DE2221128A1 - Feldeffekttransistor - Google Patents

Feldeffekttransistor

Info

Publication number
DE2221128A1
DE2221128A1 DE19722221128 DE2221128A DE2221128A1 DE 2221128 A1 DE2221128 A1 DE 2221128A1 DE 19722221128 DE19722221128 DE 19722221128 DE 2221128 A DE2221128 A DE 2221128A DE 2221128 A1 DE2221128 A1 DE 2221128A1
Authority
DE
Germany
Prior art keywords
layer
gate
zone
insulating layer
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE19722221128
Other languages
German (de)
English (en)
Inventor
Teruaki Aoki
Shuichi Sato
Tadanori Yamaguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of DE2221128A1 publication Critical patent/DE2221128A1/de
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/681—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered
    • H10D64/685—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered being perpendicular to the channel plane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/691—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator comprising metallic compounds, e.g. metal oxides or metal silicates 

Landscapes

  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Element Separation (AREA)
  • Read Only Memory (AREA)
  • Static Random-Access Memory (AREA)
DE19722221128 1971-04-29 1972-04-28 Feldeffekttransistor Pending DE2221128A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP46028418A JPS511553B1 (enExample) 1971-04-29 1971-04-29

Publications (1)

Publication Number Publication Date
DE2221128A1 true DE2221128A1 (de) 1972-11-09

Family

ID=12248091

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19722221128 Pending DE2221128A1 (de) 1971-04-29 1972-04-28 Feldeffekttransistor

Country Status (7)

Country Link
JP (1) JPS511553B1 (enExample)
CA (1) CA961583A (enExample)
DE (1) DE2221128A1 (enExample)
FR (1) FR2135198B1 (enExample)
GB (1) GB1389298A (enExample)
IT (1) IT953877B (enExample)
NL (1) NL7205697A (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT8223557U1 (it) * 1982-11-26 1984-05-26 Faesite Spa Manufatti costituiti da fibre di legno incollate, riscaldate e pressate

Also Published As

Publication number Publication date
JPS511553B1 (enExample) 1976-01-19
FR2135198B1 (enExample) 1980-02-01
FR2135198A1 (enExample) 1972-12-15
GB1389298A (en) 1975-04-03
NL7205697A (enExample) 1972-10-31
IT953877B (it) 1973-08-10
CA961583A (en) 1975-01-21

Similar Documents

Publication Publication Date Title
DE69028507T2 (de) Nichtflüchtige Halbleiterspeicheranordnung mit einer isolierenden Schicht für Tunneleffekt
DE69228905T2 (de) Halbleiterspeichergerät
DE2600337C2 (de) Halbleiterspeicheranordnung
EP0160720B1 (de) Halbleiterspeicherzelle mit einem potentialmässig schwebenden Speichergate
DE3885408T2 (de) Nichtflüchtige Speicherzelle.
DE4016346C2 (de) Nichtflüchtige Halbleiterspeichervorrichtung und ein Verfahren zu ihrer Herstellung
DE68929225T2 (de) Nichtflüchtiger Halbleiterspeicher
DE3117719C2 (enExample)
DE2916884C3 (de) Programmierbare Halbleiterspeicherzelle
DE2409472C3 (de) Elektrisch löschbares Halbleiterspeicherelement mit einem Doppelgate-Isolierschicht-FET
DE69628056T2 (de) Halbleiterspeicheranordnung und Verfahren zur Steuerung
DE2743422A1 (de) Wortweise loeschbarer, nicht fluechtiger speicher in floating-gate-technik
DE2711895A1 (de) Feldeffekttransistor mit zwei gateelektroden und verfahren zu dessen herstellung
DE3334557A1 (de) Permanentspeicher
DE2838907A1 (de) Verfahren zum programmieren einer igfet-speicherzelle
DE3942171C2 (de) Nichtflüchtige Halbleiterspeichereinrichtung
DE2356275C2 (de) Halbleiterspeicherelement mit einem Doppelgate-Isolierschicht- FET
DE2810597A1 (de) Elektrische bauelementstruktur mit einer mehrschichtigen isolierschicht
EP0045469A2 (de) Nichtflüchtige, programmierbare integrierte Halbleiterspeicherzelle
DE19747776A1 (de) Halbleiterspeicher und Verfahren zu dessen Herstellung
DE2644832A1 (de) Feldeffekt-transistor und verfahren zu seiner herstellung
DE2845328A1 (de) Speichertransistor
DE2614698C2 (de) Halbleiterspeicher
EP0035160A1 (de) Halbleiter-Speicherzelle mit schwebendem Gate mit Schreib- und Lösch-Elektroden
WO1998006140A1 (de) Verfahren zum betrieb einer speicherzellenanordnung

Legal Events

Date Code Title Description
OHJ Non-payment of the annual fee