DE2232044A1 - Halbleiter-speichervorrichtung - Google Patents
Halbleiter-speichervorrichtungInfo
- Publication number
- DE2232044A1 DE2232044A1 DE19722232044 DE2232044A DE2232044A1 DE 2232044 A1 DE2232044 A1 DE 2232044A1 DE 19722232044 DE19722232044 DE 19722232044 DE 2232044 A DE2232044 A DE 2232044A DE 2232044 A1 DE2232044 A1 DE 2232044A1
- Authority
- DE
- Germany
- Prior art keywords
- gate
- storage device
- substrate
- channel
- misfet
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 27
- 238000003860 storage Methods 0.000 title claims description 20
- 239000000758 substrate Substances 0.000 claims description 33
- 230000000694 effects Effects 0.000 claims description 18
- 239000011159 matrix material Substances 0.000 claims description 15
- 239000012212 insulator Substances 0.000 claims description 13
- 230000005669 field effect Effects 0.000 claims description 10
- 239000010409 thin film Substances 0.000 claims description 5
- 238000009413 insulation Methods 0.000 claims description 3
- 238000002955 isolation Methods 0.000 claims description 2
- 230000001133 acceleration Effects 0.000 claims 1
- 230000001419 dependent effect Effects 0.000 claims 1
- 230000015654 memory Effects 0.000 description 33
- 238000000576 coating method Methods 0.000 description 12
- 239000011248 coating agent Substances 0.000 description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 9
- 229910052814 silicon oxide Inorganic materials 0.000 description 9
- 108091006146 Channels Proteins 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 239000000969 carrier Substances 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 229910000077 silane Inorganic materials 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 108090000699 N-Type Calcium Channels Proteins 0.000 description 2
- 102000004129 N-Type Calcium Channels Human genes 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 230000001360 synchronised effect Effects 0.000 description 2
- 238000012935 Averaging Methods 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- XKKCHOWAFDUWNN-UHFFFAOYSA-L N(=O)[O-].[Ge+2].N(=O)[O-] Chemical compound N(=O)[O-].[Ge+2].N(=O)[O-] XKKCHOWAFDUWNN-UHFFFAOYSA-L 0.000 description 1
- 108010075750 P-Type Calcium Channels Proteins 0.000 description 1
- -1 Silicon or germanium Chemical compound 0.000 description 1
- NHWNVPNZGGXQQV-UHFFFAOYSA-J [Si+4].[O-]N=O.[O-]N=O.[O-]N=O.[O-]N=O Chemical compound [Si+4].[O-]N=O.[O-]N=O.[O-]N=O.[O-]N=O NHWNVPNZGGXQQV-UHFFFAOYSA-J 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000006399 behavior Effects 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- XUFQPHANEAPEMJ-UHFFFAOYSA-N famotidine Chemical group NC(N)=NC1=NC(CSCCC(N)=NS(N)(=O)=O)=CS1 XUFQPHANEAPEMJ-UHFFFAOYSA-N 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000006386 memory function Effects 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Non-Volatile Memory (AREA)
- Read Only Memory (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4898771A JPS5760781B2 (ja) | 1971-07-03 | 1971-07-03 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE2232044A1 true DE2232044A1 (de) | 1973-01-18 |
Family
ID=12818571
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19722232044 Pending DE2232044A1 (de) | 1971-07-03 | 1972-06-30 | Halbleiter-speichervorrichtung |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPS5760781B2 (ja) |
| DE (1) | DE2232044A1 (ja) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2736715A1 (de) * | 1976-08-16 | 1978-02-23 | Ncr Co | Speichervorrichtung mit wahlfreiem zugriff |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS595752Y2 (ja) * | 1979-09-25 | 1984-02-21 | 日本エステル株式会社 | 延伸装置 |
| JP2008053270A (ja) * | 2006-08-22 | 2008-03-06 | Nec Electronics Corp | 半導体記憶装置、及びその製造方法 |
-
1971
- 1971-07-03 JP JP4898771A patent/JPS5760781B2/ja not_active Expired
-
1972
- 1972-06-30 DE DE19722232044 patent/DE2232044A1/de active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2736715A1 (de) * | 1976-08-16 | 1978-02-23 | Ncr Co | Speichervorrichtung mit wahlfreiem zugriff |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5760781B2 (ja) | 1982-12-21 |
| JPS4827687A (ja) | 1973-04-12 |
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