DE2227957A1 - Verfahren und vorrichtung zur herstellung elektrolumineszierender elemente - Google Patents
Verfahren und vorrichtung zur herstellung elektrolumineszierender elementeInfo
- Publication number
- DE2227957A1 DE2227957A1 DE2227957A DE2227957A DE2227957A1 DE 2227957 A1 DE2227957 A1 DE 2227957A1 DE 2227957 A DE2227957 A DE 2227957A DE 2227957 A DE2227957 A DE 2227957A DE 2227957 A1 DE2227957 A1 DE 2227957A1
- Authority
- DE
- Germany
- Prior art keywords
- ions
- activator
- vapor
- deposited
- electrode film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
- 238000000034 method Methods 0.000 title claims description 15
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 150000002500 ions Chemical class 0.000 claims description 34
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 25
- 239000012190 activator Substances 0.000 claims description 22
- 238000010438 heat treatment Methods 0.000 claims description 14
- 230000003081 coactivator Effects 0.000 claims description 12
- 238000007740 vapor deposition Methods 0.000 claims description 8
- 238000000605 extraction Methods 0.000 claims description 3
- 239000006200 vaporizer Substances 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 description 9
- 239000012535 impurity Substances 0.000 description 7
- 238000009792 diffusion process Methods 0.000 description 6
- 238000002347 injection Methods 0.000 description 6
- 239000007924 injection Substances 0.000 description 6
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 3
- 239000005751 Copper oxide Substances 0.000 description 3
- 229910000431 copper oxide Inorganic materials 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 230000008020 evaporation Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 230000001133 acceleration Effects 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 238000000752 ionisation method Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910001510 metal chloride Inorganic materials 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Electroluminescent Light Sources (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4131771A JPS5343787B1 (enExample) | 1971-06-09 | 1971-06-09 | |
| JP5123871 | 1971-07-10 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE2227957A1 true DE2227957A1 (de) | 1973-01-04 |
| DE2227957B2 DE2227957B2 (enExample) | 1974-10-17 |
Family
ID=26380904
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE2227957A Ceased DE2227957A1 (de) | 1971-06-09 | 1972-06-08 | Verfahren und vorrichtung zur herstellung elektrolumineszierender elemente |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US3847114A (enExample) |
| DE (1) | DE2227957A1 (enExample) |
| FR (1) | FR2140569B1 (enExample) |
| GB (1) | GB1339684A (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5372837A (en) * | 1990-05-30 | 1994-12-13 | Sharp Kabushiki Kaisha | Method of manufacturing thin film EL device utilizing a shutter |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3962988A (en) * | 1973-03-05 | 1976-06-15 | Yoichi Murayama, Nippon Electric Varian Ltd. | Ion-plating apparatus having an h.f. electrode for providing an h.f. glow discharge region |
| GB1483966A (en) * | 1974-10-23 | 1977-08-24 | Sharp Kk | Vapourized-metal cluster ion source and ionized-cluster beam deposition |
| US4217855A (en) * | 1974-10-23 | 1980-08-19 | Futaba Denshi Kogyo K.K. | Vaporized-metal cluster ion source and ionized-cluster beam deposition device |
| FR2420270A1 (fr) * | 1978-03-17 | 1979-10-12 | Abdalla Mohamed | Procede pour la realisation de couches minces electroluminescentes et appareillage pour la mise en oeuvre de ce procede |
| JPS5691437A (en) * | 1979-12-26 | 1981-07-24 | Nippon Hoso Kyokai <Nhk> | Preparation of metallized element |
| US4356429A (en) * | 1980-07-17 | 1982-10-26 | Eastman Kodak Company | Organic electroluminescent cell |
| US4526132A (en) * | 1982-11-24 | 1985-07-02 | Konishiroku Photo Industry Co., Ltd. | Evaporator |
| US4717606A (en) * | 1986-05-21 | 1988-01-05 | Rockwell International Corporation | Method of fabricating a thin film electroluminescent display panel |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3192892A (en) * | 1961-11-24 | 1965-07-06 | Sperry Rand Corp | Ion bombardment cleaning and coating apparatus |
| GB1039691A (en) * | 1964-03-17 | 1966-08-17 | Gen Precision Inc | Vacuum coating and ion bombardment apparatus |
| US3329601A (en) * | 1964-09-15 | 1967-07-04 | Donald M Mattox | Apparatus for coating a cathodically biased substrate from plasma of ionized coatingmaterial |
| CH436069A (fr) * | 1965-07-15 | 1967-05-15 | Reuge Sa | Fixation de ski de sécurité |
| US3434894A (en) * | 1965-10-06 | 1969-03-25 | Ion Physics Corp | Fabricating solid state devices by ion implantation |
| US3419487A (en) * | 1966-01-24 | 1968-12-31 | Dow Corning | Method of growing thin film semiconductors using an electron beam |
| US3695910A (en) * | 1969-01-21 | 1972-10-03 | Anthony W Louderback | Method of applying a multilayer antireflection coating to a substrate |
-
1972
- 1972-06-01 US US00258568A patent/US3847114A/en not_active Expired - Lifetime
- 1972-06-06 GB GB2628272A patent/GB1339684A/en not_active Expired
- 1972-06-08 FR FR7220652A patent/FR2140569B1/fr not_active Expired
- 1972-06-08 DE DE2227957A patent/DE2227957A1/de not_active Ceased
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5372837A (en) * | 1990-05-30 | 1994-12-13 | Sharp Kabushiki Kaisha | Method of manufacturing thin film EL device utilizing a shutter |
Also Published As
| Publication number | Publication date |
|---|---|
| FR2140569B1 (enExample) | 1977-12-23 |
| US3847114A (en) | 1974-11-12 |
| GB1339684A (en) | 1973-12-05 |
| FR2140569A1 (enExample) | 1973-01-19 |
| DE2227957B2 (enExample) | 1974-10-17 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| BHV | Refusal |