/10—Containers or parts thereof
    • H10W76/12—Containers or parts thereof characterised by their shape
    • H10W76/15—Containers comprising an insulating or insulated base
    • H10W76/157—Containers comprising an insulating or insulated base having interconnections parallel to the insulating or insulated base
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/62—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
    • H10W70/65—Shapes or dispositions of interconnections
    • H10W70/654—Top-view layouts
    • H10W70/655—Fan-out layouts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/68—Shapes or dispositions thereof
    • H10W70/682—Shapes or dispositions thereof comprising holes having chips therein
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/019—Manufacture or treatment of bond pads
    • H10W72/01961—Chemical or physical modification, e.g. by sintering or anodisation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07531—Techniques
    • H10W72/07532—Compression bonding, e.g. thermocompression bonding
    • H10W72/07533—Ultrasonic bonding, e.g. thermosonic bonding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/59—Bond pads specially adapted therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/884—Die-attach connectors and bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/754—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W99/00—Subject matter not provided for in other groups of this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/4913—Assembling to base an electrical component, e.g., capacitor, etc.

Landscapes

  • Die Bonding (AREA)
  • Chemically Coating (AREA)
DE2234461A 1971-11-15 1972-07-13 Metallisierungsmasse und verfahren zum metallisieren einer vertiefung in halbleiterpackungen sowie das dabei erhaltene produkt Pending DE2234461A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US19858471A 1971-11-15 1971-11-15

Publications (1)

Publication Number Publication Date
DE2234461A1 true DE2234461A1 (de) 1973-05-24

Family

ID=22733982

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2234461A Pending DE2234461A1 (de) 1971-11-15 1972-07-13 Metallisierungsmasse und verfahren zum metallisieren einer vertiefung in halbleiterpackungen sowie das dabei erhaltene produkt

Country Status (5)

Country Link
US (1) US3793064A (https=)
JP (1) JPS4859775A (https=)
DE (1) DE2234461A1 (https=)
FR (1) FR2160360B1 (https=)
IT (1) IT960176B (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3243689A1 (de) * 1981-11-30 1983-06-30 Mitsubishi Denki K.K., Tokyo Halbleitervorrichtung

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1490978A (en) * 1973-12-21 1977-11-09 Marconi Co Ltd Light emitting diode(led)arrays
US3903344A (en) * 1974-02-26 1975-09-02 Rca Corp Adherent solderable cermet conductor
US3914858A (en) * 1974-08-23 1975-10-28 Nitto Electric Ind Co Method of making sealed cavity molded semiconductor devices
US4025716A (en) * 1975-01-30 1977-05-24 Burroughs Corporation Dual in-line package with window frame
JPS5211154A (en) * 1975-07-17 1977-01-27 Shoei Chemical Ind Co Electrode material for wire welding
US4142203A (en) * 1976-12-20 1979-02-27 Avx Corporation Method of assembling a hermetically sealed semiconductor unit
JPS5762539A (en) * 1980-10-01 1982-04-15 Hitachi Ltd Mounting method for semiconductor element
US4399707A (en) * 1981-02-04 1983-08-23 Honeywell, Inc. Stress sensitive semiconductor unit and housing means therefor
JPS584957A (ja) * 1982-06-22 1983-01-12 Nec Kyushu Ltd 半導体装置
DE3382727D1 (de) * 1982-06-30 1994-01-27 Fujitsu Ltd Integrierte Halbleiterschaltungsanordnung.
EP0266210B1 (en) * 1986-10-29 1993-02-17 Kabushiki Kaisha Toshiba Electronic apparatus comprising a ceramic substrate
US4860443A (en) * 1987-01-21 1989-08-29 Hughes Aircraft Company Method for connecting leadless chip package
US4993148A (en) * 1987-05-19 1991-02-19 Mitsubishi Denki Kabushiki Kaisha Method of manufacturing a circuit board
US5036584A (en) * 1989-06-13 1991-08-06 Texas Instruments Incorporated Method of manufacture of copper cored enclosures for hybrid circuits
US5089439A (en) * 1990-02-02 1992-02-18 Hughes Aircraft Company Process for attaching large area silicon-backed chips to gold-coated surfaces
US5360942A (en) * 1993-11-16 1994-11-01 Olin Corporation Multi-chip electronic package module utilizing an adhesive sheet
JP3120703B2 (ja) * 1995-08-07 2000-12-25 株式会社村田製作所 導電性ペースト及び積層セラミック電子部品
US6020646A (en) * 1997-12-05 2000-02-01 The Charles Stark Draper Laboratory, Inc. Intergrated circuit die assembly
JP3776907B2 (ja) * 2003-11-21 2006-05-24 ローム株式会社 回路基板
TWI446495B (zh) * 2011-01-19 2014-07-21 旭德科技股份有限公司 封裝載板及其製作方法
US9560781B2 (en) * 2013-07-19 2017-01-31 Materion Corporation Metal cap assembly for optical communications

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3347799A (en) * 1964-07-16 1967-10-17 Du Pont Gold-palladium conductor compositions and conductors made therefrom
BE679454A (https=) * 1965-04-26 1966-09-16
DE1646882B1 (de) * 1965-07-29 1970-11-19 Du Pont Edelmetallmasse zum Aufbrennen auf keramische Traeger
US3385799A (en) * 1965-11-09 1968-05-28 Du Pont Metalizing compositions
US3520054A (en) * 1967-11-13 1970-07-14 Mitronics Inc Method of making multilevel metallized ceramic bodies for semiconductor packages
US3458930A (en) * 1967-12-07 1969-08-05 Zenith Radio Corp Leadless inverted device forming process
US3609105A (en) * 1970-06-08 1971-09-28 Alpha Metals Metalizing material

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3243689A1 (de) * 1981-11-30 1983-06-30 Mitsubishi Denki K.K., Tokyo Halbleitervorrichtung

Also Published As

Publication number Publication date
FR2160360A1 (https=) 1973-06-29
IT960176B (it) 1973-11-20
FR2160360B1 (https=) 1974-10-04
JPS4859775A (https=) 1973-08-22
US3793064A (en) 1974-02-19

Similar Documents

Publication Publication Date Title
DE2234461A1 (de) Metallisierungsmasse und verfahren zum metallisieren einer vertiefung in halbleiterpackungen sowie das dabei erhaltene produkt
DE68912932T2 (de) Glas-Keramik-Gegenstand und Verfahren zu dessen Herstellung.
DE3414065C2 (https=)
DE2558361C2 (de) Verfahren zum Herstellen von durchgehend metallisierten Bohrungen in mehrschichtigen keramischen Moduln
DE3587481T2 (de) Schaltungssubstrat mit hoher Wärmeleitfähigkeit.
US4172919A (en) Copper conductor compositions containing copper oxide and Bi2 O3
DE69204571T2 (de) Verfahren zur Herstellung von elektronischen Mehrschichtschaltungen.
DE10141910B4 (de) Glaskeramiksinterprodukt und Verfahren zu seiner Herstellung
DE69204340T2 (de) Verbesserte Glaskeramik-Kupfer-Verklebung.
DE10157443A1 (de) Glas-Keramikzusammensetzung für ein elektronisches Keramikbauteil, elektronisches Keramikbauteil und Verfahren zur Herstellung eines elektronischen Vielschicht-Keramikbauteils
DE3621667A1 (de) Mit einer mehrzahl von dickfilmen beschichtetes substrat, verfahren zu seiner herstellung und dieses enthaltende vorrichtung
DE10109531B4 (de) Keramik mit Hochfrequenzeigenschaften, Verfahren zu ihrer Herstellung und ihre Verwendung
US3838071A (en) High adhesion silver-based metallizations
DE3905276C1 (https=)
DE2234462B2 (de) Durch Siebdruck aufbringbare Metallisierungsmasse und deren Verwendung zum Einkapseln von Halbleiterkörpern
DE2308041B2 (de) Verwendung einer lotlegierung
DE2610303C2 (de) Siebdruckpaste für dicke, elektrisch leitende, Leiterbahnen bildende Schichten auf einem keramischen Substrat
US4394171A (en) Thick film conductor compositions
US3684536A (en) Bismuthate glass-ceramic precursor compositions
DE69106978T2 (de) Keramisches Substrat mit Silber enthaltender Verdrahtung.
US3944696A (en) High-adhesion conductors
JP3297531B2 (ja) 導電性ペースト
DE3688130T2 (de) Keramiksubstrat fuer zuleitungen und verfahren zu seiner herstellung.
DE3148809A1 (de) "keramische traegerplatte fuer feinlinige elektrische schaltungen und verfahren zu deren herstellung"
DE2550275C2 (de) Verfahren zum Herstellen von Barrieren für Lötzinn auf Leiterzügen