JPS5760781B2 - - Google Patents

Info

Publication number
JPS5760781B2
JPS5760781B2 JP4898771A JP4898771A JPS5760781B2 JP S5760781 B2 JPS5760781 B2 JP S5760781B2 JP 4898771 A JP4898771 A JP 4898771A JP 4898771 A JP4898771 A JP 4898771A JP S5760781 B2 JPS5760781 B2 JP S5760781B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP4898771A
Other versions
JPS4827687A (ja
Inventor
Shunpei Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TDK Corp
Original Assignee
TDK Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by TDK Corp filed Critical TDK Corp
Priority to JP4898771A priority Critical patent/JPS5760781B2/ja
Priority to DE19722232044 priority patent/DE2232044A1/de
Publication of JPS4827687A publication Critical patent/JPS4827687A/ja
Publication of JPS5760781B2 publication Critical patent/JPS5760781B2/ja
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Non-Volatile Memory (AREA)
  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
JP4898771A 1971-07-03 1971-07-03 Expired JPS5760781B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP4898771A JPS5760781B2 (ja) 1971-07-03 1971-07-03
DE19722232044 DE2232044A1 (de) 1971-07-03 1972-06-30 Halbleiter-speichervorrichtung

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4898771A JPS5760781B2 (ja) 1971-07-03 1971-07-03

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP1014176A Division JPS5496379A (en) 1976-02-02 1976-02-02 Semiconductor memory device

Publications (2)

Publication Number Publication Date
JPS4827687A JPS4827687A (ja) 1973-04-12
JPS5760781B2 true JPS5760781B2 (ja) 1982-12-21

Family

ID=12818571

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4898771A Expired JPS5760781B2 (ja) 1971-07-03 1971-07-03

Country Status (2)

Country Link
JP (1) JPS5760781B2 (ja)
DE (1) DE2232044A1 (ja)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2736715C2 (de) * 1976-08-16 1985-03-14 Ncr Corp., Dayton, Ohio Speichervorrichtung mit wahlfreiem Zugriff
JPS595752Y2 (ja) * 1979-09-25 1984-02-21 日本エステル株式会社 延伸装置
JP2008053270A (ja) * 2006-08-22 2008-03-06 Nec Electronics Corp 半導体記憶装置、及びその製造方法

Also Published As

Publication number Publication date
JPS4827687A (ja) 1973-04-12
DE2232044A1 (de) 1973-01-18

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